Datasheet irf6617 Datasheet

PD - 95847

IRF6617

l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with Existing Surface Mount Techniques

V

30V

DSS

HEXFET® Power MOSFET

R

DS(on)

8.1mΩ@V

10.3mΩ@V

ST

max

= 10V

GS

= 4.5V

GS

DirectFET ISOMETRIC

Qg(typ.)

11nC

Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details)

SQ SX ST MQ MX MT

Description

The IRF6617 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6617 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6617 has been optimized for parameters that are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Absolute Maximum Ratings

Max.

30

±20

55 14 11

120

2.1

1.4 42 27 12

0.017

-40 to + 150

A

W

mJ

A

V

DS

V

GS

@ TC = 25°C

I

D

@ TA = 25°C

I

D

@ TA = 70°C

I

D

I

DM

PD @TA = 25°C PD @TA = 70°C

@TC = 25°C

P

D

E

AS

I

AR

T

J

T

STG

Parameter Units

Drain-to-Source Voltage V Gate-to-Source Voltage Continuous Drain Current, V Continuous Drain Current, V Continuous Drain Current, V Pulsed Drain Current Power Dissipation Power Dissipation Power Dissipation Single Pulse Avalanche Energy Avalanche Current Linear Derating Factor W/°C Operating Junction and °C Storage Temperature Range

c g g

c

@ 10V

GS

@ 10V

GS

@ 10V

GS

d

Thermal Resistance

Parameter Typ. Max. Units

R R R R R

θ

JA

θ

JA

θ

JA

θ

JC

θ

J-PCB

Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mount ed 1.0 –––

ij

fj gj hj

––– 58

12.5 ––– 20 ––– °C/W

––– 3.0

Notes  through  are on page 2

www.irf.com 1

3/12/04

IRF6617

/

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV

DSS

DS(on)

GS(th)

DSS

GSS

DSS

GS(th)

∆T

∆ΒV

R

V ∆V I

I

gfs Forward Transconductance 39 ––– ––– S Q

g

Q

gs1

Q

gs2

Q

gd

Q

godr

Q

sw

Q

oss

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 30 ––– ––– V Breakdown Voltage Temp. Coefficient ––– 25 ––– mV/°C

J

Static Drain-to-Source On-Resistance ––– 6.2 8.1

mΩ

––– 7.9 10.3 Gate Threshold Voltage 1.35 ––– 2.35 V Gate Threshold Voltage Coefficient ––– -5.4 ––– mV/°C

J

Drain-to-Source Leakage Current ––– ––– 1.0 µA

––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100

Total Gate Charge ––– 11 17 Pre-Vth Gate-to-Source Charge ––– 3.1 ––– Post-Vth Gate-to-Source Charge ––– 1.0 ––– nC Gate-to-Drain Charge ––– 4.0 ––– Gate Charge Overdrive ––– 2.9 ––– See Fig. 17 Switch Charge (Q

gs2

+ Qgd)

––– 5.0 ––– Output Charge ––– 10 ––– nC Turn-On Delay Time ––– 11 ––– Rise Time ––– 34 ––– Turn-Off Delay Time ––– 12 ––– ns Fall Time ––– 3.7 ––– Input Capacitance ––– 1300 ––– Output Capacitance ––– 430 ––– pF Reverse Transfer Capacitance ––– 160 –––

Conditions

VGS = 0V, ID = 250µA Reference to 25°C, I

= 10V, ID = 15A

V

GS

V

= 4.5V, ID = 12A

GS

= VGS, ID = 250µA

V

DS

V

= 24V, VGS = 0V

DS

= 24V, VGS = 0V, TJ = 125°C

V

DS

= 20V

V

GS

= -20V

V

GS

= 15V, ID = 12A

V

DS

= 15V

V

DS

= 4.5V

V

GS

= 12A

I

D

= 15V, VGS = 0V

V

DS

V

= 16V, VGS = 4.5V

DD

I

= 12A

D

Clamped Inductive Load

V

= 0V

GS

= 15V

V

DS

ƒ = 1.0MHz

= 1mA

D

e

e

Diode Characteristics

Parameter Min. Typ. Max. Units

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Starting T

RG = 25Ω, I

 Pulse width ≤ 400µs; duty cycle ≤ 2%.  Surface mounted on 1 in. square Cu board.

Continuous Source Current ––– ––– 53 (Body Diode) A

Pulsed Source Current ––– ––– 120 (Body Diode)

c

Diode Forward Voltage ––– 0.81 1.0 V Reverse Recovery Time ––– 16 24 ns Reverse Recovery Charge ––– 7.2 11 nC

= 25°C, L = 0.40mH,

J

= 12A.

