Datasheet irf6618 Datasheet

Absol

Pulsed Drain C

t

c

P

Dissipation

g

P

Dissipation

g

Aval

Ch

Single Pulse Aval

d

Aval

t

c

Th

l Resi

J

fj

J

g

J

t

h

J

i

PD - 94726C

IRF6618/IRF6618TR1

HEXFET® Power MOSFET

l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount

V

30V

DSS

R

DS(on)

2.2mΩ@V

max

= 10V

GS

3.4mΩ@VGS = 4.5V

Qg

43 nC

Techniques

MT

Applicable DirectFET Package/Layout Pad (see p.8,9 for details)

DirectFET ISOMETRIC

SQ SX ST MQ MX MT

Description

The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6618 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6618 has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6618 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.

ute Maximum Ratings

V

DS

V

GS

I

@ TC = 25°C

D

@ TA = 25°C

I

D

@ TA = 70°C

I

D

I

DM

PD @TA = 25°C PD @TA = 70°C P

@TC = 25°C

D

T

J

T

STG

anche

E

AS

I

AR

erma

R

θ

JA

R

θ

JA

R

θ

JA

R

θ

JC

R

θ

J-PCB

Parameter Units

Drain- to-Source Voltage V Gate-to-Source Voltage

Continuous Drain Current, V Continuous Drain Current, V Continuous Drain Current, V

urren ower ower

Power Dissipation Linear Derating Factor W/°C

Operating Junc tion and °C Storage Temperature Range

@ 10V

GS

@ 10V

GS

@ 10V

GS

Max.

30

±20

150

30 24

240

2.8

1.8 89

0.022

-40 to + 150

A

W

aracteristics

Parameter Typ. Max. Units

anche Curren

anche Energy



––– 210 mJ ––– 24 A

stance

Parameter Typ. Max. Units

unction-to-Ambient unction-to-Ambient unction-to-Ambien unction-to-Case

Junction-to-PCB Mounted 1.0 –––

––– 45

12.5 ––– 20 ––– °C/W

––– 1.4

Notes  through  are on page 9

www.irf.com 1

3/16/04

IRF6618/IRF6618TR1

/

(

)

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV

DSS

V

DS(on)

GS(th)

DSS

∆

∆T

∆Β

R

V ∆V

I

DSS

I

GSS

gfs Forward Transconductance 100 ––– ––– S Q

g

Q

gs1

Q

gs2

Q

gd

Q

godr

Q

sw

Q

oss

R

G

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltag e 30 ––– ––– V

T

Breakdown Voltage Temp. Coefficient ––– 23 ––– mV/°C

J

Static Drain-to-Source On-Resistance ––– 1.7 2.2

mΩ

––– ––– 3.4 Gate Threshold Voltage 1.35 1.64 2.35 V Gate Threshold Voltage Coefficient ––– -5.7 ––– mV/°C

J

––– ––– 5.0 Drain-to-Source Leakage Current ––– ––– 1.0 µA

––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100

Total Gate Charge ––– 43 65 Pre-Vth Gate-to-Source Charge ––– 12 ––– Post-Vth Gate-to-Source Charge ––– 4.0 ––– nC Gate-to-Drain Charge ––– 15 23 Gate Charge Overdrive ––– 12 ––– See Fig. 16

Switch Charge (Q

+ Qgd)

gs2

––– 19 ––– Output Charge ––– 28 ––– nC Gate Resistance ––– 1.0 2.2 Ω Turn-On Delay Time ––– 21 ––– Rise Time ––– 71 ––– Turn-Off Delay Time ––– 27 ––– ns Fall Time ––– 8.1 ––– Input Capacitance ––– 5640 ––– Output Capacitance ––– 1260 ––– pF Reverse Trans fer Capacitance ––– 570 –––

Conditions

VGS = 0V, ID = 250µA Reference to 25°C, I

= 10V, ID = 30A

V

GS

V

= 4.5V, ID = 24A

GS

VDS = VGS, ID = 250µA

V

= 30V, VGS = 0V

DS

V

= 24V, VGS = 0V

DS

= 24V, VGS = 0V, TJ = 150°C

V

DS

= 20V

V

GS

= -20V

V

GS

V

= 15V, ID = 24A

DS

VDS = 15V

= 4.5V

V

GS

= 24A

I

D

V

= 15V, VGS = 0V

DS

V

= 15V, VGS = 4.5V

DD

= 24A

I

D

Clamped Inductive Load

= 0V

V

GS

= 15V

V

DS

ƒ = 1.0MHz

= 1mA

D

e

e

Diode Characteristics

Parameter Min. Typ. Max. Units

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current ––– ––– 30 (Body Diode) A

