Page 1
PD - 9.1243B
2
PRELIMINARY
HEXFET® Power MOSFET
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design for
which HEXFET Power MOSFETs are well known, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for
vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
S1
G1
S2
G2
N-CHANNEL MOSFET
1
2
3
4
P-CHANNEL MOSFET
Top View
8
D1
7
D1
6
D
5
D2
IRF7309
N-Ch P-Ch
V
R
DS(on)
DSS
30V -30V
0.050Ω 0.10Ω
SO-8
Absolute Maximum Ratings
Parameter Max. Units
N-Channel P-Channel
ID @ TA = 25°C 10 Sec. Pulse Drain Current, VGS @ 10V 4.7 -3.5 A
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.0 -3.0 A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.2 -2.4 A
I
DM
PD @TA = 25°C Power Dissipation (PCB Mount)** 1.4 W
V
GS
dv/dt Peak Diode Recovery dv/dt 6.9 -6.0 V/ns
T
J, TSTG
Pulsed Drain Current 16 -12 A
Linear Derating Factor (PCB Mount)** 0.011 W/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJA
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Junction-to-Amb. (PCB Mount, steady state)** –––– –––– 90 °C/W
147
Page 2
IRF7309
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
/∆TJBreakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ± 20V
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductace N-P — 4.0 — Between lead tip
Internal Source Inductance N-P — 6.0 — and center of die contact
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
N-Ch 30 — — VGS = 0V, ID = 250µA
P-Ch -30 — — VGS = 0V, ID = -250µA
N-Ch — 0.032 — Reference to 25°C, ID = 1mA
P-Ch — -0.037 — Reference to 25°C, ID = -1mA
— — 0.050 VGS = 10V, ID = 2.4A
N-Ch
— — 0.080 VGS = 4.5V, ID = 2.0A
— — 0.10 VGS = -10V, ID = -1.8A
P-Ch
— — 0.16 VGS = -4.5V, ID = -1.5A
N-Ch 1.0 — — VDS = VGS, ID = 250µA
P-Ch -1.0 — — VDS = VGS, ID = -250µA
N-Ch 5.2 — — VDS = 15V, ID = 2.4A
P-Ch 2.5 — — VDS = -24V, ID = -1.8A
V
V/°C
Ω
V
S
N-Ch — — 1.0 VDS = 24V, VGS = 0V
P-Ch — — -1.0 VDS = -24V, VGS = 0V
N-Ch — — 25 VDS = 24V, VGS = 0V, TJ = 125°C
µA
P-Ch — — -25 VDS = -24V, VGS = 0V, TJ = 125°C
N-Ch — — 25
P-Ch — — 25
N-Ch — — 2.9
P-Ch — — 2.9
N-Ch — — 7.9
P-Ch — — 9.0
N-Ch — 6.8 —
P-Ch — 11 —
N-Ch — 21 —
P-Ch — 17 —
N-Ch — 22 —
P-Ch — 25 —
N-Ch — 7.7 —
P-Ch — 18 —
N-Channel
ID = 2.6A, VDS = 16V, VGS = 4.5V
nC
P-Channel
ID = -2.2A, VDS = -16V, VGS = -4.5V
N-Channel
VDD = 10V, ID = 2.6A, RG = 6.0Ω,
RD = 3.8Ω
ns
P-Channel
VDD = -10V, ID = -2.2A, RG = 6.0Ω,
RD = 4.5Ω
nH
N-Ch — 520 —
P-Ch — 440 —
N-Ch — 180 —
P-Ch — 200 —
N-Ch — 72 —
P-Ch — 93 —
N-Channel
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
pF
P-Channel
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time N-P
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 )
N-Channel I
P-Channel I
≤ 2.4A, di/dt ≤ 73A/µs, V
SD
≤ -1.8A, di/dt ≤ 90A/µs, V
SD
DD
DD
≤ V
≤ V
Pulse width ≤ 300µs; duty cycle ≤ 2%.
N-Ch — — 1.8
P-Ch — — -1.8
N-Ch — — 16
P-Ch — — -12
N-Ch — — 1.0 TJ = 25°C, IS = 1.8A, VGS = 0V
P-Ch — — -1.0 TJ = 25°C, IS = -1.8A, VGS = 0V
N-Ch — 47 71
P-Ch — 53 80
N-Ch — 56 84
P-Ch — 66 99
Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
, TJ ≤ 150°C
(BR)DSS
, TJ ≤ 150°C
(BR)DSS
148
A
V
N-Channel
ns
TJ = 25°C, IF = 2.6A, di/dt = 100A/µs
P-Channel
nC
TJ = 25°C, IF = -2.2A, di/dt = 100A/µs
Page 3
N-Channel
A
A
G
S
A
J
A
IRF7309
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 25°C
1
0.1 1 10 100
V , Drain -t o -S ou rce V olt a ge (V)
DS
J
Fig 1. Typical Output Characteristics,
TJ = 25oC
100
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTO M 4.5V
100
4.5V
10
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
1
0.1 1 10 100
V , Drain -t o -Source Voltage (V )
DS
J
Fig 2. Typical Output Characteristics,
TJ = 150oC
2.0
I = 4.0A
D
T = 2 5 °C
J
T = 1 5 0°C
J
1.5
1.0
(Normalized)
0.5
D
I , Drain-to-Source Current (A)
10
4 5 6 7 8 9 10
V = 15V
DS
20µs PULSE WI DTH
V , Gate-to-Source Voltage (V)
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Te mperature (°C)
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
149
V = 10V
GS
Page 4
IRF7309
D
S
A
A
S
DSDA
A
N-Channel
1000
800
600
400
V = 0V, f = 1MHz
GS
C = C + C , C SHORTED
iss gs gd ds
C = C
rss gd
C = C + C
oss ds gd
C
iss
C
oss
C, Capacitance (pF)
200
0
1 10 100
C
rss
V , Drain -t o -S ou rce V olt a ge (V)
Fig 5. Typical Capacitance Vs. Drain-to-
Source Voltage
100
20
I = 2.4A
D
V = 24V
DS
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
FOR TEST CIRCUIT
0
0 5 10 15 20 25
Q , Total Gate Cha rg e (n C)
G
SEE FIGURE 11
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T = 150°C
J
1
T = 25°C
J
I , Reverse Drain Current (A)
0.1
0.0 0.5 1.0 1.5 2.0 2.5
V = 0V
V , Sour c e- to -Drain Voltage (V )
GS
10
1
D
I , Drain Current (A)
T = 25°C
A
T = 150°C
J
Single Pulse
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
100µs
1ms
10ms
100ms
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
150
Page 5
4.0
A
A
A
3.0
2.0
D
1.0
I , Drain Current (Amps)
0.0
25 50 75 100 125 150
T , Ambient T emperature (°C)
A
Fig 9. Max. Drain Current Vs. Ambient Temp.
