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PD - 91100C
A
PRELIMINARY
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
S
S
S
1
2
3
4
Top View
IRF7201
HEXFET® Power MOSFET
A
8
D
V
= 30V
R
DS(on)
DSS
= 0.030W
7
6
5
D
D
DG
SO-8
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 7.3
ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 5.8 A
I
DM
PD @TC = 25°C Power Dissipation 2.5
PD @TC = 70°C Power Dissipation 1.6
V
GS
V
GSM
E
AS
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J, TSTG
Drain- Source Voltage 30 V
Pulsed Drain Current 58
Linear Derating Factor 0.02 W/°C
Gate-to-Source Voltage ± 20 V
Gate-to-Source Voltage Single Pulse tp<10µs 30 V
Single Pulse Avalanche Energy 70 mJ
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Typ. Max. Units
R
qJA
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Maximum Junction-to-Ambient ––– 50 °C/W
W
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IRF7201
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
DV
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
/DT
Breakdown Voltage Temp. Coefficient ––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.030 VGS = 10V, ID = 7.3A
––– ––– 0.050 VGS = 4.5V, ID = 3.7A
W
Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 5.8 ––– ––– S VDS = 15V, ID = 2.3A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
––– ––– 1.0 VDS = 24V, VGS = 0V
––– ––– 25 VDS = 24V, VGS = 0V, TJ = 125°C
µA
nA
Total Gate Charge ––– 19 28 ID = 4.6A
Gate-to-Source Charge ––– 2.3 3.5 nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– 6.3 9.5 VGS = 10V, See Fig. 10
Turn-On Delay Time ––– 7.0 ––– VDD = 15V
Rise Time ––– 35 ––– ID = 4.6A
Turn-Off Delay Time ––– 21 ––– RG = 6.2W
ns
Fall Time ––– 19 ––– RD = 3.2W,
Input Capacitance ––– 550 ––– VGS = 0V
Output Capacitance ––– 260 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 100 ––– ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25W, I
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Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– –––
––– ––– 58
2.5
A
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 4.6A, VGS = 0V
Reverse Recovery Time ––– 48 73 ns TJ = 25°C, IF = 4.6A
Reverse RecoveryCharge ––– 73 110 nC di/dt = 100A/µs
I
£ 4.6A, di/dt £ 120A/µs, V
SD
DD
£ V
(BR)DSS
,
TJ £ 150°C
= 15V, starting TJ = 25°C, L = 6.6mH
= 4.6A. (See Figure 8)
AS
Pulse width £ 300µs; duty cycle £ 2%.
When mounted on 1 inch square copper board, t<10 sec
G
D
S
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IRF7201
A
)
A
)
)
A
)
A
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
D
I , Dra in -to -S o u rc e C u rre n t (A )
1
0.1 1 10
V , Drain -to -Sou rc e V o ltage (V
DS
3.0V
20µs PULS E WIDTH
T = 25°C
J
Fig 1. Typical Output Characteristics
100
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
D
I , Dra in -to -S o u rc e C u rre n t (A )
20µs PULS E WIDTH
T = 150°C
1
0.1 1 1 0
V , Drain -to -S o u rce V o ltage (V
DS
J
Fig 2. Typical Output Characteristics
100
T = 25°C
J
T = 150°C
J
10
D
I , Drain-to-Source Current (A)
1
3.0 3.5 4.0 4.5 5.0 5.5
V , Gate - to -Sou rc e Vo ltage (V
GS
V = 10V
DS
20µs PULSE W IDTH
Fig 3. Typical Transfer Characteristics
10
T = 150°C
J
T = 25°C
J
1
SD
I , Reverse Drain Current (A)
0.1
0.4 0.6 0.8 1.0 1.2
V , So urce-to-Drain Voltage (V
SD
Fig 4. Typical Source-Drain Diode
Forward Voltage
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V = 0V
GS
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IRF7201
A
A
)
A
)
2.0
I = 4 . 6 A
D
1.5
1.0
(N o rmaliz ed )
0.5
DS(on)
R , D ra in -to -S o u rc e On Res is tan c e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Tem pe rature (°C)
J
Fig 5. Normalized On-Resistance
Vs. Temperature
0.05
(Ω)
V = 10 V
GS
0.20
(Ω)
0.15
0.10
V = 4 .5V
0.05
DS(on)
R , D ra in -to-Sou rc e On Res is tan c e
0.00
0 10203040
GS
V = 10 V
I , Drain Current (A
D
GS
Fig 6. On-Resistance Vs. Drain Current
200
160
I
D
TOP 2.1A
3.7A
BOTTOM 4.6A
0.04
0.03
0.02
DS(on)
R , D r ain -to- S o urc e On R e s is tan c e
Fig 7. On-Resistance Vs. Gate Voltage
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I = 7 .3 A
D
2 4 6 8 10 12 14 16
V , Gate - to -Sou rc e Voltage (V
GS
120
80
40
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature (°C)
J
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
A
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IRF7201
A
g
g
g
A
)
1000
800
600
400
V = 0V, f = 1MH z
GS
C = C + C , C S HORTE D
iss
C = C
C = C + C
s gd ds
rss
d
oss d s
C
iss
C
oss
d
C, Capacitance (pF)
200
0
1 10 100
V , D rain-to-Source V oltage (V)
DS
C
rss
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I = 4.6A
D
16
12
8
4
GS
V , Gate -to -S o u rc e Volta g e (V)
0
0 5 10 15 20 25 30
Q , T o ta l Gate Charge (nC)
G
V = 24 V
DS
V = 15 V
DS
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
D = 0.50
thJA
0.20
10
0.10
0.05
P
0.02
1
0.01
DM
Thermal Response (Z )
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t , Rectangular Pulse Duration (sec
1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
J DM thJA A
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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t
1
t
2
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IRF7201
SO-8 Package Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.2 5 (.010 ) M C A S B S
NOTES:
1. DIMENSIONING AND TO LE RA NC ING PE R A N SI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOW N IN MILLIMETERS (INCHES).
4. O UTLINE C ONFORMS TO JEDEC OUT L IN E MS-01 2 AA.
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PR O TRU SIONS N O T TO E XCEE D 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6
B 8X
e1
A1
H
0.25 (.010) M A M
A
0.10 (.004)
q
θ
L
8X
K x 45°
6
C
8X
IN CHE S M IL L IMETER S
DIM
M IN M AX MIN MAX
A .0 5 3 2 .06 8 8 1 .3 5 1.75
A1 .0 0 4 0 .00 9 8 0 .1 0 0.25
B .0 1 4 . 0 1 8 0 .36 0 .4 6
C .0075 .0 0 9 8 0.1 9 0 .2 5
D .189 .1 9 6 4.80 4 .9 8
E .1 5 0 . 1 5 7 3 .81 3 .9 9
e .0 5 0 BA S IC 1.2 7 BA S IC
e1 .025 BASIC 0.635 BASIC
H .2284 .2 4 4 0 5.8 0 6 .2 0
K .0 1 1 . 0 1 9 0 .28 0 .4 8
L 0.16 .0 50 0 .4 1 1 .2 7
θ
0 ° 8 ° 0 ° 8 °
RECOMME NDED F OOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
Part Marking
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Page 7
Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
IRF7201
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
NOTES :
1. CONTRO LLING DIMENSION : MILLIMETER.
2. OUTLINE CO N FORMS TO EIA-481 & EIA-541.
FEED DIRECTION
14.40 ( .566 )
12.40 ( .488 )
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 9/98
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