Page 1
PD - 9.1104B
IRF7205
HEXFET® Power MOSFET
l Adavanced Process Technology
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
S
S
1
2
3
4
To p View
A
8
DS
V
= -30V
R
DS(on)
DSS
= 0.070Ω
7
D
6
D
5
DG
ID = -4.6A
SO-8
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -4.6
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V -3.7
I
DM
PD @TC = 25°C Power Dissipation 2.5
V
GS
dv/dt Peak Diode Recovery dv/dt -3.0 V/nS
T
J, TSTG
Pulsed Drain Current -15
W
Linear Derating Factor 0.020 W/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 150
°C
Thermal Resistance Ratings
Parameter Min. Typ. Max. Units
R
Maximum Junction-to-Ambient –––
θJA
–––
50 °C/W
A
8/25/97
Page 2
IRF7205
Electrical Characteristics @ T
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
(BR)DSS
Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.024 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
Gate Threshold Voltage -1.0 ––– -3.0 V VDS = VGS, ID = -250µA
Forward Transconductance ––– 6.6 ––– S VDS = -15V, ID = -4.6A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 V
Gate-to-Source Reverse Leakage ––– ––– 100 V
Total Gate Charge ––– 27 40 ID = -4.6A
Gate-to-Source Charge ––– 5.2 ––– nC VDS = -15V
Gate-to-Drain ("Miller") Charge ––– 7.5 ––– VGS = -10V
Turn-On Delay Time ––– 14 30 VDD = -15V
Rise Time ––– 21 60 ID = -1.0A
Turn-Off Delay Time ––– 97 150 RG = 6.0Ω
Fall Time ––– 71 100 RD = 10Ω
Internal Drain Inductance ––– 2.5 –––
Internal Source Inductance ––– 4.0 –––
Input Capacitance ––– 870 ––– VGS = 0V
Output Capacitance ––– 720 –– – pF VDS = -10V
Reverse Transfer Capacitance ––– 220 ––– ƒ = 1.0MHz
= 25°C (unless otherwise specified)
J
––– ––– 0.070 V
––– ––– 0.130 V
––– ––– -1.0 VDS = -24V, VGS = 0V
––– ––– -5.0 V
ΩR
µA
nA
= -10V, ID = -4.6A
GS
= -4.5V, ID = -2.0A
GS
= -15V, VGS = 0V, TJ = 70 °C
DS
= -20V
GS
= 20V
GS
ns
Between lead,6mm(0.25in.)
nH
from package and center
of die contact
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
I
SD
TJ ≤ 150°C
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– -2.5
––– ––– -15
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.25A, VGS = 0V
Reverse Recovery Time ––– 70 100 n s TJ = 25°C, IF = -4.6A
Reverse RecoveryCharge ––– 100 180 nC di/dt = 100A/µs
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
≤ -4.6A, di/dt ≤ 90A/µs, V
DD
≤ V
(BR)DSS
,
Surface mounted on FR-4 board, t ≤ 10sec.
D
A
G
S
Page 3
IRF7205
Page 4
IRF7205
C,
12
Page 5
IRF7205
+
-
R
V
DS
V
GS
R
G
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
D
D.U.T.
V
DD
t
d(off)tf
V
GS
10%
90%
V
DS
t
d(on)tr
Fig 10b. Switching Time Waveforms
100
D = 0.50
thJA
Thermal Response (Z )
0.20
10
0.10
0.05
P
1 2
DM
t
1
t
2
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001 0.001 0.01 0.1 1 10 100
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJA A
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Page 6
IRF7205
Current Regulator
Same Type as D.U.T.
Q
G
-10V
Q
GS
V
G
Q
GD
Charge
Fig 12a. Basic Gate Charge Waveform
50KΩ
.2µF
12V
V
GS
.3µF
D.U.T .
-3mA
I
G
Current Sampling Resistors
I
+
D
Fig 12b. Gate Charge Test Circuit
V
DS
Page 7
IRF7205
+
-
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
R
G
V
GS
• dv/dt controlled by R
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
V
DD
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D =
P.W.
Period
VGS=10V
[ ] ***
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
Current
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
Diode Recovery
di/dt
dv/dt
Fig 13. For P-Channel HEXFETS
V
DD
[ ]
I
[ ]
SD
Page 8
IRF7205
Package Outline
SO8 Outline
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.25 (.010) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
5
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6
B 8X
e1
A1
H
0.25 (.010) M A M
A
0.10 (.004)
K x 45°
θ
6
L
8X
C
8X
INCHES MILLIMETERS
DIM
MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
0° 8° 0° 8°
θ
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
Part Marking Information
SO8
EXAMPLE : THIS IS AN IRF7101
312
INTERNATIONAL
R E CTIFIER
L OG O
F7 101
TOP
DATE CODE (YW W)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
W AF E R
PART NUMBER
LOT CO DE
(LAST 4 DIGITS)
XXXX
BOTTOM
Page 9
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .48 4 )
11.7 ( .46 1 )
IRF7205
8.1 ( .3 18 )
7.9 ( .3 12 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIO NS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EI A-481 & EIA-541.
330. 00
(12.99 2)
M A X .
NOT ES :
1. CO NTRO LLING DIME NS ION : MILLIM E TER .
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED D IRECTION
14.40 ( .566 )
12.40 ( .488 )
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 8/97
Loading...