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HEXFET® Power MOSFET
l
Generation V Technology
l Ultra Low On-Resistance
l Dual P-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
S1
G1
S2
G2
1
2
3
4
To p V iew
8
D1
7
D1
6
D2
5
D2
PD - 9.1240C
IRF7304
V
= -20V
DSS
R
DS(on)
= 0.090Ω
SO-8
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ -4.5V -4.7
@ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.3
I
D
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -3.4 A
I
DM
PD @TA = 25°C Power Dissipation 2.0
V
GS
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J, TSTG
Pulsed Drain Current -17
Linear Derating Factor 0.016
Gate-to-Source Voltage ±12 V
Junction and Storage Temperature Range -55 to + 150 °C
W/°C
Thermal Resistance Ratings
Parameter Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient ––– 62.5
°C/W
W
8/25/97
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IRF7304
Electrical Characteristics @ T
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.012 ––– V/ °C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
Gate Threshold Voltage -0.70 ––– ––– V VDS = VGS, ID = -250µA
Forward Transconductance 4.0 ––– ––– S VDS = -16V, ID = -2.2A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 V
Gate-to-Source Reverse Leakage ––– ––– 100 V
Total Gate Charge ––– ––– 22 ID = -2.2A
Gate-to-Source Charge ––– ––– 3.3 nC VDS = -16V
Gate-to-Drain ("Miller") Charge ––– –– – 9. 0 VGS = -4.5V, See Fig. 6 and 12
Turn-On Delay Time ––– 8.4 ––– VDD = -10V
Rise Time ––– 26 ––– ID = -2.2A
Turn-Off Delay Time ––– 51 ––– RG = 6.0Ω
Fall Time ––– 33 ––– RD = 4.5Ω, See Fig. 10
Internal Drain Inductance ––– 4.0 –––
Internal Source Inductance ––– 6.0 –––
Input Capacitance ––– 610 ––– VGS = 0V
Output Capacitance ––– 310 ––– pF VDS = -15V
Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5
= 25°C (unless otherwise specified)
J
––– ––– 0.090 V
––– ––– 0.140 V
––– ––– -1.0 VDS = -16V, VGS = 0V
––– ––– -25 V
ΩR
µA
nA
= -4.5V, ID = -2.2A
GS
= -2.7V, ID = -1.8A
GS
= -16V, VGS = 0V, TJ = 125°C
DS
= -12V
GS
= 12V
GS
ns
Between lead tip
nH
and center of die contact
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
TJ ≤ 150°C
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– -2.5
––– ––– -17
Diode Forward Voltage ––– ––– -1.0 V TJ = 25°C, IS = -1.8A, VGS = 0V
Reverse Recovery Time –– – 56 84 ns TJ = 25°C, IF = -2.2A
Reverse RecoveryCharge ––– 71 110 µC di/dt = 100A/µs
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
≤ -2.2A, di/dt ≤− 50A/µs, V
DD
≤ V
(BR)DSS
,
D
A
G
S
Page 3
IRF7304
100
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
10
1
D
-I , Drain-to-So urce C urrent (A)
-1.5V
20µs PULSE W IDTH
T = 25 °C
0.1
0.01 0.1 1 10 100
-V , Drain-to-Source Voltage (V)
DS
J
A
100
VGS
TOP - 7.5 V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
10
1
D
-I , D rain -to-S ou rce C u rren t (A)
-1.5V
20µs PULSE WIDTH
T = 150°C
0.1
0.01 0.1 1 10 100
-V , Drain-to-S ou rce Volta ge (V )
DS
J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
100
2.0
I = -3 .6A
D
A
T = 25°C
10
1
D
- I , Dr a in-to - Sou rc e Cu r ren t (A)
0.1
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
J
-V , Gate-to-So urce Voltage (V)
GS
T = 150°C
J
V = - 1 5 V
DS
20µs PULSE WIDTH
A
1.5
1.0
(N orm alized)
0.5
DS(on)
R , Dra in-to-S ou rc e O n R es istan ce
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Ju nc tion Tempe ra ture ( °C )
J
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
V = -4.5V
GS
A
Page 4
IRF7304
1500
1000
500
C, Capacitance (pF )
0
1 10 100
V = 0V, f = 1 MH z
GS
C = C + C , C SHORTED
iss gs gd d s
C = C
rss gd
C = C + C
oss ds gd
C
iss
C
oss
C
rss
-V , D rain- to-Sourc e Voltag e (V )
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
I = -2.2A
D
V = - 16V
DS
8
6
4
2
GS
-V , G ate -to-S ou rce V olta ge (V )
FOR TEST CIRCUIT
A
0
0 5 10 15 20 25
Q , Tota l Ga te Ch arg e (nC)
G
SEE FIG URE 12
A
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
1
SD
-I , Re verse D rain Cu rrent (A)
0.1
0.3 0.6 0.9 1.2 1.5
T = 150°C
J
T = 25°C
J
V = 0V
-V , So urc e- to-D rai n V o ltage (V)
SD
Fig 7. Typical Source-Drain Diode
Forward Voltage
GS
10
1ms
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
A
T T= 150 C
A
Single Pulse
1
1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
10ms
Fig 8. Maximum Safe Operating Area
Page 5
+
-
5.0
4.0
3.0
2.0
D
-I , Drain Current (A)
1.0
IRF7304
R
V
DS
V
GS
R
G
-4.5 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
D
D.U.T.
V
DD
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
Ambient Temperature
100
D = 0.50
thJA
Thermal Response (Z )
0.20
10
0.10
0.05
0.02
0.01
1
0.1
0.0001 0.001 0.01 0.1 1 10 100
SINGLE PULSE
(THERMAL RESPONSE)
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
Notes:
J DM thJA A
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Page 6
IRF7304
-4.5 V
Q
GS
V
G
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
Q
GD
12V
.2µF
V
GS
-3mA
.3µF
D.U.T.
V
DS
+
I
D
Charge
I
G
Current Sampling Resistors
Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit
Page 7
IRF7304
+
-
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
**
• dv/dt controlled by R
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS*
R
G
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
-
D =
G
Period
P.W.
+
VGS=10V
[ ] ***
*
V
DD
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
Current
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
di/dt
Diode Recovery
dv/dt
Fig 13. For P-Channel HEXFETS
V
DD
[ ]
I
[ ]
SD
Page 8
IRF7304
Package Outline
SO8 Outline
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.25 (.010) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
5
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6
B 8X
e1
A1
H
0.25 (.010) M A M
A
0.10 (.004)
K x 45°
θ
6
L
8X
C
8X
INCHES MILLIMETERS
DIM
MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
0° 8° 0° 8°
θ
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
Part Marking Information
SO8
EXAMPLE : THIS IS AN IRF7101
312
INTERNATIONAL
R E CT IF IER
L OGO
F7 101
TOP
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
W AF E R
PART NUMBER
LOT CO DE
(LAST 4 DIGITS)
XXXX
BOTTOM
Page 9
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
TERM INAL NU M BER 1
12.3 ( .484 )
11.7 ( .461 )
IRF7304
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTR OLL IN G DIM ENSION : M ILLIMETER.
2. ALL DIMENSI ONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
NOT ES :
1. CO NTR O LLING DIME NS ION : MILLIMETER.
2. OUTLIN E CONFORM S TO EIA-481 & EIA-541.
FEED DIRECTIO N
14.4 0 ( .566 )
12.4 0 ( .488 )
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 8/97
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