Datasheet IRF 730 Datasheet

N-Channel MOSFET

G

D

S

TO-220AB

G

D

S

Power MOSFET

IRF730, SiHF730

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 400

R

(Ω)V

DS(on)

Q

(Max.) (nC) 38

g

Q

(nC) 5.7

gs

Q

(nC) 22

gd

Configuration Single

= 10 V 1.0

GS

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRF730PbF
SiHF730-E3
IRF730
SiHF730

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 3.5

C

DS

± 20

GS

I

D

IDM 22

Linear Derating Factor 0.59 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

b

a

a

= 25 °C P

c

C

E

AS

I

AR

E

AR

D

dV/dt 4.0 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

= 50 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 Ω, IAS = 5.5 A (see fig. 12).

b. V

DD

≤ 5.5 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.

c. I

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91047 www.vishay.com
S11-0508-Rev. C, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

400

5.5

290 mJ

5.5 A

7.4 mJ

74 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

www.vishay.com/doc?91000

V

AT

°C

IRF730, SiHF730

D

S

G

S

D

G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-62

0.50 -

-1.7

°C/WCase-to-Sink, Flat, Greased Surface R

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.54 - V/°C

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

V

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

iss

- 170 -

oss

-64-

rss

g

--5.7

gs

--22

gd

d(on)

r

-38-

d(off)

-14-

f

D

Between lead,
6 mm (0.25") from
package and center of

Internal Source Inductance L

S

die contact

VGS = 0 V, ID = 250 μA 400 - -

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 400 V, VGS = 0 V - - 25

V

= 320 V, VGS = 0 V, TJ = 125 °C - - 250

DS

= 10 V ID = 3.3 A

GS

VDS = 50 V, ID = 3.3 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

--1.0Ω

2.9 - - S

- 700 -

--38

= 3.5 A, VDS = 320 V,

I

V

GS

= 10 V

D

see fig. 6 and 13

b

-10-

V

= 200 V, ID = 3.5 A

DD

R

= 12 Ω, RD = 57 Ω, see fig. 10

g

b

-15-

-4.5-

-7.5-

V

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the

integral reverse
p - n junction diode

TJ = 25 °C, IS = 5.5 A, VGS = 0 V

b

TJ = 25 °C, IF = 3.5 A, dI/dt = 100 A/μs

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

--5.5

--22

--1.6V

- 270 530 ns

b

-1.82.2μC

A

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

www.vishay.com Document Number: 91047
2 S11-0508-Rev. C, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

C

= 25 °C

4.5 V

91047_01

10

1

10

0

10

-1

10

0

10

1

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

10

-1

91047_02

4.5 V

20 µs Pulse Width
T

C

= 150 °C

10

1

10

0

10

-1

10

0

10

1

V

DS

,

Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

10

-1

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

91047_04

I

D

= 3.5 A

V

GS

= 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

IRF730, SiHF730

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

1

10

0

10

, Drain Current (A)

D

I

-1

10

91047_03

Fig. 3 - Typical Transfer Characteristics

Vishay Siliconix

150 °C

25 °C

20 µs Pulse Width

= 50 V

V

DS

4

5678 910

V

Gate-to-Source Voltage (V)

,

GS

Fig. 2 - Typical Output Characteristics, T

Document Number: 91047 www.vishay.com
S11-0508-Rev. C, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

= 150 °C

C

Fig. 4 - Normalized On-Resistance vs. Temperature

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRF730, SiHF730

91047_06

ID = 3.5 A

For test circuit
see figure 13

V

DD

= 80 V

V

DD

= 200 V

V

DD

= 320 V

QG, Total Gate Charge (nC)

V

GS

, Gate-to-Source Voltage (V)

20

16

12

8

0

4

010 50403020

91047_07

25 °C

150 °C

V

GS

= 0 V

10

1

10

0

VSD, Source-to-Drain Voltage (V)

I

SD

, Reverse Drain Current (A)

0.6 1.00.90.80.7 1.1 1.2

Vishay Siliconix

1500

1200

900

600

Capacitance (pF)

300

0

0

10

91047_05

V

Drain-to-Source Voltage (V)

,

DS

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

V

= 0 V, f = 1 MHz

GS

= Cgs + Cgd, Cds Shorted

C

iss

= C

C

rss

gd

C

= Cds + C

oss

gd

C

iss

C

oss

C

rss

1

10

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

2

10

5

2

Operation in this area limited

by R

10

5

2

1

, Drain Current (A)

D

I

5

TC = 25 °C

= 150 °C

T

J

Single Pulse

251025

1

91047_08

0.1

2

25

0.1

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

DS(on)

10

25

2

10 µs

100 µs

1 ms

10 ms

10

25

3

4

10

www.vishay.com Document Number: 91047
4 S11-0508-Rev. C, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

91047_09

I

D

, Drain Current (A)

TC, Case Temperature (°C)

0.0

2.0

3.0

4.0

5.0

6.0

25 1501251007550

1.0

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

IRF730, SiHF730

Fig. 9 - Maximum Drain Current vs. Case Temperature

V

DS

V

GS

R

G

Vishay Siliconix

R

D

D.U.T.

+

V

-

DD

10 V

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

10

)

thJC

1

0 − 0.5

0.2
P

DM

0.1

0.05

0.1

Thermal Response (Z

91047_11

0.02

0.01

-2

10

-5

10

Single Pulse
(Thermal Response)

Notes:

1. Duty Factor, D = t

2. Peak Tj = PDM x Z

-4

10

-3

10

-2

10

0.1 1 10

t1, Rectangular Pulse Duration (S)

t

1

t

2

1/t2

+ T

thJC

C

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91047 www.vishay.com
S11-0508-Rev. C, 21-Mar-11 5

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRF730, SiHF730

R

G

I

AS

0.01 Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

10 V

Vary t

p

to obtain

required I

AS

D.U.T.

3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

Vishay Siliconix

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

700

600

500

400

300

V

DS

t

V

I

AS

To p

Bottom

DS

I

D

2.5 A

3.5 A

5.5 A

p

V

DD

200

, Single Pulse Energy (mJ)

AS

100

E

91047_12c

VDD = 50 V

0

25 150

50

Starting T

, Junction Temperature (°C)

J

10075

125

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Q

10 V

V

Q

GS

G

G

Q

GD

Charge

www.vishay.com Document Number: 91047
6 S11-0508-Rev. C, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRF730, SiHF730

+

-

R

D.U.T.

g

Peak Diode Recovery dV/dt Test Circuit

+

-

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

-

• dV/dt controlled by R

• Driver same type as D.U.T.

I

controlled by duty factor “D”

•

SD

• D.U.T. - device under test

g

+

Vishay Siliconix

+

V

DD

-

Reverse
recovery
current

Re-applied
voltage

Driver gate drive

P.W.

D.U.T. l

D.U.T. V

Inductor current

Note

a. V

waveform

SD

waveform

DS

Body diode forward drop

Ripple ≤ 5 %

= 5 V for logic level devices

GS

Period

Body diode forward

current

dI/dt

Diode recovery

dV/dt

Fig. 14 - For N-Channel

D =

Period

P.W.

V

GS

V

DD

I

SD

= 10 Va

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91047

.

Document Number: 91047 www.vishay.com
S11-0508-Rev. C, 21-Mar-11 7

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

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Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1