Datasheet IRFS720B, IRF720B Datasheet (Fairchild Semiconductor)

IRF720B/IRFS720B

400V N-Channel MOSFET

IRF720B/IRFS720B

November 2001

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well

Features

• 3.3A, 400V, R

• Low gate charge ( typical 14 nC)

• Low Crss ( typical 11 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 1.75Ω @VGS = 10 V

DS(on)

suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.

D

G

SD

TO-220

IRF Series

GSD

TO-220F

IRFS Series

S

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter IRF720B IRFS720B Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

Drain-Source Voltage 400 V Drain Current

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

3.3 3.3 * A

2.1 2.1 * A

13.2 13.2 * A Gate-Source Voltage ± 30 V Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2) (Note 1) (Note 1) (Note 3)

240 mJ

3.3 A

4.9 mJ

5.5 V/ns

49 33 W

- Derate above 25°C 0.39 0.27 W/°C

T

, T

J

STG

T

L

* Drain current limited by maximum junction temperature

Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter IRF720B IRFS720B Units

R

θJC

R

θCS

R

θJA

Thermal Resistance, Junction-to-Case Max. 2.57 3.74 °C/W Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W

Rev. A, November 2001

IRF720B/IRFS720B

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 400 V, VGS = 0 V

DS

V

= 320 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

400 -- -- V

-- 0.4 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage Static Drain-Source

On-Resistance Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 1.65 A

V

GS

= 40 V, ID = 1.65 A

V

DS

(Note 4)

2.0 -- 4.0 V

-- 1.4 1.75 Ω

-- 2.8 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance Output Capacitance -- 55 72 pF Reverse Transfer Capacitance -- 11 15 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 460 600 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q

g gs gd

Turn-On Delay Time Turn-On Rise Time -- 35 80 ns Turn-Off Delay Time -- 35 80 ns Turn-Off Fall Time -- 35 80 ns Total Gate Charge Gate-Source Charge -- 2.7 -- nC Gate-Drain Charge -- 5.6 -- nC

= 200 V, ID = 3.3 A,

V

DD

= 25 Ω

R

G

V

= 320 V, ID = 3.3 A,

DS

V

GS

= 10 V

(Note 4, 5)

-- 10 3 0 ns

-- 14 1 8 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 39mH, IAS = 3.3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 3.3A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 3.3 A Maximum Pulsed Drain-Source Diode Forward Current -- -- 13.2 A

= 0 V, IS = 3.3 A

Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- 1.36 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 3.3 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.5 V

-- 220 -- ns

(Note 4)

Rev. A, November 2001

Typical Characteristics

IRF720B/IRFS720B

V

1

Top : 1 5 .0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V Botto m : 5.0 V

0

-1

10

GS

!

Note s :

1. 25 0$s Pulse Test

"

2. TC = 25

0

10

1

10

, Drain Current [A]

D

I

10

VDS, Drain-Source Voltage [V]

7

6

5

],

#

[

4

DS(ON)

R

3

Drain-Source On-Resistance

2

1

036912

VGS = 10V

VGS = 20V

!

Note : T

"

= 25

J

ID, Drain Current [A]

1

10

150oC

0

10

25oC

, Drain Current [A]

D

I

-1

10

246810

-55oC

!

Note s :

= 40V

1. V

DS

2. 25 0$s Pulse Test

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

0

10

"

150

"

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

25

!

Note s :

= 0V

1. V

GS

2. 250$s Pulse Te st

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

1000

800

600

400

Capacitance [pF]

200

0

-1

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

C

iss

C

oss

C

rss

0

10

1

!

Note s :

= 0 V

1. V

GS

2. f = 1 MHz

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

V

0

0 3 6 9 12 15

QG, Tota l G a te C h a rg e [n C ]

VDS = 80V

VDS = 200V

VDS = 320V

!

Note : I

Figure 5. Capacitance Characteristics Figure 6. Gate Charge C haracteristics

= 3.3 A

D

Typical Characteristics (Continued)

IRF720B/IRFS720B

1.2

1.1

1.0

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

!

1. V

2. I

Note s :

D

= 0 V

GS

= 250 $A

TJ, Junction Temperature [oC]

Figure 7. Breakdown Voltage Variation

vs Temperature

Operation in This Area is Limited by R

1

10

0

10

, Drain Current [A]

D

-1

I

10

-2

10

0

10

DS(on)

10 ms

DC

!

Note s :

1. T

= 25 oC

C

2. T

= 150 oC

J

3. Single Pulse

1

10

VDS, Drain-Source Voltage [V]

100 µs

1 ms

2

3.0

2.5

2.0

1.5

, (Normalized)

1.0

DS(ON)

R

Drain-Source On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200

!

Notes :

1. V

= 10 V

GS

= 1.65 A

2. I

D

TJ, Junction Temperature [oC]

Figure 8. On-Resistance Variation

vs Temperature

Operation in This Area is Limited by R

!

