Datasheet irf730a_sihf730a Datasheet

N-Channel MOSFET

G

D

S

TO-220AB

G

D

S

Available

RoHS*

COMPLIANT

Power MOSFET

IRF730A, SiHF730A

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 400

(Ω)V

R

DS(on)

Q

(Max.) (nC) 22

g

Q

(nC) 5.8

gs

Q

(nC) 9.3

gd

Configuration Single

= 10 V 1.0

GS

FEATURES

• Low Gate Charge Qg results in Simple Drive Requirement

• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage and Current

• Effective Coss Specified

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Single Transistor Flyback Xfmr. Reset

• Single Transistor Forward Xfmr. Reset (Both US Line Input Only)

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRF730APbF SiHF730A-E3 IRF730A SiHF730A

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 3.5

C

DS

± 30

GS

I

D

IDM 22 Linear Derating Factor 0.6 W/°C Single Pulse Avalanche Energy Repetitive Avalanche Current Repetitive Avalanche Energy Maximum Power Dissipation T Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range T

b

a

= 25 °C P

c

C

E

AS

I

AR

E

AR

D

dV/dt 4.6 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting T c. I

SD

d. 1.6 mm from case.

= 25 °C, L = 19 mH, Rg = 25 Ω, IAS = 5.5 A (see fig. 12).

J

≤ 5.5 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91045 www.vishay.com S11-0508-Rev. B, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

400

5.5

290 mJ

5.5 A

7.4 mJ 74 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

www.vishay.com/doc?91000

V

AT

°C

IRF730A, SiHF730A

S

D

G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Case (Drain) R

Maximum Junction-to-Ambient R

thJC

thCS

thJA

-1.70

0.50 -

-62

°C/WCase-to-Sink, Flat, Greased Surface R

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

ΔV

DS/TJ

GS(th)

V

GSS

DSS

VGS = 10 V ID = 3.3 A

DS(on)

fs

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

iss

- 103 -

oss

-4.0-

rss

oss

eff. VDS = 0 V to 320 V

oss

g

--5.8

gs

--9.3

gd

d(on)

r

-20-

d(off)

-16-

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

on

MOSFET symbol showing the integral reverse p - n junction diode

TJ = 25 °C, IF = 3.5 A, dI/dt = 100 A/μs

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. c. C

eff. is a fixed capacitance that gives the same charging time as C

oss

VGS = 0 V, ID = 250 μA 400 - - V

Reference to 25 °C, I

= 1 mA

D

-0.5-

VDS = VGS, ID = 250 μA 2.0 - 4.5 V

= ± 30 V - - ± 100 nA

GS

VDS = 400 V, VGS = 0 V - - 25

V

= 320 V, VGS = 0 V, TJ = 125 °C - - 250

DS

b

--1.0Ω

VDS = 50 V, ID = 3.3 A 3.1 - - S

VGS = 0 V,

= 25 V,

V

DS

- 600 -

f = 1.0 MHz, see fig. 5

V

= 1.0 V, f = 1.0 MHz - 890 -

DS

V

GS

= 0 V

= 320 V, f = 1.0 MHz - 30 -

V

DS

c

-45-

--22

= 3.5 A, VDS = 320 V

I

V

GS

= 10 V

D

see fig. 6 and 13

b

-10-

V

= 200 V, ID = 3.5 A

DD

R

= 12 Ω, RD = 57 Ω,

g

see fig. 10

b

-22-

--5.5

--22

TJ = 25 °C, IS = 5.5 A, VGS = 0 V

b

--1.6V

- 370 550 ns

b

-1.62.4μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising from 0 % to 80 % VDS.

oss

V/°C

μA

pF

nC Gate-Source Charge Q

ns

A

www.vishay.com Document Number: 91045 2 S11-0508-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

91045_01

Bottom

To p

V

GS

15 V 10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width T

C

= 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

1

10

2

10

-2

1

0.1

10

2

10

2

1

10

-2

1

10

V

DS

,

Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

Bottom

To p

V

GS

15 V 10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width T

C

= 150 °C

91045_02

4.5 V

10

0.1

10

2

20 µs Pulse Width V

DS

= 50 V

10

2

10

0.1

I

D

, Drain-to-Source Current (A)

V

GS

,

Gate-to-Source Voltage (V)

5.0 6.0 7.0 8.0 9.0 10.0

4.0

91045_03

TJ = 25 °C

TJ = 150 °C

1

I

D

= 5.5 A

V

GS

= 10 V

0.0

0.5

1.0

1.5

2.0

2.5

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

91045_04

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

IRF730A, SiHF730A

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Vishay Siliconix

Fig. 3 - Typical Transfer Characteristics

Document Number: 91045 www.vishay.com S11-0508-Rev. B, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 2 - Typical Output Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRF730A, SiHF730A

1

10

3

C, Capacitance (pF)

V

DS

,

Drain-to-Source Voltage (V)

C

iss

C

rss

C

oss

V

GS

= 0 V, f = 1 MHz

C

iss

= Cgs + Cgd, Cds Shorted

C

rss

= C

gd

C

oss

= Cds + C

gd

91045_05

10

5

10

3

10

2

10

4

10

2

1

QG, Total Gate Charge (nC)

