Datasheet irf7207 Datasheet

PD - 91879A

IRF7207

HEXFET® Power MOSFET

l Generation 5 Technology l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching

Description

S

1

2

3

4

Top V iew

A

8

D

V

7

D

6

D

5

DG

R

DSS

DS(on)

= -20V

= 0.06Ω

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically

SO-8

reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TC = 25°C Continuous Drain Current, VGS @ -4.5V -5.4 ID @ TC = 70°C Continuous Drain Current, VGS @ -4.5V -4.3 A I

DM

PD @TC = 25°C Power Dissipation 2.5 PD @TC = 70°C Power Dissipation 1.6

V

GS

V

GSM

E

AS

dv/dt Peak Diode Recovery dv/dt  -5.0 V/ns T

J, TSTG

Drain- Source Voltage -20 V

Pulsed Drain Current  -43

W

Linear Derating Factor 0.02 W/°C Gate-to-Source Voltage ± 12 V Gate-to-Source Voltage Single Pulse tp<10µs -16 V Single Pulse Avalanche Energy 140

Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance

Parameter Typ. Max. Units

R

θJA

Maximum Junction-to-Ambient ––– 50 °C/W

www.irf.com 1

6/5/00

IRF7207

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -20 ––– ––– VVGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– -0.011 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.06 V ––– ––– 0.10 VGS = -2.7V, ID = -2.7A 

Ω

= -4.5V, ID = -5.4A 

GS

Gate Threshold Voltage -0.7 ––– ––– VVDS = VGS, ID = -250µA Forward Transconductance 8.3 ––– ––– SVDS = -10V, ID = -5.4A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = 12V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = -12V

––– ––– -1.0 V ––– ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C

µA

nA

= -16V, VGS = 0V

DS

Total Gate Charge ––– 15 22 ID = -5.4A Gate-to-Source Charge ––– 2.2 3.3 nC VDS = -10V Gate-to-Drain ("Miller") Charge ––– 5.7 8.6 VGS = -4.5V,  Turn-On Delay Time ––– 11 ––– VDD = -10V Rise Time ––– 24 ––– ID = -1.0A Turn-Off Delay Time ––– 43 ––– RG = 6.0Ω

ns

Fall Time ––– 41 ––– RD = 10Ω,  Input Capacitance ––– 780 ––– VGS = 0V Output Capacitance ––– 410 ––– pF VDS = -15V Reverse Transfer Capacitance ––– 200 ––– ƒ = 1.0MHz,

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol (Body Diode) showing the Pulsed Source Current integral reverse (Body Diode)  p-n junction diode.

––– –––

-3.1

––– ––– -43

A

G

Diode Forward Voltage ––– ––– -1.0 V TJ = 25°C, IS = -3.1A, VGS = 0V  Reverse Recovery Time ––– 42 63 ns TJ = 25°C, IF = -3.1A Reverse RecoveryCharge ––– 50 75 nC di/dt = -100A/µs



Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Starting T

RG = 25Ω, I

= 25°C, L = 9.6mH

J

= -5.4A.

AS

 I

≤ -5.4A, di/dt ≤ -79A/µs, V

SD

DD

≤ V

TJ ≤ 150°C

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

(BR)DSS

,

 When mounted on 1 inch square copper board, t<10 sec

2 www.irf.com

D

S

IRF7207

100

10

D

-I , Drain-to-Source Current (A)

1

0.1 1 10

100

VGS

TOP

-7.00V

-5.00V

-4.50V

-3.50V

-3.00V

-2.70V



-2.50V

BOTTOM

-2.25V

20µs PULSE WIDTH



T = 25 C

J

-V , Drain-to-Source Voltage (V)

DS

-2.25V

°

100

10

D

-I , Drain-to-Source Current (A)

1

0.1 1 10

VGS

TOP

-7.00V

-5.00V

-4.50V

-3.50V

-3.00V

-2.70V



-2.50V

BOTTOM

-2.25V

20µs PULSE WIDTH



T = 150 C

J

-V , Drain-to-Source Voltage (V)

DS

-2.25V

°

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

-5.4A

I =



D

°

T = 25 C



J

°

T = 150 C



J

10

D

-I , Drain-to-Source Current (A)

V = -10V

DS



1

2.0 3.0 4.0 5.0 6.0

-V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

-4.5V

V =

-10V



GS

°

Vs. Temperature

www.irf.com 3

IRF7207

)

1600

1200

800

C, Capacitance (pF)