AS

Conditions

MOSFET symbol showing the

integral reverse p-n junction diode.

T

= 25°C, IS = 12A, VGS = 0V

J

= 25°C, IF = 12A

T

J

di/dt = 100A/µs

 Used double sided cooling, mounting pad.  Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

 T

measured with thermal couple mounted to top (Drain) of part.

C

 R

is measured at T

θ

of approximately 90°C.

J

D

G

S

e

2 www.irf.com

IRF6617

1000

) A

(

t

100

n

e

r

u C e

c

r

10

u

o S

-

o

t

-

n

i

a

r

1

D

,

D

I

2.5V

0.1

0.1 1 10 100

≤

Tj = 25°C

TOP 10V

BOTTOM 2.5V

60µs PULSE WIDTH

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000.0

)

Α

(

t

100.0

n

e

r

u C e

c

r

10.0

u

o S

-

o

t

-

n

i

a

r D

,

D

I

TJ = 150°C

TJ = 25°C

1.0

V

= 15V

DS

≤

0.1

1.0 2.0 3.0 4.0 5.0 6.0

60µs PULSE WIDTH

VGS, Gate-to-Source Voltage (V)

VGS

5.0V

4.5V

4.0V

3.5V

3.0V

2.8V

1000

) A

(

t

n

e

r

100

u C e

c

r

u

o S

-

o

t

-

10

n

i

a

r D

,

D

I

2.5V

≤

60µs PULSE WIDTH

Tj = 150°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2.0

e

c

n

a

t

s

i

s

e R n O

)

e

d

c

e

r

z

u

i

l

o

a

S

-

m

r

o

t

o

-

n

N

i

(

a

r D

,

)

n

o

( S D

R

ID = 15A V

= 10V

GS

1.5

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

TOP 10V

BOTTOM 2.5V

VGS

5.0V

4.5V

4.0V

3.5V

3.0V

2.8V

Fig 3. Typical Transfer Characteristics

) F

p

( e

c

n

a

t

i

c

a

p

a C

, C

10000

1000

100

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C C C

iss rss oss

= C

+ Cgd, C

gs

gd

+ C

ds

SHORTED

ds

gd

Ciss

Coss

Crss

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

Fig 4. Normalized On-Resistance vs. Temperature

12

)

ID= 12A

V

10

( e

g

a

t

l

o

8

V e

c

r

u

6

o S

-

o

t

-

e

t

4

a G

,

S G

2

V

VDS= 24V VDS= 15V

0

0 5 10 15 20 25 30

Q

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

www.irf.com 3

IRF6617

τ

1000.0

) A

(

t

100.0

n

e

r

u C n

i

a

r

10.0

D e

s

r

e

v

e R

,

1.0

D S

I

TJ = 150°C

TJ = 25°C

V

GS

= 0V

0.1

0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

60

50

) A

(

40

t

n

e

r

u C

30

n

i

a

r D

,

20

D

I

10

1000

OPERATION IN THIS AREA LIMITED BY RDS(on)

) A

(

t

100

n

e

r

u C e

c

r

u

10

o S

-

o

t

-

n

i

a

r

1

D ,

I

D

Tc = 25°C Tj = 150°C

100µsec

1msec

10msec

Single Pulse

0.1 0 1 10 100 1000

V

, Drain-toSource Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

2.5

) V

( e

g

a

t

l

o

2.0

V d

l

o

h

s

e

r

h

t e

t

a

1.5

G

)

h

t

( S G

V

ID = 250µA

0

25 50 75 100 125 150

TJ , Junction Temperature (°C)

Fig 9. Maximum Drain Current vs. Case Temperature

100

D = 0.50

)

10

A

J

h

t

Z (

1

e

s

n

o

p

s

e

0.1

R

l

a m

r

e

h T

0.01

0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

t1 , Rectangular Pulse Duration (sec)

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

1.0

-75 -50 -25 0 25 50 75 100 125 150

TJ , Temperature ( °C )

Fig 10. Threshold Voltage vs. Temperature

R

1

2

R

1

τ

2

τ

3

R

2

3

τ

3

τ

2

3

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + Tc

Ri (°C/W) τi (sec)

4

R

4

2.023 0.000678

τ

C

τ

19.48 0.240237

4

τ

4

21.78 2.0167

14.71 58

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

4 www.irf.com

A

)

