Datasheet irf6691 Datasheet

PD - 95867

IRF6691

HEXFET® Power MOSFET plus Schottky Diode

l Application Specific MOSFETs l Integrates Monolithic Trench Schottky Diode

l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques

V

20V

DSS

R

DS(on)

2.5mΩ@V

1.8mΩ@V

MT

max

= 4.5V

GS

= 10V

GS

DirectFET ISOMETRIC

Qg(typ.)

47nC

Applicable DirectFET Package/Layout Pad (see p.8,9 for details)

SQ SX ST MQ MX

MT

Description

The IRF6691 combines IRs industry leading DirectFET package technology with the latest monolithic die technology,

which integrates MOSFET plus free-wheeling Schottky diode. The DirectFET package is compatible with existing layout

geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal

resistance by 80%.

The IRF6691 is characterized with reduced on resistance (R voltage (VSD) to reduce conduction, reverse recovery and deadtime losses. These reduced total losses along with high Cdv/dt immunity make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6691 has been optimized for parameters that are critical for synchronous

MOSFET sockets operating in 12 volt buss converters.

), reverse recovery charge (Qrr) and source to drain

DS(on)

Absolute Maximum Ratings

V

DS

V

GS

I

@ TC = 25°C

D

@ TA = 25°C

I

D

@ TA = 70°C

I

D

I

DM

PD @TA = 25°C

PD @TA = 70°C

@TC = 25°C

P

D

T

J

T

STG

Parameter Units

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

c g g

@ 10V

GS

@ 10V

GS

@ 10V

GS

Max.

20

±12

180

32

26

260

2.8

1.8

89

0.022

-40 to + 150

V

A

W

W/°C

°C

Thermal Resistance

Parameter Typ. Max. Units

R

JA

θ

R

JA

θ

R

JA

θ

R

JC

θ

R

J-PCB

θ

Notes  through  are on page 10

Junct ion-to-Ambient

Junct ion-to-Case

Junct ion-to-PCB Mounted

fj gj hj

ij

––– 45

12.5 –––

20 ––– °C/W

––– 1.4

1.0 –––

www.irf.com 1

4/28/04

IRF6691

gy

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV

∆ΒV

R

DS(on)

V

GS(th)

∆V

I

DSS

I

GSS

DSS

GS(th)

/∆T

Drain-to-Source Breakdown Voltage

/∆T

Breakdown Voltage Temp. Coefficient

J

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coeff icient

J

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

gfs Forward Transconductance

Q

R

t

C

g

sw

oss

G

d(on)

r

d(off)

f

iss

oss

rss

Q

gs1

Q

gs2

Q

gd

Q

godr

Total Gate Charge

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Q

gs2

+ Qgd)

Output Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Avalanche Characteristics

Parameter Units

E

AS

I

AR

Single Pulse Avalanche Ener

Avalanche Current

c

d

20 ––– ––– V

–––12–––mV/°C

––– 1.8 2.5

––– 1.2 1.8

1.6 ––– 2.5 V

––– -4.1 ––– mV/°C

––– ––– 1.4 mA

––– ––– 500 µA

––– ––– 5 mA

––– ––– 100 nA

––– ––– -100

110 ––– ––– S

––– 47 71 –––14–––

––– 4.4 ––– nC

–––15–––

––– 14 ––– See Fig. 17

–––19––– –––30–––nC

––– 0.60 1.5 Ω –––23–––

–––95–––ns

–––25–––

–––10––– –––6580–––

––– 2070 ––– pF

––– 840 –––

Typ.

–––

Conditions

VGS = 0V, ID = 1.0mA

Reference to 25°C, I

Ω

m

V

= 4.5V, ID = 12A

GS

VGS = 10V, ID = 15A

V

= VGS, ID = 250µA

DS

I

= 10mA, reference to 25°C

D

VDS = 20V, VGS = 0V

V

= 16V, VGS = 0V

DS

= 16V, VGS = 0V, TJ = 125°C

V

DS

= 12V

V

GS

V

= -12V

GS

V

= 10V, ID = 26A

DS

VDS = 10V

= 4.5V

V

GS

I

= 17A

D

= 10V, VGS = 0V

V

DS

V

= 16V, VGS = 4.5V

DD

I

= 26A

D

Clamped Inductive Load

= 0V

V

GS

= 10V

V

DS

ƒ = 1.0MHz

Max.

