Datasheet irf6620 Datasheet

PD - 95823A

IRF6620

l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with Existing Surface Mount

V

DSS

20V

HEXFET® Power MOSFET

R

DS(on)

max

Qg(typ.)

2.7mΩ@VGS = 10V

3.6mΩ@V

= 4.5V

GS

28nC

Techniques

MX

Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)

SQ SX ST MQ MX MT

DirectFET ISOMETRIC

Description

The IRF6620 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6620 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6620 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6620 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.

Absolute Maximum Ratings

V

DS

V

GS

@ TC = 25°C

I

D

@ TA = 25°C

I

D

@ TA = 70°C

I

D

I

DM

PD @TA = 25°C PD @TA = 70°C

@TC = 25°C

P

D

E

AS

I

AR

T

J

T

STG

Drain-to-Source Voltage V Gate-to-Source Voltage Continuous Drain Current, V Continuous Drain Current, V Continuous Drain Current, V Pulsed Drain Current Power Dissipation Power Dissipation Power Dissipation Single Pulse Avalanche Energy Avalanche Current Linear Derating Factor W/°C Operating Junction and °C Storage Temperature Range

Thermal Resistance

R R R R R

θ

JA

θ

JA

θ

JA

θ

JC

θ

J-PCB

Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted 1.0 –––

Parameter Units

@ 10V

GS

@ 10V

GS

@ 10V

GS

c g g

d

c

Max.

20

±20

150

27 22

220

2.8

1.8 89 39 22

0.017

-40 to + 150

Parameter Typ. Max. Units

fj gj hj

ij

––– 45

12.5 ––– 20 ––– °C/W

––– 1.4

A

W

mJ

A

Notes  through  are on page 2

www.irf.com 1

4/2/04

IRF6620

/

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV

DSS

DS(on)

GS(th)

DSS

∆T

∆ΒV

R

V ∆V I

DSS

I

GSS

gfs Forward Transconductance 110 ––– ––– S Q

g

Q

gs1

Q

gs2

Q

gd

Q

godr

Q

sw

Q

oss

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 20 ––– ––– V Breakdown Voltage Temp. Coefficient ––– 16 ––– mV/°C

J

Static Drain-to-Source On-Resistance ––– 2.1 2.7

mΩ

––– 2.8 3.6 Gate Threshold Voltage 1.55 ––– 2.45 V Gate Threshold Voltage Coefficient ––– -5.8 ––– mV/°C

J

Drain-to-Source Leakage Current ––– ––– 1.0 µA

––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100

Total Gate Charge ––– 28 42 Pre-Vth Gate-to-Source Charge ––– 9.5 ––– Post-Vth Gate-to-Source Charge ––– 3.5 ––– nC Gate-to-Drain Charge ––– 8.8 ––– Gate Charge Overdrive ––– 6.2 ––– See Fig. 17 Switch Charge (Q

gs2

+ Qgd)

––– 12 ––– Output Charge ––– 16 ––– nC Turn-On Delay Time ––– 18 ––– Rise Time ––– 80 ––– Turn-Off Delay Time ––– 20 ––– ns Fall Time ––– 6.6 ––– Input Capacitance ––– 4130 ––– Output Capacitance ––– 1160 ––– pF Reverse Transfer Capacitance ––– 560 –––

Conditions

VGS = 0V, ID = 250µA Reference to 25°C, I

= 10V, ID = 27A

V

GS

V

= 4.5V, ID = 22A

GS

= VGS, ID = 250µA

V

DS

V

= 16V, VGS = 0V

DS

= 16V, VGS = 0V, TJ = 125°C

V

DS

= 20V

V

GS

= -20V

V

GS

V

= 10V, ID = 22A

DS

VDS = 10V

= 4.5V

V

GS

I

= 22A

D

V

= 10V, VGS = 0V

DS

= 16V, VGS = 4.5V

V

DD

I

= 22A

D

Clamped Inductive Load

V

= 0V

GS

= 10V

V

DS

ƒ = 1.0MHz

= 1mA

D

e

e

Diode Characteristics

Parameter Min. Typ. Max. Units

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Starting T

RG = 25Ω, I

 Pulse width ≤ 400µs; duty cycle ≤ 2%.  Surface mounted on 1 in. square Cu board.

