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l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques.
S
S
S
1
2
3
4
Top V iew
PD- 91844A
IRF7210
HEXFET® Power MOSFET
A
8
D
V
7
D
6
D
5
DG
R
DS(on)
SO-8
= -12V
DSS
= 0.007Ω
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V ±16
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V ±12 A
I
DM
PD @TA = 25°C Power Dissipation 2.5
PD @TA = 70°C Power Dissipation 1.6
V
GS
V
GSM
T
J, TSTG
Drain- Source Voltage -12 V
Pulsed Drain Current ±100
W
Linear Derating Factor 0.02 W/°C
Gate-to-Source Voltage ± 12 V
Gate-to-Source Voltage Single Pulse tp<10µs 16 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 50 °C/W
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IRF7210
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
V
(BR)DSS
∆V
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
(BR)DSS
Drain-to-Source Breakdown Voltage -14 ––– ––– V VGS = 0V, ID = -5.0mA
Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.011 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– .005 .007 VGS = -4.5V, ID = -16A
––– .007 .010 VGS = -2.5V, ID = -12A
Ω
Gate Threshold Voltage -0.6 ––– ––– V VDS = VGS, ID = -500µA
Forward Transconductance 16 ––– ––– S VDS = -10V, ID = -16A
––– ––– -10 VDS = -12V, VGS = 0V
Drain-to-Source Leakage Current
––– ––– -1.0 VDS = -9.6V, VGS = 0V
µA
––– ––– -100 VDS = -12V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
nA
Total Gate Charge ––– 212 318 ID = -10A
Gate-to-Source Charge ––– 27 41 nC VDS = -10V
Gate-to-Drain ("Miller") Charge ––– 52 78 VGS = -5.0V
Turn-On Delay Time ––– 50 ––– n s VDD = -10V
Rise Time ––– 3. 0 ––– ID = -10A
Turn-Off Delay Time ––– 6.5 ––– RD = 1.0Ω
µs
Fall Time ––– 30 ––– RG = 6.2Ω
Input Capacitance ––– 17179 –– – VGS = 0V
Output Capacitance ––– 9455 ––– pF VDS = -10V
Reverse Transfer Capacitance ––– 8986 ––– ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– –––
-2.5
––– ––– -100
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V
Reverse Recovery Time ––– 165 247 n s TJ = 25°C, IF = -2.5A
Reverse RecoveryCharge ––– 296 444 nC di/dt = 85A/µs
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board, t<10 sec
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
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D
S
Page 3
IRF7210
)
A
)
20
V G S
TO P -1.8V
- 1 .6V
- 1 .4V
- 1 .2V
- 1 .0V
16
BOTT O M -0.8V
12
8
4
D
-I , D rain-to-Source C urrent (A)
0
0246810
-V , Dra in-to -S ourc e V o ltage (V
DS
300µs PULSE WIDTH
T = 2 5 °C
J
-0.8V
Fig 1. Typical Output Characteristics
140
120
T = 25°C
J
100
-I , D rain-to-Source C urrent (A)
A
16
VGS
TOP -1.8V
-1.6V
-1.4V
-1.2V
-1.0V
BOTTO M -0.8 V
12
8
4
300µs PU L S E W IDTH
T = 150°C
J
D
-0.8V
0
0246810
-V , Dra in-to -S o u rce V o ltage (V
DS
Fig 2. Typical Output Characteristics
2.0
1.5
I =
D
-16A
80
1.0
60
T = 150°C
J
(Normalized)
40
D
20
-I , Drain-to-Source Current (A)
0
0.0 2.0 4.0 6.0 8.0
-V , Ga t e-to-S our ce Vo lt age (V)
GS
V = -1 0 V
DS
300µs PULSE W IDTH
Fig 3. Typical Transfer Characteristics
A
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
-4.5V
Vs. Temperature
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IRF7210
,
g
g
g
)
)
A
)
24000
20000
16000
V = 0V, f = 1 M H z
GS
C = C + C
iss
C = C
C = C + C
C
iss
s gd ds
rss
d
oss ds
C SHORTED
d
C, Capacitance (pF )
12000
C
oss
C
rss
8000
024681012
-V , D r a in- to- S o u rc e V o ltage (V
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
10
I = -10A
D
V = -1 2 V
8
6
4
2
GS
-V , Gate-to-S ource Voltage (V)
A
0
0 50 100 150 200 250 300
Q , To ta l Ga te Ch a rge (nC
G
DS
A
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 25°C
SD
J
T = 150°C
J
V = 0V
GS
100
10
D
-I , Drain Current (A)I , Drain Current (A)
, Drain-to-Source On Resistance ( Ω )
DS(on)
R
1
0.1 1 10 100
°
= 25 C
A
T T= 150 C
Single Pulse
°
J
-V , Drain-to-Source Voltage (V)
DS
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area.
100
10
SD
-I , Rev erse Drain Current (A)
1
0.0 2.0 4.0 6.0 8.0 10.0
-V , Sou rc e -t o-Dra in V o ltage (V
Fig 7. Typical Source-Drain Diode
Forward Voltage
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IRF7210
100
D = 0.50
thJA
Thermal Response (Z )
0.20
10
0.10
0.05
0.02
0.01
1
0.1
0.001 0.01 0.1 1 10 100
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
1 2
P
DM
t
1
t
2
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7210
SO-8 Pac kage Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.2 5 (.010 ) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERA NCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIO NS ARE SHOW N IN MILLIM ETERS ( INCH ES) .
4. OUTL IN E CONF O R M S TO J E DE C OU T L INE MS-012 AA.
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MO L D P ROT RUSION S N OT TO EX CEED 0.25 (.0 06).
DIMENSIONS IS THE LE NGT H O F LEAD FOR SOLD ER IN G TO A SUB S TRATE ..
6
B 8X
e1
A1
H
0.2 5 ( .0 1 0) M A M
A
0.10 (.004)
θ
θ
L
8X
K x 45°
6
C
8X
IN CHES M IL L IMETE RS
DIM
MIN MA X M IN M A X
A .0532 .0688 1 .35 1.75
A1 .0040 .0098 0.10 0 .25
B .014 .018 0 .36 0.46
C .007 5 .0 0 9 8 0.19 0 . 2 5
D .189 .196 4.80 4 . 9 8
E .150 .157 3 .81 3.99
e .0 5 0 BAS IC 1.27 BASIC
e1 .02 5 BAS IC 0.635 BASIC
H .228 4 .2 4 4 0 5.80 6 . 2 0
K .011 .019 0 .28 0.48
L 0.16 .050 0.41 1.27
θ
0 ° 8 ° 0° 8 °
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
Part Marking
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Page 7
Tape and Reel
SO-8
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
IRF7210
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : M ILLIMETER.
2. ALL DIM ENSIONS ARE SHOWN IN MILLIM ETERS(INCHES).
3. O U TLIN E C ON FORM S T O EIA-481 & EIA-541.
330. 00
(12.992)
MAX.
NOTES :
1. CO NTRO LLING DIMENSIO N : MILLIMETER.
2. OU TL INE CO N FO R M S T O EIA-481 & EIA-541.
FEED DIRECTION
14.40 ( .566 )
12.40 ( .488 )
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 7/99
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