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l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
S
S
S
1
2
3
4
Top V iew
PD- 91850C
IRF7220
HEXFET® Power MOSFET
A
8
D
V
7
D
6
D
5
DG
R
DS(on)
SO-8
= -14V
DSS
= 0.012Ω
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V ±11
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V ±8.8 A
I
DM
PD @TA = 25°C Power Dissipation 2.5
PD @TA = 70°C Power Dissipation 1.6
E
AS
V
GS
T
J, TSTG
Drain- Source Voltage -14 V
Pulsed Drain Current ±88
W
Linear Derating Factor 0.02 W/°C
Single Pulse Avalanche Energy 110 mJ
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 50 °C/W
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IRF7220
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -14 ––– ––– V VGS = 0V, ID = -5mA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.006 –– – V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– .0082 0.012 VGS = -4.5V, ID = -11A
––– .0125 0.020 VGS = -2.5V, ID = -8.8A
Ω
Gate Threshold Voltage -0.60 ––– ––– V VDS = VGS, ID = -250µA
Forward Transconductance 8.4 ––– ––– S VDS = -10V, ID = -11A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
––– ––– -5.0 VDS = -11.2V, VGS = 0V
––– ––– -100 VDS = -11.2V, VGS = 0V, TJ = 70°C
µA
nA
Total Gate Charge ––– 84 1 2 5 ID = -11A
Gate-to-Source Charge ––– 13 20 nC VDS = -10V
Gate-to-Drain ("Miller") Charge ––– 37 55 VGS = -5.0V
Turn-On Delay Time ––– 19 ––– VDD = -10V
Rise Time ––– 420 ––– ID = -11A
Turn-Off Delay Time ––– 140 ––– RG = 6.2Ω
ns
Fall Time ––– 1040 ––– RD = 0.91Ω
Input Capacitance ––– 8075 –– – VGS = 0V
Output Capacitance –– – 4400 – –– pF VDS = -10V
Reverse Transfer Capacitance ––– 4150 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– –––
-2.5
––– ––– -88
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V
Reverse Recovery Time ––– 160 240 ns TJ = 25°C, IF = -2.5A
Reverse RecoveryCharge ––– 147 22 0 nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board, t<10 sec
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Starting T
RG = 25Ω, I
= 25°C, L = 1.8mH
J
= 11A. (See Figure 10)
AS
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D
S
Page 3
IRF7220
A
)
)
)
80
VG S
TOP - 4.5V
- 4 .0V
- 3 .0V
- 2 .0V
- 1 .8V
- 1 .6V
- 1 .4V
60
BOTTOM - 1.2V
300µs PULSE WIDTH
T = 25°C
J
40
20
D
-I , Drain-to -S ourc e C urre nt (A)
-1.2V
0
0246810
-V , Drain-to-Source Voltage (V
DS
1000
60
V G S
TO P - 4 .5 V
- 4 .0 V
- 3 .0 V
- 2 .0 V
50
- 1 .8 V
- 1 .6 V
- 1 .4 V
BOTTOM - 1.2V
40
30
20
D
10
-I , Drain-to-Source Current (A)
300µs PU LSE WIDT H
T = 150°C
J
-1.2V
0
0246810
-V , D r a in- to -S ourc e V oltage (V
DS
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
I =
D
-11A
A
1.5
100
T = 150°C
J
T = 25°C
10
D
-I , Drain-to-Source Current (A)
1
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
J
V = - 1 0 V
DS
20µs PULSE W IDTH
-V , Ga te -to-S o urc e V o ltage (V
GS
Fig 3. Typical Transfer Characteristics
A
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
-4.5V
Vs. Temperature
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IRF7220
)
g
g
g
,
A
)
10000
9000
8000
7000
6000
C, Capacitance (pF)
5000
4000
110
V = 0V, f = 1k Hz
GS
C = C + C
iss
C = C
C = C + C
C
iss
C
oss
C
rss
-V , Drain-to-Source Voltage (V
DS
s gd ds
rs s
d
os s ds
C SHO RTED
d
A
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
I =D-11A
V =-10V
GS
8
6
4
2
-V , Gate-to-Source Voltage (V)
0
0 20 40 60 80 100 120
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
DS
10
T = 150°C
J
T = 25°C
1
SD
-I , Rev erse D rain C u rrent (A)
0.1
0.0 0.5 1.0 1.5 2.0 2.5
-V , Source -t o-Drain Vo ltage (V
SD
J
V = 0V
Fig 7. Typical Source-Drain Diode
GS
100
100us
1ms
10
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
A
T T= 150 C
Single Pulse
1
0.1 1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRF7220
12
10
8
6
4
D
-I , Drain Current (A)
2
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
300
TOP
250
200
150
100
50
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
I
D
-4.9A
-8.8A
-11A
°
D = 0.50
thJA
0.20
10
0.10
0.05
P
1 2
DM
t
1
t
2
0.02
1
0.01
SINGLE PULSE
Thermal Response (Z )
0.1
0.0001 0.001 0.01 0.1 1 10 100
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7220
SO-8 Package Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.25 (.0 1 0) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. C O N TROLL IN G DIM E NSIO N : IN C H.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. O U T L INE C O N FO R M S T O J E D E C O U T LIN E M S - 0 12A A.
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
M O L D P R O TR U S IO N S NOT T O E X CE E D 0 .2 5 (.0 0 6).
DIM ENS IO N S IS T HE L E N G T H O F L EA D FOR SO L D ERIN G T O A SU B S T R A T E ..
6
B 8X
e1
A1
H
0 .2 5 (.0 1 0 ) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IN CH ES MILL IMETERS
DIM
M IN MA X MIN MAX
A .0 532 .0 688 1 .3 5 1 .7 5
A1 .0 040 .0 098 0 .10 0 .2 5
B .0 14 .0 18 0 .3 6 0 .4 6
C .0 075 .0 0 98 0 .1 9 0 .2 5
D .1 89 .1 9 6 4 .8 0 4 .9 8
E .1 50 .1 57 3 .8 1 3 .9 9
e .0 5 0 BA S IC 1 .2 7 BAS IC
e1 .0 2 5 BA S IC 0.63 5 B ASIC
H .2 284 .2 4 40 5 .80 6 .2 0
K .0 11 .0 19 0 .2 8 0 .4 8
L 0 .1 6 .0 50 0 .41 1 .2 7
θ
0 ° 8 ° 0 ° 8°
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .2 55 )
1.27 ( .050 )
3X
1.78 (.0 70)
8X
Part Marking
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Tape and Reel
SO-8
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
IRF7220
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : M ILLIM ETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIM ETERS(INCHES).
3. OUTLIN E CO N FORM S TO EIA-481 & EIA-541.
330. 00
(12.992)
MAX.
NOTES :
1. CONTRO LLING DIMEN SION : M ILLIMETER.
2. OU TL INE CO N FO R M S T O EIA-481 & EIA-541.
FEED DIRECTION
14.40 ( .566 )
12.40 ( .488 )
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 7/99
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