Pulsed Source Current ––– ––– 240

Body Diode

c

Diode Forward Voltage ––– 0.78 1.2 V Reverse Recovery Time ––– 43 65 ns Reverse Recovery Charge ––– 46 69 nC

MOSFET symbol showing the

int egral re v e rs e p-n junction diode.

TJ = 25°C, IS = 24A, VGS = 0V TJ = 25°C, IF = 24A

di/dt = 100A/µs

2 www.irf.com

Conditions

D

G

S

e

IRF6618/IRF6618TR1

1000

TOP 10V

) A

(

t

n

e

r

100

r

u C e

c

r

u

o S

-

o

t

-

10

n

i

a

r D

,

D

I

2.7V

60µs PULSE WIDTH

≤

BOTTOM 2.7V

Tj = 25°C

1

0.1 1 10 100 VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

)

Α

(

t

100

n

e

r

u C e

c

r

10

u

o S

-

o

t

-

n

i

a

r

1

D

,

D

I

TJ = 150°C

V

DS

TJ = 25°C

= 10V

≤60µs PULSE WIDTH

0.1

1.5 2.0 2.5 3.0 3.5 4.0

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

VGS

7.0V

4.5V

4.0V

3.5V

3.2V

2.9V

1000

VGS

7.0V

4.5V

4.0V

3.5V

3.2V

2.9V

) A

(

t

n

e

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D

, I

100

D

10

TOP 10V

BOTTOM 2.7V

2.7V

60µs PULSE WIDTH

≤

Tj = 150°C

0.1 1 10 100 VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1.5

e

c

n

a

t

s

i

s

e R n O e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

)

n

o

( S D

R

ID = 30A V

= 10V

GS

)

d

e

z

i

l

1.0

a m

r

o N

(

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance vs. Temperature

100000

) F

10000

p

(

e

c

n

a

t

i

c

a

p

a C

,

1000

C

100

V

= 0V, f = 1 MHZ

GS

C

= C

iss

oss

rss

= C

+ Cgd, C

gs

gd

+ C

ds

gd

iss

C

rss

C

oss

C

1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

SHORTED

6.0 ID= 24A

)

5.0

V

( e

g

a

t

l

4.0

o V

e

c

r

u

3.0

o S

-

o

t

-

e

t

2.0

a G

,

S G

1.0

V

VDS= 24V VDS= 15V

0.0

0 102030405060

Q

Total G ate Charge (nC)

G

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

www.irf.com 3

IRF6618/IRF6618TR1

τ

1000.00

) A

(

t

100.00

n

e

r

u C n

i

a

r

10.00

D e

s

r

e

v

e R

,

1.00

D S

I

TJ = 150°C

TJ = 25°C

V

GS

= 0V

0.10

0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

150

120

) A

(

t

n

e

90

r

u C n

i

a

r

60

D

,

D

I

30

1000

OPERATION IN THIS AREA LIMITED BY RDS(on)

) A

(

t

n

e

r

100

u C e

c

r

u

o S

-

o

t

-

n

10

i

a

r D ,

I

D

TC = 25°C Tj = 150°C

Single Pulse

100µsec

1msec

10msec

1

0 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

2.5

) V

(

2.0

e

g

a

t

l

o V

d

l

1.5

o

h

s

e

r

h

t

1.0

e

t

a G

)

h

t

(

0.5

S G

V

ID = 250µA

0

25 50 75 100 125 150

TJ , Junction Temperature (°C)

Fig 9. Maximum Drain Current vs.