1. T

2. T

3. Single Pulse

1

10

Note s :

= 25 oC

C

= 150 oC

J

DS(on)

100 µs

1 ms

10 ms

100 ms

DC

2

10

3

10

1

10

0

3

10

, Drain Current [A]

-1

D

I

10

-2

10

0

10

VDS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe O per at in g Are a

3.5

3.0

2.5

2.0

1.5

, Dra in Cu rre n t [A ]

D

I

1.0

0.5

0.0 25 50 75 100 125 150

Figure 10. Maximum Drain Current

vs Case Temperature

for IRF720 B

TC, Case Temperature ["]

Figure 9-2. Maximum Safe Op er at in g Are a

for IRFS720B

Rev. A, November 2001

Typical Characteristics (Continued)

D=0.5

0

10

0.2

0.1

0.05

-1

10

(t), The rm al Res p o n s e

0.02

JC

%

0.01

Z

sin g le p u ls e

IRF720B/IRFS720B

!

Notes :

(t) = 2.57 "/W M a x.

1. Z

%

JC

2. D u ty Fa c to r, D = t

3. TJM - TC = PDM * Z

P

DM

1/t2

(t)

%

JC

t

1

t

2

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

t1, Square Wave Pulse Duration [sec]

Figure 11. Transient Thermal Response Curve for IRF7 20B

D=0.5

0

10

0.2

0.1

!

Notes :

(t) = 3.74 "/W M a x.

1. Z

%

JC

2. D u ty Fa c to r, D = t

3. TJM - TC = PDM * Z

1/t2

%

0.05

-1

10

0.02

0.01

(t), The rm al Res p o n s e

JC

%

Z

-2

10

-5

10

sin g le p u ls e

-4

10

-3

10

-2

10

P

DM

t

1

t

2

-1

10

0

10

t1, Square Wave Pulse Duration [sec]

Figure 11-2. Transient Thermal Response Curve for IRFS720B

1

10

(t)

JC

1

10

12V

200nF

3mA

50K&

V

Gate Charge Test Circuit & Waveform

V

GS

300nF

Same Type

as DUT

DUT

V

DS

GS

10V

Resistive Switching Test Circuit & Waveforms

IRF720B/IRFS720B

Q

g

Q

gs

Q

gd

Charge

10V

R

L

DUT

L

V

DD

V

DS

V

GS

R

G

V

DS

90%

10%

V

GS

t

d(on)tr

t

on

t

d(off)

t

f

t

off

Unclamped Inductive Switching Test Circuit & Waveforms

BV

DSS

L

LL

V

DS

BV

DSS

V

DSS

I

AS

DD

I

IDI

D

R

G

DUT

t

p

V

DD

1

----

E

=LI

E

=LI

AS

2

AS

ID (t)

t

2

p

DSS

--------------------

-------------------BV

BV

DSS-VDD

Time

V

(t)

V

(t)

DS

Peak Diode Recovery dv /d t Test Circuit & Waveforms

+

DUT

I

SD

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontroll ed by pulse period

G

IRF720B/IRFS720B

V

DD

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode

Forward Voltage Drop

di/dt

10V

V

DD

Package Dimensions

IRF720B/IRFS720B

TO-220

(1.70)

9.20 ±0.2013.08 ±0.20

1.30 ±0.10

(1.46)

(1.00)

1.27 ±0.10

9.90 ±0.20 (8.70)

ø3.60 ±0.10

(3.70)(3.00)

(45°)

1.52 ±0.10

2.80 ±0.1015.90 ±0.20

18.95MAX.

4.50 ±0.20

+0.10

1.30

–0.05

2.54TYP

±0.20]

[2.54

10.00 ±0.20

0.80 ±0.10

2.54TYP

±0.20]

[2.54

10.08 ±0.30

0.50

+0.10 –0.05

2.40 ±0.20

Dimensions in Millimeters

Package Dimensions

(Continued)

10.16 ±0.20

TO-220F

ø3.18 ±0.10

2.54

IRF720B/IRFS720B

±0.20

3.30 ±0.10

15.80 ±0.20

9.75 ±0.30

MAX1.47

0.80 ±0.10

(7.00)

(30°)

6.68 ±0.20

(1.00x45°)

(0.70)

0.20

15.87 ±

0.35 ±0.10

2.54TYP

[2.54

±0.20]

#1

9.40 ±0.20

2.54TYP

[2.54

±0.20]

4.70 ±0.20

0.50

+0.10 –0.05

2.76 ±0.20

Dimensions in Millimeters

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2

CMOS™

E EnSigna™ FACT™ FACT Quiet Series™

STAR*POWER is used under license

®

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OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench

®

QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER

SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™

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UltraFET

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2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H4