230

26

= 10mA

D

e

e

mJ

A

Diode Characteristics

Parameter Min. Typ. Max. Units

I

S

Continuous Source Current ––– ––– 32

(Body Diode) A

I

SM

V

SD

t

rr

Q

rr

Pulsed Source Current ––– ––– 260

(Body Diode)

c

Diode Forward Voltage ––– ––– 0.65 V

Reverse Recovery Time ––– 32 48 ns

Reverse Recovery Charge ––– 26 39 nC

MOSFET symbol

showing the integral reverse

p-n junction diode. TJ = 25°C, IS = 25A, VGS = 0V

= 25°C, IF = 25A

T

J

di/dt = 100A/µs

Conditions

G

e

2 www.irf.com

D

S

e

IRF6691

1000

) A

(

100

t n e

r

r u

C e

c

r

10

u o S

o

t

n

i a

r

1

D ,

D

I

0.1

2.7V

60µs PULSE WIDTH

≤

Tj = 25°C

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

TOP 10V

BOTTOM 2.7V

VGS

7.0V

4.5V

4.0V

3.5V

3.2V

2.9V

1000

TOP 10V

) A

( t n e

r

100

r u

C e

c

r u o S

o

t

-

10

n

i a

r D

,

D

I

2.7V

≤

BOTTOM 2.7V

60µs PULSE WIDTH

Tj = 150°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

VGS

7.0V

4.5V

4.0V

3.5V

3.2V

2.9V

1000

)

Α

(

t

100

n e

r

r u

C e

c

r

10

u o S

o

t

n

i a

r

1

D ,

D

I

TJ = 150°C

TJ = 25°C

V

= 10V

DS

≤

60µs PULSE WIDTH

0.1 1 2 3 4 5

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

1.5

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

ID = 32A

V

= 10V

GS

) d e z

i

l

1.0

a m

r o

N

(

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance

vs. Temperature

www.irf.com 3

IRF6691

100000

) F

10000

p

( e c n a

t

i c a p a

C ,

1000

C

100

V

= 0V, f = 1 MHZ

GS

C

= C

+ Cgd, C

gs

gd

+ C

ds

gd

iss

C

rss

C

oss

C

iss

C

oss

C

rss

1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

SHORTED

6.0 ID= 17A

)

5.0

V

( e

g a

t

l

4.0

o V

e c

r u

3.0

o S

o

t

e

t

2.0

a G

,

S G

1.0

V

0.0

0 102030405060

Q

VDS= 16V

VDS= 10V

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

1000

) A

( t n e

r

100

u C n

i a

r D e

s

r e v

10

e R

,

D S

I

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ = 150°C

TJ = 25°C

VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

V

GS

= 0V

1000

OPERATION IN THIS AREA

) A

( t n e

r

100

u C e

c

r u o S

o

t

n

10

i a

r D ,

TA = 25°C

D

I

Tj = 150°C Single Pulse

1

0 1 10 100

LIMITED BY RDS(on)

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

100µsec

1msec

10msec

Forward Voltage

4 www.irf.com

IRF6691

τ

200

175

150

) A

( t

125

n e

r

r u

C

100

n

i a

r

75

D ,

D

I

50

25

0

25 50 75 100 125 150

TC , Case Temperature (°C)

Fig 9. Maximum Drain Current vs.

Case Temperature

2.5

) V

( e

g a

t

l o

2.0

V d

l o h s e

r h

t e

t a

1.5

G

) h

t

( S G

V

1.0

-75 -50 -25 0 25 50 75 100 125 150

ID = 250µA

TJ , Temperature ( °C )

Fig 10. Threshold Voltage vs. Temperature

100

D = 0.50

)

A J h

t

Z (

e s n o p s e

R l a

m

r e h T

10

1

0.1

0.01

0.001

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

R

1

2

R

1

τ

2

τ

3

R

2

3

τ

3

τ

2

3

Ri (°C/W) τi (sec)

4

R

4

0.678 0.000860

τ

C

τ

17.30 0.577560

4

τ

4

17.57 8.940000

9.470 106.0000

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + Tc

0.0001

1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com 5

IRF6691

A

)

