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PD- 94087
IRF7241
HEXFET® Power MOSFET
● Trench Technology
● Ultra Low On-Resistance
● P-Channel MOSFET
● Available in Tape & Reel
Description
New trench HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in battery and load management applications.
V
DSS
R
DS(on)
max (m
Ω)Ω)
Ω) I
Ω)Ω)
-40V 41@VGS = -10V -6.2A
70@VGS = -4.5V -5.0A
S
S
S
1
2
3
4
Top View
A
8
D
7
D
6
D
5
DG
SO-8
D
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -6.2
ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -4.9 A
I
DM
PD @TA = 25°C Power Dissipation 2.5
PD @TA = 70°C Power Dissipation 1.6
V
GS
T
J, TSTG
Drain- Source Voltage -40 V
Pulsed Drain Current -25
W
Linear Derating Factor 20 mW/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJL
R
θJA
Junction-to-Drain Lead ––– 20
Junction-to-Ambient ––– 50 °C/W
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IRF7241
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -40 ––– – –– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– 25 41 VGS = -10V, ID = -6.2A
––– 45 70 VGS = -4.5V, ID = -5.0A
mΩ
Gate Threshold Voltage -1.0 ––– -3.0 V VDS = VGS, ID = -250µA
Forward Transconductance 8.9 ––– ––– S VDS = -10V, ID = -6.2A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– – –– 1 00 VGS = 20V
––– ––– -10 VDS = -32V, VGS = 0V
––– ––– -25 VDS = -32V, VGS = 0V, TJ = 70°C
µA
nA
Total Gate Charge ––– 53 80 ID = -6.2A
Gate-to-Source Charge ––– 14 21 nC VDS = -32V
Gate-to-Drain ("Miller") Charge ––– 3.9 5.9 VGS = -10V
Turn-On Delay Time ––– 24 ––– VDD = -20V
Rise Time ––– 280 ––– ID = -1.0A
Turn-Off Delay Time ––– 210 ––– RG = 6.0Ω
ns
Fall Time ––– 100 ––– VGS = -10V
Input Capacitance ––– 3220 ––– VGS = 0V
Output Capacitance ––– 160 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 190 ––– ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
–––
–––
–––
–––
-2.5
-25
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V
Reverse Recovery Time ––– 32 48 ns TJ = 25°C, IF = -2.5A
Reverse Recovery Charge ––– 45 68 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on 1 in square Cu board
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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D
S
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IRF7241
1000
100
10
1
0.1
D
-I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
100.00
VGS
TOP
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM
-2.7V
-2.70V
20µs PULSE WIDTH
T = 25 C
J
-V , Drain-to-Source Voltage (V)
DS
°
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM
-2.7V
-2.70V
20µs PULSE WIDTH
T = 150 C
J
-V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
-6.2A
I =
D
)
(Α
10.00
1.00
0.10
, Drain-to-Source Current
D
-I
0.01
TJ = 150°C
TJ = 25°C
V
= -25V
DS
20µs PULSE WIDTH
2.5 3.0 3.5 4.0 4.5 5.0
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
-10V
GS
°
Vs. Temperature
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IRF7241
5000
4000
Ciss
3000
2000
C, Capacitance(pF)
1000
Coss
Crss
0
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
+ Cgd, C
gs
gd
+ C
ds
gd
iss
C
rss
C
oss
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
SHORTED
ds
20
I =
-6.2A
D
V =-32V
DS
V =-20V
DS
GS
16
12
8
4
-V , Gate-to-Source Voltage (V)
0
0 20 40 60 80 100
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
1
SD
-I , Reverse Drain Current (A)
0.1
0.4 0.6 0.8 1.0 1.2
°
T = 150 C
J
°
T = 25 C
J
V = 0 V
GS
-V ,Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
10
1
, Drain-to-Source Current (A)
D
Tc = 25°C
-I
Tj = 150°C
Single Pulse
0.1
0 1 10 100 1000
-V
, Drain-toSource Voltage (V)
DS
100µsec
1msec
10msec
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRF7241
8.0
6.0
4.0
D
-I , Drain Current (A)
2.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
R
D.U.T.
D
-
+
V
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
DD
D = 0.50
thJA
Thermal Response (Z )
0.20
10
0.10
0.05
P
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJA A
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7241
)
0.10
Ω
0.08
0.06
0.04
ID = -6.2A
, Drain-to -Source On Resistance (
DS(on)
0.02
R
2 6 10 14 18
-V
Gate -to -Source Voltage (V)
GS,
Fig 12. Typical On-Resistance Vs.
Gate Voltage
)
0.08
Ω
0.06
V
= -4.5V
GS
0.04
, Drain-to-Source On Resistance (
V
GS
DS (on)
R
0.02
0 5 10 15 20 25
-ID , Drain Current (A)
Fig 13. Typical On-Resistance Vs.
Drain Current
= -10V
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
Q
GS
V
G
Q
GD
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
12V
.2µF
V
GS
.3µF
D.U.T .
-3mA
I
G
Current Sampling Resistors
V
DS
+
I
D
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IRF7241
3.0
2.5
ID = -250µA
2.0
Gate threshold Voltage (V)
GS(th)
-V
1.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
100
80
60
40
Power (W)
20
0
0.001 0.010 0.100 1.000 10.000 100.000
Time (sec)
Fig 16. Typical Power Vs. Time
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IRF7241
SO-8 Packag e Details
D B
8X b
5
65
4312
e1
A1
H
0.25 [.010]
A
A
C
0.10 [.004]
A
87
6
E
e
6X
0.25 [.010] C A B
NOT ES :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ].
4. OU TL INE CONFOR MS T O JEDE C OUT LINE MS -012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING T O
A SUBSTRATE.
y
3X 1.27 [.05 0]
DIM
MIN MAX
A
.0532
A1
b
c .0075 .0098 0.19 0.25
D
E
e
e1
H
K
L
y
K x 45°
8X L
7
6.46 [.255]
.0688
.0040
.0098
.013
.020
.189
.1968
.1497
.1574
.050 BASIC
.025 BASIC 0.635 BASIC
.2284
.2440
.0099
.0196
.016
.050
0°
8°
8X c
FOOTPRINT
8X 0.72 [.02 8]
MILLIMETERSINCHES
MIN MAX
1.35
1.75
0.10
0.25
0.33
0.51
4.80
5.00
3.80
4.00
1.27 BASIC
5.80
6.20
0.25
0.50
0.40
1.27
0°
8°
8X 1.78 [.07 0]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
YW W
XXXX
INTERNATIONAL
F7101
RECTIFIER
LOGO
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WW = WEEK
LOT CODE
PART NUMBER
Page 9
SO-8 Tape and Reel
TER MIN AL N U MBE R 1
12.3 ( .484 )
11.7 ( .461 )
IRF7241
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIM ETERS(INC HES).
3. OUT LINE CONFO R MS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
NOTES :
1. CONT ROLLING DIMENSION : M ILLIMETER.
2. OU TL INE CO N FO R M S TO EIA-481 & EIA-541.
FEED DIREC TION
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
14.40 ( .566 )
12.40 ( .488 )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.1/01
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