Datasheet IRF710 Datasheet (Intersil)

IRF710

Data Sheet June 1999

2.0A, 400V, 3.600 Ohm, N-Channel Power
MOSFET

This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy inthe breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
They can be operated directly from integrated circuits.

Formerly developmental type TA17444.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF710 TO-220AB IRF710

NOTE: When ordering, include the entire part number.

File Number

Features

• 2.0A, 400V

•r

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 3.600Ω

Components to PC Boards”

Symbol

D

G

2310.3

Packaging

DRAIN

(FLANGE)

JEDEC TO-220AB

TOP VIEW

SOURCE

S

DRAIN

GATE

4-220

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF710

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF710 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

D
D

DM

GS

D

400 V
400 V

2A

1.2 A
5A

±20 V

36 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.29 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

120 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V

GS(TH)VGS

Zero-Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)

Gate to Source Leakage Forward I
Drain to Source On Resistance (Note 2) r

DS(ON)VGS

Forward Transconductance (Note 2) g
Turn-On Delay Time t

D(ON)

Rise Time t
Turn-Off Delay Time t

D(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSVGS

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= 0V, ID = -250µA (Figure 10) 400 - - V

= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV
VDS> I

D(ON) xrDS(ON)MAX,VGS

, VGS = 0V - - 250 µA

DSS

, VGS = 0V, TJ = 125oC - - 1000 µA

DSS

= 10V 2.0 - - A

VGS = ±20V - - ±500 nA

= 10V, ID = 1.1A (Figures 8, 9) - 3.3 3.6 Ω
VDS≥ 10V,ID = 1.2A (Figure 12) 1.0 1.5 - S
VDD= 50V, ID≈ 5.6A, RG = 24Ω, RL = 8.9Ω,

VGS = 10V
MOSFET Switching Times are Essentially
Independent of Operating Temperature

- 8.0 12 ns

-1015ns

-2132ns

-1117ns

= 10V, ID = 2.0A, VDS = 0.8 x Rated BV
I

= 1.5mA (Figure 14)

g(REF)

DSS

Gate charge is Essentially Independent of Operating
Temperature

- 7.0 12 nC

- 1.2 - nC

- 4.0 - nC

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 135 - pF

-35-pF

- 8.0 - pF

Measured From the
Contact Screw on Tab to
Center of Die

MeasuredFrom the Drain
Lead, 6mm (0.25in) From
Package to Center of Die

Measured From the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad

Modified MOSFET
Symbol Showing the
Internal Device’s
Inductances

D

L

D

G

L

S

S

- 3.5 - nH

- 4.5 - nH

- 7.5 - nH

- - 3.5oC/W

Free Air Operation - - 62.5oC/W

4-221

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

(Note 3)

SD

I

SDM

IRF710

Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode

D

- - 2.0 A

- - 5.0 A

G

S

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q

TJ = 25oC, ISD= 2.0A, VGS = 0V (Figure 13) - - 1.6 V

SD

TJ = 25oC, ISD = 2.0A, dISD/dt = 100A/µs 110 - 520 ns

rr

TJ = 25oC, ISD = 2.0A, dISD/dt = 100A/µs 0.40 - 1.4 µC

RR

NOTES:

2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting TJ = 25oC, L = 53µH, RG = 25Ω, peak IAS = 2A.

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

2.0

1.6

1.2

0.8

DRAIN CURRENT (A)

D,

I

0.4

0

50 75 10025 150

TC, CASE TEMPERATURE (oC)

125

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

10

0.5

1

0.2

0.1

0.05

0.02

, THERMAL IMPEDANCE

0.1

0.01

θJC

Z

-2

10

-5

10

SINGLE PULSE

-4

10

-3

10

t

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

4-222

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

-2

10

, RECTANGULAR PULSE DURATION (s)

1

P

DM

t

1

t

t

2

θJC

2

2

+ T

C

NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ= PDMx Z

0.1 1 10

IRF710

Typical Performance Curves

2

10

OPERATION IN THIS
REGION IS LIMITED
BY r

DS(ON)

10

1

, DRAIN CURRENT (A)

0.1

D

I

T

= 25oC

C

TJ = MAX RATED
SINGLE PULSE

-2

10

110

VDS, DRAIN TO SOURCE VOLTAGE (V)

Unless Otherwise Specified (Continued)