Continuous Source Current ––– ––– 3.5 (Body Diode) A

Pulsed Source Current ––– ––– 220 (Body Diode)

c

Diode Forward Voltage ––– 0.8 1.0 V Reverse Recovery Time ––– 23 35 ns Reverse Recovery Charge ––– 13 20 nC

= 25°C, L = 0.16mH,

J

= 22A.

AS

Conditions

MOSFET symbol showing the

integral reverse p-n junction diode.

= 25°C, IS = 22A, VGS = 0V

T

J

= 25°C, IF = 22A

T

J

di/dt = 100A/µs

 Used double sided cooling, mounting pad.  Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

 T

measured with thermal couple mounted to top (Drain) of

C

part.

 R

is measured at T

θ

of approximately 90°C.

J

D

G

S

e

2 www.irf.com

IRF6620

1000

) A

(

t

100

n

e

r

u C e

c

r

10

u

o S

-

o

t

-

n

i

a

r

1

D

,

D

I

2.7V

≤

TOP 10V

BOTTOM 2.7V

60µs PULSE WIDTH

Tj = 25°C

0.1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000.0

)

Α

(

t

100.0

n

e

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

D

I

TJ = 150°C

10.0

TJ = 25°C

1.0

V

= 10V

DS

≤

0.1

2.5 3.0 3.5 4.0 4.5 5.0

60µs PULSE WIDTH

VGS, Gate-to-Source Voltage (V)

VGS

7.0V

4.5V

4.0V

3.5V

3.2V

2.9V

1000

) A

(

t

n

e

r

100

u C e

c

r

u

o S

-

o

t

-

10

n

i

a

r D

,

D

I

2.7V

≤

60µs PULSE WIDTH

Tj = 150°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1.5

e

c

n

a

t

s

i

s

e R n O e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

)

n

o

( S D

R

ID = 27A V

= 10V

GS

)

d

e

z

i

l

1.0

a m

r

o N

(

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

TOP 10V

BOTTOM 2.7V

VGS

7.0V

4.5V

4.0V

3.5V

3.2V

2.9V

Fig 3. Typical Transfer Characteristics

100000

) F

10000

p

( e

c

n

a

t

i

c

a

p

a C

1000

, C

100

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C C C

iss rss oss

= C

+ Cgd, C

gs

gd

+ C

ds

SHORTED

ds

gd

Ciss

Coss

Crss

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

Fig 4. Normalized On-Resistance vs. Temperature

12

)

ID= 20A

V

10

( e

g

a

t

l

o

8

V e

c

r

u

6

o S

-

o

t

-

e

t

4

a G

,

S G

2

V

VDS= 20V VDS= 10V

0

0 20406080

Q

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

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IRF6620

τ

1000.0

) A

(

t

100.0

n

e

r

u C n

i

a

r

10.0

D e

s

r

e

v

e R

,

1.0

D S

I

TJ = 150°C

TJ = 25°C

V

GS

= 0V

0.1

0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

150

120

) A

(

t

n

e

90

r

u C n

i

a

r

60

D

,

D

I

30

1000

OPERATION IN THIS AREA LIMITED BY RDS(on)

) A

(

t

100

n

e

r

u C e

c

r

u

10

o S

-

o

t

-

n

i

a

r D

1

,

D

I

Tc = 25°C Tj = 150°C Single Pulse

0.1 0 1 10 100

V

, Drain-toSource Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

2.5

) V

( e

g

a

t

l

o

2.0

V d

l

o

h

s

e

r

h

t e

t

a

1.5

G

)

h

t

( S G

V

100µsec

1msec

10msec

ID = 250µA

0

25 50 75 100 125 150

TJ , Junction Temperature (°C)

Fig 9. Maximum Drain Current vs. Case Temperature

100

D = 0.50

)

10

A

J

h

t

Z (

1

e

s

n

o

p

s

e

0.1

R

l

a m

r

e

h T

0.01

0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

t1 , Rectangular Pulse Duration (sec)

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

1.0

-75 -50 -25 0 25 50 75 100 125 150

TJ , Temperature ( °C )

Fig 10. Threshold Voltage vs. Temperature

R

1

2

R

1

τ

2

τ

3

R

2

3

τ

3

τ

2

3

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + Tc

Ri (°C/W) τi (sec)

4

R

4

1.28011 0.000322

τ

C

τ

8.72556 0.164798

4

τ

4

21.75 2.2576

13.251 69

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

4 www.irf.com

A

)