400

0

1 10 100

V

=

0V,

GS

C

=

issgsgd , ds

C

=

rssgd



C

=

oss dsgd

C



iss

C



oss

C



rss

-V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C C C

C SHORTED

+ C

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

10

I =

-5.4A

D



V =-10V

DS

8

6

4

2

GS

-V , Gate-to-Source Voltage (V)

0

0 5 10 15 20 25 30

Q , Total Gate Charge (nC)

G



FOR TEST CIRCUIT



SEE FIGURE

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED



BY R

DS(on

13

°

T = 150 C



J

10

°

T = 25 C



1

SD

-I , Reverse Drain Current (A)

0.1

0.4 0.6 0.7 0.9 1.1 1.2 1.4

-V ,Source-to-Drain Voltage (V)

SD

J

V = 0 V



GS

Fig 7. Typical Source-Drain Diode

10

D

-I , Drain Current (A)I , Drain Current (A)

°

= 25 C

A

T T= 150 C



Single Pulse

1

1 10 100

°

J

-V , Drain-to-Source Voltage (V)

DS

Fig 8. Maximum Safe Operating Area



100us



1ms



10ms

Forward Voltage

4 www.irf.com

IRF7207

6.0

5.0

4.0

3.0

2.0

D

-I , Drain Current (A)

1.0

0.0 25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

100

400

TOP



300

200

100

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting T , Junction Temperature ( C)

J

BOTTOM

Fig 10. Maximum Avalanche Energy

Vs. Drain Current

I

D

-2.4A

-4.3A

-5.4A

°

D = 0.50

thJA

Thermal Response (Z )

0.20

10

0.10

0.05 P

0.02

1

0.01

SINGLE PULSE



(THERMAL RESPONSE)

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100

t , Rectangular Pulse Duration (sec)

1

Notes:

1. Duty factor D = t / t



2. Peak T = P x Z + T

J DM thJA A

DM

t



1 2

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com 5

IRF7207

SO-8 Package Details

D

5

- B -

8 7 6 5

5

E

- A 1 2 3 4

e

6X

- C -

0.25 ( .0 1 0 ) M C A S B S

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.

2. C O NT R O L LIN G D IMEN S IO N : IN C H .

3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).

4. O U TLIN E C O N F OR M S TO JED EC O U T LIN E M S - 0 1 2 A A . DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS

5 M O L D P ROTR U S ION S N O T T O E XC EE D 0.2 5 (.00 6 ). DIM E NS IO N S IS T HE L EN G T H O F L E AD FO R S O L D E RIN G T O A S U B S TR A TE ..

6

B 8X

e1

A1

H

0 .2 5 (.0 1 0 ) M A M

A

0.10 (.004)

θ

L 8X

K x 45°

6

C 8X

IN CHE S MIL L IMET ERS

DIM

M IN M AX MIN MA X A .0 532 .0 68 8 1 .35 1 .7 5 A1 .0 040 .0 09 8 0 .10 0 .2 5 B .0 14 .0 18 0 .36 0 .4 6 C .0 07 5 .0 0 9 8 0 .1 9 0 .2 5 D .1 89 .1 9 6 4 .8 0 4 .9 8 E .1 50 .1 57 3 .81 3 .9 9 e .0 5 0 BA SIC 1 .2 7 BAS IC e1 .0 2 5 BA SIC 0.6 3 5 BA SIC H .2 28 4 .2 4 4 0 5 .80 6 .2 0 K .0 11 .0 19 0 .28 0 .4 8 L 0 .1 6 .0 50 0 .41 1 .2 7

θ

0 ° 8 ° 0 ° 8°

RECOMMENDED FOOTPRINT

0.72 (.028 ) 8X

6.46 ( .255 )

1.27 ( .050 ) 3X

1.78 (.070) 8X

Part Marking

6 www.irf.com

(

)

Tape and Reel

TERMINAL NUMBER 1

12.3 ( .484

11.7 ( .461

IRF7207

8.1 ( .318

7.9 ( .312

NOTES:

1. CONTROLLING DIM ENS ION : MILLIM ETER.

2. ALL DIM ENSIONS ARE SHOW N IN MILLIM ETERS(INCHES).

3. OUTLIN E C O NFORMS TO EIA-481 & EIA-541.

330. 00

12.992

MAX.

NOTES :

1. CONTRO LLING DIMEN SION : M ILLIM ETER.

2. OU TL INE CO N FO RM S T O EIA-481 & EIA-541.

FEED DIRECTION

14.40 ( .5 6 6

12.40 ( .4 8 8

IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111

IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936

Data and specifications subject to change without notice. 6/00

www.irf.com 7