3.0

2.4

10µs

100µs

1ms

10ms

DC

2

10

3

10

1.8

1.2

, DRAIN CURRENT (A)

D

I

0.6

10V

6.0V

0

40 80 120 1600

V

DRAIN TO SOURCE VOLTAGE (V)

DS,

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

5.5V

VGS = 5.0V

4.5V

4.0V

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

3.0

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

2.4

1.8

1.2

, DRAIN CURRENT (A)

D

I

0.6

0

36912015
V

DS,

10V

6.0V

5.5V

VGS = 5.0V

4.5V

4.0V

DRAIN TO SOURCE VOLTAGE (V)

10

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

V

≥ 50V

DS

1

0.1

, DRAIN TO SOURCE CURRENT (A)

-2

DS(ON)

10

I

0 246810

TJ = 150oC

VSD, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

200

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

30

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

24

18

12

, DRAIN TO SOURCE

ON RESISTANCE (Ω)

DS(ON)

6

r

0

05

12

ID,DRAIN CURRENT (A)

3

VGS = 10V

VGS = 20V

4

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

3.0

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I

= 2.0A, VGS = 10V

D

2.4

1.8

1.2

0.6

NORMALIZED DRAIN TO SOURCE

ON RESISTANCE VOLTAGE

DS(ON),

0

R

-40 60 16012080400-60 -20

20

T

, JUNCTION TEMPERATURE (oC)

J

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

4-223

100

140

IRF710

Typical Performance Curves

1.25
ID = 250µA

1.15

1.05

0.95

BREAKDOWN VOLTAGE

0.85

NORMALIZED DRAIN TO SOURCE

0.75

-40 60 16012080400-60 -20

20

, JUNCTION TEMPERATURE (oC)

T

J

Unless Otherwise Specified (Continued)

100

140

FIGURE 10. NORMALIZED DRAIN TOSOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

2.0

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.6

1.2

0.8

, TRANSCONDUCTANCE (S)

0.4

fs

g

0

0.4 0.8 1.2 1.60 2.0
ID,DRAIN CURRENT (A)

TJ = 25oC

TJ = 150oC

500

VGS = 0V, f = 1MHz

= CGS + C

C
C

400

C

300

200

C, CAPACITANCE (pF)

100

0

12

ISS
RSS

OSS

= C

≈ C

GD

GD

+ C

DS

GS

C

ISS

C

OSS

C

RSS

525

V

DRAIN TO SOURCE VOLTAGE (V)

DS,

10

10

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

10

PULSE DURATION = 80µs

5

DUTY CYCLE = 0.5% MAX

2
1

5

TJ = 150oC

2

0.1
5

, SOURCE TO DRAIN CURRENT (A)

2

SD

I

-2

10

0 0.4 0.8 1.2 2.0

VSD, SOURCE TO DRAIN VOLTAGE (V)

TJ = 25oC

1.6

2

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20

ID = 2.0A

16

VDS = 80V

12

8

4

GATE TO SOURCE VOLTAGE (V)

GS,

V

0

VDS = 200V

VDS = 320V

36912015

Qg,GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

4-224

IRF710

Test Circuits and Waveforms

V

DS

BV

DSS

L

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

AS

R

G

+

V

DD

-

DUT

0V

P

I

AS

0

t

0.01Ω

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

t

P

I

AS

t

AV

V

DS

V

DD

t

ON

t

d(ON)

t

R

L

+

V

R

G

DD

-

V

DS

0

r

90%

10%

DUT

V

GS

V

GS

10%

0

50%

PULSE WIDTH

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

V

DS

D

S

CURRENT

I

D

SAMPLING

(ISOLATED
SUPPLY)

SAME TYPE
AS DUT

DUT

V

DS

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

DS

0

I

G(REF)

0

12V

BATTERY

0

0.2µF

50kΩ

I

G(REF)

CURRENT

REGULATOR

0.3µF

G

IG CURRENT

SAMPLING

RESISTOR RESISTOR

t

d(OFF)

90%

V

GS

t

OFF

50%

t

f

90%

10%

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

4-225

IRF710

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly , the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

Sales Office Headquarters

NORTH AMERICA

Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: [phone]
FAX: [phone]

4-226

EUROPE

Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: [phone]
FAX: [phone]

ASIA

Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: [phone]
FAX: [phone]