Ω

24

m

( e

c

n

a

t

20

s

i

s

e R n

16

O e

c

r

u

o S

12

o

t

-

n

i

a

r D

8

,

)

n

o

(

S

4

D

R

2.0 4.0 6.0 8.0 10.0

TJ = 125°C

TJ = 25°C

VGS, Gate-to-Source Voltage (V)

ID = 15A

IRF6617

120

)

J m

( y

100

g

r

e

n E

e

80

h

c

n

a

l

a

60

v A

e

s

l

u

40

P e

l

g

n

i S

20

, S A

E

0

25 50 75 100 125 150

Starting TJ, Junction Temperature (°C)

I

TOP

D

5.2A

7.9A

BOTTOM

12A

Fig 12. On-Resistance Vs. Gate Voltage

15V

DRIVER

+

-

V

DD

R

V

20V

V

DS

G

GS

L

D.U.T

I

AS

0.01

t

p

Ω

Fig 13a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 13b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

D.U.T.

+

V

DS

-

Fig 13c. Maximum Avalanche Energy Vs. Drain Current

L

V

DS

D

+

-

V

DD

D.U.T

V

GS

Pulse Widt h < 1µs

Duty Factor < 0.1%

Fig 14a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 14b. Switching Time Waveforms

Vds

Id

Vgs

V

GS

3mA

I

Current Sampling Resistors

D

G

Fig 15. Gate Charge Test Circuit

www.irf.com 5

Vgs(th)

Qgs1

Qgs2 Qgd Qgodr

Fig 16. Gate Charge Waveform

IRF6617





Reverse Recovery Current

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Current

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• di/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied Voltage

+

-

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P.W.

Period

VGS=10V

V

DD

I

SD

*

Fig 17. Diode Reverse Recovery Test Circuit for N-Channel

HEXFET® Power MOSFETs

DirectFET Substrate and PCB Layout, ST Outline (Small Size Can, T-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.

6

3

5

4

7

1

2

1- Drain 2- Drain 3- Source 4- Source 5- Gate 6- Drain 7- Drain

6 www.irf.com

IRF6617

DirectFET Outline Dimension, ST Outline (Small Size Can, T-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.

Note: Controlling

dimensions are in mm

DirectFET Part Marking

CODE A B C D E F G H J K L M N P

DIMENSIONS

METRIC

MAX

MIN

4.85

4.75

3.95

3.70

2.85

2.75

0.45

0.35

0.62

0.58

0.62

0.58

0.79

0.75

0.57

0.53

0.30

0.26

0.98

O.88

2.28

2.18

0.70

0.59

0.08

0.03

0.17

0.08

IMPERIAL

MIN

0.187

0.146

0.108

0.014

0.023

0.030

0.021

0.010

0.035

0.086

0.023

0.001

0.003

MAX

0.191

0.156

0.112

0.018

0.024

0.031

0.022

0.012

0.039

0.090

0.028

0.003

0.007

www.irf.com 7

IRF6617

DirectFET Tape & Reel Dimension (Showing component orientation).

NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6617). For 1000 parts on 7" reel, order IRF6617TR1

STANDARD OPTION (QTY 4800)

METRIC

CODE

MIN

330.0

20.2

12.8

1.5

100.0 N.C

12.4

11.9

MAX N.C N.C

13.2 N.C N.C

18.4

14.4

15.4

A B C D E F G H

REEL DIMENSIONS

IMPERIAL

MIN

MAX

12.992

N.C

0.795

N.C

0.504

0.520

0.059

N.C

3.937

N.C

0.724

0.488

0.567

0.469

0.606

TR1 OPTION (QTY 1000)

METRIC

MIN

MAX

177.77

N.C

19.06

N.C

13.5

12.8

1.5

N.C

58.72

N.C

13.50

11.9

12.01

11.9

12.01

MIN

6.9

0.75

0.53

0.059

2.31

N.C

0.47

IMPERIAL

MAX N.C N.C

0.50 N.C N.C

0.53 N.C N.C

Loaded Tape Feed Direction

NOTE: CONTROLLING DIMENSIONS IN MM

DIMENSIONS

CODE A B C D E F G H

MIN

7.90

3.90

11.90

5.45

5.10

6.50

1.50

METRIC

MAX

8.10

4.10

12.30

5.55

5.30

6.70 N.C

1.60

MIN

0.311

0.154

0.469

0.215

0.201

0.256

0.059

IMPERIAL

MAX

0.319

0.161

0.484

0.219

0.209

0.264 N.C

0.063

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.03/04

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