Ω

12

m

( e

c

n

10

a

t

s

i

s

e R

8

n O e

c

r

6

u

o S

o

t

4

-

n

i

a

r D

2

,

)

n

o

(

S

0

D

R

2.0 4.0 6.0 8.0 10.0

TJ = 125°C

VGS, Gate-to-Source Voltage (V)

ID = 27A

TJ = 25°C

IRF6620

160

)

J m

( y

g

r

e

120

n E

e

h

c

n

a

l

a

80

v A

e

s

l

u P

e

l

40

g

n

i S

, S A

E

0

25 50 75 100 125 150

Starting TJ, Junction Temperature (°C)

I

TOP

D

7.2A

8.4A

BOTTOM

22A

Fig 12. On-Resistance Vs. Gate Voltage

15V

DRIVER

+

V

DD

-

R

V

20V

V

DS

G

GS

L

D.U.T

I

AS

0.01

t

p

Ω

Fig 13a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 13b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

D.U.T.

+

V

DS

-

Fig 13c. Maximum Avalanche Energy Vs. Drain Current

L

V

DS

D

+

-

V

DD

D.U.T

V

GS

Pulse Widt h < 1µs

Duty Factor < 0.1%

Fig 14a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 14b. Switching Time Waveforms

Vds

Id

Vgs

V

GS

3mA

I

Current Sampling Resistors

D

G

Fig 15. Gate Charge Test Circuit

www.irf.com 5

Vgs(th)

Qgs1

Qgs2 Qgd Qgodr

Fig 16. Gate Charge Waveform

IRF6620





D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• di/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

Reverse Recovery

+

-

Current

Re-Applied Voltage

+

V

DD

Driver Gate Drive

P.W.

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Current

Inductor Curent

* V

= 5V for Logic Level Devices

GS

Period

Body Diode Forward

Diode Recovery

Body Diode Forward Drop

Ripple ≤ 5%

Current

dv/dt

di/dt

D =

P.W.

Period

VGS=10V

V

DD

I

SD

*

Fig 17. Diode Reverse Recovery Test Circuit for N-Channel

HEXFET® Power MOSFETs

DirectFET Substrate and PCB Layout, MX Outline (Medium Size Can, X-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.

1- Drain 2- Drain 3- Source 4- Source 5- Gate 6- Drain 7- Drain

6

3

5

4

7

1

2

6 www.irf.com

DirectFET Outline Dimension, MX Outline (Medium Size Can, X-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.

IRF6620

Note: Controlling dimensions are in mm

DirectFET Part Marking

CODE

A B C D E F G H J K L M N

DIMENSIONS

METRIC

MAX

MIN

6.35

6.25

5.05

4.80

3.95

3.85

0.45

0.35

0.72

0.68

0.72

0.68

1.42

1.38

0.84

0.80

0.42

0.38

1.01

0.88

2.41

2.28

0.70

0.59

0.08

0.03

IMPERIAL

MIN

0.246

0.189

0.152

0.014

0.027

0.054

0.032

0.015

0.035

0.090

0.023

0.001

MAX

0.250

0.201

0.156

0.018

0.028

0.056

0.033

0.017

0.039

0.095

0.028

0.003

www.irf.com 7

IRF6620

DirectFET Tape & Reel Dimension (Showing component orientation).

NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6618). For 1000 parts on 7" reel, order IRF6618TR1

REEL DIMENSIONS

STANDARD OPTION (QTY 4800)

MIN

330.0

20.2

12.8

1.5

100.0 N.C

12.4

11.9

METRIC

MAX N.C N.C

13.2 N.C N.C

18.4

14.4

15.4

CODE A B C D E F G H

IMPERIAL

MIN

12.992

0.795

0.504

0.059

3.937 N.C

0.488

0.469

MAX N.C N.C

0.520 N.C N.C

0.724

0.567

0.606

TR1 OPTION (QTY 1000)

METRIC

MIN

MAX

177.77

N.C

19.06

N.C

13.5

12.8

1.5

N.C

58.72

N.C

13.50

11.9

12.01

11.9

12.01

MIN

6.9

0.75

0.53

0.059

2.31 N.C

0.47

IMPERIAL

MAX N.C N.C

0.50 N.C N.C

0.53 N.C N.C

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.4/04

8 www.irf.com