0.0

-75 -50 -25 0 25 50 75 100 125 150

TJ , Temperature ( °C )

Fig 10. Threshold Voltage vs. Temperature

Case Temperature

100

D = 0.50

)

A

J

h

t

Z (

e

s

n

o

p

s

e R

l

a m

r

e

h T

10

1

0.1

0.01

0.001

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

R

1

2

R

1

τ

2

3

R

2

3

τ

3

τ

2

3

Ri (°C/W) τi (sec)

4

R

4

0.6784 0.00086

τ

C

τ

17.299 0.57756

4

τ

4

17.566 8.94

9.4701 106

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + Tc

0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

4 www.irf.com

)

6

Ω

m

( e

c

5

n

a

t

s

i

s

e

4

R n O e

c

r

3

u

o S

o

t

2

-

n

i

a

r

D ,

1

)

n

o

( S D

0

R

TJ = 125°C

TJ = 25°C

2 3 4 5 6 7 8 9 10

V

Gate -to - Source Voltage (V)

GS,

Fig 12. On-Resistance vs. Gate Voltage

15V

V

R

G

20V

VGS

L

DS

D.U.T

I

AS

Ω

t

0.01

p

DRIVER

+

V

DD

-

A

I

AS

ID = 30A

t

IRF6618/IRF6618TR1

900

)

J m

800

( y

g

r

700

e

n E

e

600

h

c

n

a

l

500

a

v A

400

e

s

l

u P

300

e

l

g

n

i

200

S

,

S

100

A

E

0

25 50 75 100 125 150

TOP 9.3A

BOTTOM24A

Starting TJ , Junction Temperature (°C)

Fig 13. Maximum Avalanche Energy

vs. Drain Current

Current Regulator

Same Type as D.U.T.

V

(BR)DSS

p

12V

V

GS

.2µF

50KΩ

.3µF

3mA

D.U.T.

I

D

11A

+

V

-

DS

Fig 14. Unclamped Inductive Test Circuit

and Waveform

L

D

V

DS

+

-

V

DD

D.U.T

V

GS

Pulse Wi dth < 1µs

Duty Factor < 0.1%

Fig 16. Switching Time Test Circuit

I

Current Sampling Resistors

Fig 15. Gate Charge Test Circuit

V

DS

90%

10%

V

GS

t

d(on)

t

r

Fig 17. Switching Time Waveforms

I

t

d(off)

D

t

f

G

www.irf.com 5

IRF6618/IRF6618TR1





Reverse Recovery Current

Driver Gate Drive

P.W.

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied Voltage

+

-

Period

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P.W.

Period

VGS=10V

V

DD

I

SD

*

Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

Vds

Vgs(th)

Qgs1

Id

Vgs

Qgs2 Qgd Qgodr

Fig 16. Gate Charge Waveform

6 www.irf.com

IRF6618/IRF6618TR1

DirectFET Outline Dimension, MT Outline (Medium Size Can, T-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.

www.irf.com 7

IRF6618/IRF6618TR1

DirectFET Board Footprint, MT Outline (Medium Size Can, T-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.

DirectFET Tape & Reel Dimension (Showing component orientation).

NOTE: Controlling dimensions in mm Std reel quant ity is 4800 parts. (order ed as IRF6618). For 1000 parts on 7" reel, order IRF661 8TR1

STANDARD OPTI ON (QTY 4800)

MIN

330.0

20.2

12.8

1.5

100.0 N.C

12.4

11.9

METRIC

MAX N.C N.C

13.2 N.C N.C

18.4

14.4

15.4

CODE A B C D E F G H

REEL DIMENSIO NS

IMPERIAL

MIN

MAX

12.992

N.C

0.795

N.C

0.504

0.520

0.059

N.C

3.937

N.C

0.724

0.488

0.567

0.469

0.606

TR1 OPTION (QTY 1000)

METRIC IMPERIAL

MAX

MIN

177.77

19.06

13.5

1.5

58.72

N.C

11.9

N.C N.C

12.8 N.C N.C

13.50

12.01

6.9

0.75

0.53

0.059

2.31 N.C

0.47

MIN

MAX N.C N.C

0.50 N.C N.C

0.53 N.C N.C

8 www.irf.com

DirectFET Part Marking

IRF6618/IRF6618TR1

Notes:

 Repetitive rating; pulse width limited by max. junction

temperature.

 Starting T

= 25°C, L = 0.75mH, RG = 25Ω, I

J

AS

= 24A.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.  Surface mounted on 1 in. square Cu board.

 Used double sided cooling , mounting pad.  Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

 T

measured with thermal couple mounted to top (Drain) of

C

part.

 R

is measured at T

θ

of approximately 90°C.

J

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.03/04

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