V

GS

, Gate-to-Source Voltage (V)

20

16

12

8

0

4

05 25

2015

10

V

DS

= 80 V

For test circuit see figure 13

V

DS

= 320 V

91045_06

ID = 5.5 A

V

DS

= 200 V

10 µs

100 µs

1 ms

10 ms

Operation in this area limited

by R

DS(on)

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

TC = 25 °C T

J

= 150 °C

Single Pulse

10

2

0.1

1

10

10 10

2

10

3

91045_08

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

2

10

1

, Reverse Drain Current (A)

SD

I

0.1

0.4

91045_07

Fig. 7 - Typical Source-Drain Diode Forward Voltage

TJ = 150 °C

TJ = 25 °C

V

GS

1.00.80.6

VSD, Source-to-Drain Voltage (V)

= 0 V

1.2

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

www.vishay.com Document Number: 91045 4 S11-0508-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

Fig. 8 - Maximum Safe Operating Area

www.vishay.com/doc?91000

I

D

, Drain Current (A)

TC, Case Temperature (°C)

1.0

2.0

3.0

4.0

5.0

6.0

25 1501251007550

91045_09

0.0

Pulse width ≤ 1 µs Duty factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

10 V

+

-

V

DS

V

DD

IRF730A, SiHF730A

Fig. 9 - Maximum Drain Current vs. Case Temperature

Vishay Siliconix

Fig. 10a - Switching Time Test Circuit

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig. 10b - Switching Time Waveforms

10

)

thJC

1

D = 0.5

0.2

0.1

0.05

0.1

0.02

Thermal Response (Z

91045_11

0.01

-2

10

-5

10

P

Single Pulse (Thermal Response)

-4

10

-3

10

-2

10

Notes:

1. Duty Factor, D = t

2. Peak Tj = PDM x Z

0.1 1

t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

DM

t

1

t

2

1/t2

+ T

thJC

C

Document Number: 91045 www.vishay.com S11-0508-Rev. B, 21-Mar-11 5

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRF730A, SiHF730A

A

R

G

I

AS

0.01 Ω

t

p

D.U.T.

L

V

DS

+

-

V

DD

Driver

15 V

20 V

I

AS

V

DS

t

p

700

0

200

300

400

500

600

25 150

125

10075

50

Starting TJ, Junction Temperature (°C)

E

AS

, Single Pulse Avalanche Energy (mJ)

Bottom

To p

I

D

2.5 A

3.5 A

5.5 A

91045_12c

100

Q

GS

Q

GD

Q

G

V

G

Charge

10 V

Vishay Siliconix

Fig. 12a - Unclamped Inductive Test Circuit

610

600

590

580

570

560

, Avalanche Voltage (V)

DSav

550

V

540

91045_12d

Fig. 12d - Typical Drain Source Voltage

2.0

1.00.0

3.0

IAV, Avalanche Current (A)

vs. Avalanche Current

4.0

5.0

6.0

www.vishay.com Document Number: 91045 6 S11-0508-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 12b - Unclamped Inductive Waveforms

This datasheet is subject to change without notice.

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

50 kΩ

0.2 µF

12 V

V

GS

0.3 µF

D.U.T.

3 mA

I

G

Current sampling resistors

I

D

+

V

-

Fig. 13b - Gate Charge Test Circuit

www.vishay.com/doc?91000

DS

P.W.

Period

dI/dt

Diode recovery

dV/dt

Ripple ≤ 5 %

Body diode forward drop

Re-applied voltage

Reverse recovery current

Body diode forward

current

V

GS

= 10 Va

I

SD

Driver gate drive

D.U.T. l

SD

waveform

D.U.T. V

DS

waveform

Inductor current

D =

P.W.

Period

+

-

+

-

Peak Diode Recovery dV/dt Test Circuit

V

DD

• dV/dt controlled by R

g

• Driver same type as D.U.T.

•

I

SD

controlled by duty factor “D”

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

R

g

Note

a. V

GS

= 5 V for logic level devices

V

DD

IRF730A, SiHF730A

Vishay Siliconix

Fig. 14 - For N-Channel

.

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91045

Document Number: 91045 www.vishay.com S11-0508-Rev. B, 21-Mar-11 7

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

TO-220AB

* M

3

2

1

L

L(1)

D

H(1)

Q

Ø P

A

F

J(1)

b(1)

e(1)

e

E

b

C

Package Information

Vishay Siliconix

MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX.

A 4.25 4.65 0.167 0.183

b 0.69 1.01 0.027 0.040

b(1) 1.20 1.73 0.047 0.068

c 0.36 0.61 0.014 0.024

D 14.85 15.49 0.585 0.610

E 10.04 10.51 0.395 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.09 6.48 0.240 0.255

J(1) 2.41 2.92 0.095 0.115

L 13.35 14.02 0.526 0.552

L(1) 3.32 3.82 0.131 0.150

Ø P 3.54 3.94 0.139 0.155

Q 2.60 3.00 0.102 0.118

ECN: X10-0416-Rev. M, 01-Nov-10 DWG: 5471

Note

* M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM

Document Number: 71195 www.vishay.com Revison: 01-Nov-10

1

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Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1