10

Ω

m (

9

e c n

8

a

t s

i s

7

e R n

6

O e

c

r

5

u o S

-

4

o

t

n

3

i a

r

D

2

,

) n o

1

( S D

0

R

2 3 4 5 6 7 8 9 10

V

GS,

ID = 32A

TJ = 125°C

TJ = 25°C

Gate -to -Source Voltage (V)

1000

) J

m

( y

g

r

800

e n E

e h c

600

n a

l a v A

e s

400

l u P

e

l g n

i

200

S ,

S A

E

0

25 50 75 100 125 150

TOP 12A

BOTTOM26A

Starting TJ , Junction Temperature (°C)

I

D

15A

Fig 12. On-Resistance vs. Gate Voltage

15V

DRIVER

+

V

DD

-

R

V

20V

V

DS

G

GS

L

D.U.T

I

AS

Ω

0.01

t

p

Fig 13a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

Fig 13c. Maximum Avalanche Energy

vs. Drain Current

L

V

DS

V

GS

Pulse Width < 1µs

Duty Factor < 0.1%

D

D.U.T

Fig 14a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

+

-

V

DD

I

AS

Fig 13b. Unclamped Inductive Waveforms

t

d(on)

r

Fig 14b. Switching Time Waveforms

t

d(off)

t

f

6 www.irf.com

IRF6691





Reverse Recovery Current

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied Voltage

+

-

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

Current Regulator

Same Type as D.U.T.

Vds

Vgs

50KΩ

12V

.2µF

.3µF

D.U.T.

+

V

DS

-

Vgs(th)

V

GS

3mA

I

G

Current Sampling Resistors

Fig 16. Gate Charge Test Circuit

I

D

Qgs1

Qgs2 Qgd Qgodr

Fig 17. Gate Charge Waveform

www.irf.com 7

Id

IRF6691

DirectFET Outline Dimension, MT Outline (Medium Size Can, T-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.

DIMENSIONS

IMPERIAL

MIN

0.246

0.189

0.152

0.014

0.031

0.035

0.070

0.039

0.025

0.035

0.097

0.023

0.001

0.003

MAX

0.250

0.199

0.156

0.018

0.032

0.036

0.072

0.040

0.026

0.039

0.104

0.028

0.003

0.007

NOTE: CONTROLLING DIMENSIONS ARE IN MM

CODE A B C D E F G H J K L M N P

METRIC

MIN

6.25

4.80

3.85

0.35

0.78

0.88

1.78

0.98

0.63 O.88

2.46

0.59

0.03

0.08

MAX

6.35

5.05

3.95

0.45

0.82

0.92

1.82

1.02

0.67

1.01

2.63

0.70

0.08

0.17

8 www.irf.com

IRF6691

DirectFET Board Footprint, MT Outline (Medium Size Can, T-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

DirectFET Tape & Reel Dimension (Showing component orientation).

NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6691). For 1000 parts on 7" reel, order IRF6691TR1

STANDARD OPTION (QTY 4800)

METRIC

MIN

CODE A B C D E F G H

330.0

20.2

12.8

1.5

100.0 N.C

12.4

11.9

MAX N.C N.C

13.2 N.C N.C

18.4

14.4

15.4

REEL DIMENSIONS

IMPER IAL

MIN

MAX

12.992

N.C

0.795

N.C

0.504

0.520

0.059

N.C

3.937

N.C

0.724

0.488

0.567

0.469

0.606

TR1 OPTION (QTY 1000)

METRIC

MIN

MAX

177.77

N.C

19.06

N.C

13.5

12.8

1.5

N.C

58.72

N.C

13.50

11.9

12.01

11.9

12.01

MIN

6.9

0.75

0.53

0.059

2.31

N.C

0.47

IMPERIAL

MAX N.C N.C

0.50 N.C N.C

0.53 N.C N.C

www.irf.com 9

IRF6691

DirectFET Part Marking

Notes:



Repetitive rating; pulse width limited by

max. junction temperature.

 Starting T

RG = 25Ω, I

= 25°C, L = 0.72mH,

J

= 26A.

AS

 Pulse width ≤ 400µs; duty cycle ≤ 2%.  Surface mounted on 1 in. square Cu board.

 Used double sided cooling , mounting pad.  Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

 T

measured with thermal couple mounted to top (Drain) of

C

part.

 R

is measured at T

θ

of approximately 90°C.

J

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.04/04

10 www.irf.com