N-Channel
IRF7309
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11a. Gate Charge Test Circuit
Fig 11b. Basic Gate Charge Waveform
P-Channel
100
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
D
-I , Drain-to-Source Current (A)
1
0.1 1 10 100
-V , Drain-to-Source Voltage (V)
DS
-4.5V
20µs PULSE WIDTH
T = 25°C
J
100
VGS
TOP - 15V
- 10V
- 8. 0V
- 7. 0V
- 6. 0V
- 5. 5V
- 5. 0V
BOTTO M - 4.5V
10
D
-I , Drain-to-Source Current (A)
1
0.1 1 10 100
-V , Drain-to-S ource Voltage (V)
DS
-4.5V
20µs PULSE WIDTH
T = 150°C
J
Fig 12. Typical Output Characteristics, TJ = 25oC Fig 13. Typical Output Characteristics,TJ = 150oC
151
Page 6
IRF7309
ADS
A
J
A
A
P-Channel
100
T = 2 5 °C
J
T = 1 50°C
J
10
D
-I , Drain-to-Source Current (A)
1
4 5 6 7 8 9 10
-V , Gate-to-Source Voltage (V)
GS
V = -15V
DS
20µs PULSE WIDTH
Fig 14. Typical Transfer Characteristics
1000
800
V = 0V, f = 1MHz
GS
C = C + C , C SHORTED
iss gs gd ds
C = C
rss gd
C = C + C
oss ds gd
2.0
I = -3.0A
D
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Te mperature (°C)
Fig 15. Normalized On-Resistance
Vs. Temperature
20
I = -3.0A
D
V = -24V
DS
16
V = -10V
GS
600
400
C
C
iss
oss
12
8
C, Capacitance (pF)
200
0
1 10 100
C
rss
-V , Dra in- to -S ou rc e Voltage (V)
Fig 16. Typical Capacitance Vs. Drain-to-
Source Voltage
4
GS
-V , Gate-to-Source Voltage (V)
FOR TEST CIRCUIT
0
0 5 10 15 20 25
Q , T ot a l Gate Charge (nC)
G
SEE FIGURE 22
Fig 17. Typical Gate Charge Vs. Gate-to-
Source Voltage
152
Page 7
P-Channel
S
DSDA
A
D
S
A
A
IRF7309
100
10
T = 150°C
J
T = 25°C
J
1
-I , Reverse Drain Current (A)
V = 0V
0.1
0.0 0.3 0.6 0.9 1.2 1.5
GS
-V , Sou rc e- to -Drain Voltage ( V )
Fig 18. Typical Source-Drain Diode Forward
Voltage
3.0
100
OPERATION IN THIS AREA LIMIT ED
BY R
10
1
D
-I , Drain Current (A)
T = 25°C
A
T = 150°C
J
Single Pulse
0.1
0.1 1 10 100
DS(on)
-V , Dra in- to -Source Voltage ( V )
Fig 19. Maximum Safe Operating Area
100µs
1ms
10ms
100ms
2.0
1.0
D
-I , Drain Current (Amps)
0.0
25 50 75 100 125 150
T , AmbientTempe ra tu re (°C)
Fig 20. Max.Drain Current Vs. Ambient Temp.
153
Fig 21a. Switching Time Test Circuit
Fig 21b. Switching Time Waveforms
Page 8
IRF7309
P-Channel
Fig 22b. Gate Charge Test Circuit Fig 22b. Basic Gate Charge Waveform
N- and P-Channel
100
D = 0.50
thJA
Thermal Response (Z )
0.20
10
0.10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
DM
J
1 2
thJA
P
DM
A
t
1
t
2
Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Refer to the Appendix Section for the following:
Appendix A: Figure 24, Peak Diode Recovery dv/dt Test Circuit — See page 329.
Appendix B: Package Outline Mechanical Drawing — See page 332.
Appendix C: Part Marking Information — See page 332.
Appendix D: Tape and Reel Information — See page 336.
154
A
Loading...