Datasheet irf6612 Datasheet

@

Absol

Th

l Resi

PD - 95842

IRF6612/IRF6612TR1

HEXFET® Power MOSFET

l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount

V

30V

DSS

R

DS(on)

3.3mΩ

4.4mΩ

max

VGS = 10V

VGS = 4.5V

Qg(typ.)

30nC

Techniques

DirectFET ISOMETRIC

Applicable DirectFET Package/Layout Pad (see p.8,9 for details)

SQ SX ST MQ

MX

MT

MX

Description

The IRF6612 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6612 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6612 has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity to minimize losses in the synchronous FET socke

t.

ute Maximum Ratings

Parameter Units

V

DS

V

GS

@ TC = 25°C

I

D

@ TA = 25°C

I

D

@ TA = 70°C

I

D

I

DM

PD @TA = 25°C Power Dissi pation PD @TA = 70°C

@TC = 25°C Power Dissipation

P

D

T

J

T

STG

erma

Drain-to-Sour ce Voltage Gate-to-Source Volt age Conti n uous Drai n Cur r e nt, V Conti n uous Drai n Cur r e nt, V Conti n uous Drai n Cur r e nt, V Pulsed Drain Current

Power Dissipation

Linear D er ating Factor Operating Junction and Stor ag e Temperat ur e Ra ng e

c g g

stance

Parameter Typ. Max. Units

R

θJA

R

θJA

R

θJA

R

θJC

R

θJ-PCB

Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB M ou nted 1.0 –––

fj gj hj

ij

Notes  through  are on page 10

@ 10V

GS

@ 10V

GS

@ 10V

GS

––– 45

12.5 –––

––– 1.4

Max.

30

±20

136

24 19

190

2.8

1.8 89

0.022

-40 to + 150

20 ––– °C/W

V

A

W

W/°C

°C

www.irf.com 1

02/02/04

IRF6612/IRF6612TR1

Static @ TJ = 25°C (unless o therwi se specified)

Parameter Min. Typ. Max. Units

BV

DSS

∆Β

V

DSS

R

DS(on)

V

GS(th)

∆

V

GS(th)

I

DSS

I

GSS

gfs Forwa rd Tr a nsconductanc e 96 – –– ––– S Q

g

Q

gs1

Q

gs2

Q

gd

Q

godr

Q

sw

Q

oss

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Avalanche Characteristics

E

AS

I

AR

Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

/∆T

Drain-t o-Source Breakdown Voltage 30 ––– ––– V Breakdown Vol t age Temp. Co ef f icient ––– 24 ––– mV/°C

J

Static Drai n-to-Sou rce On-Res istance ––– 2.5 3.3

––– 3.4 4.4 Gate Threshold Voltage 1.35 ––– 2.25 V Gate Threshold Voltage Coeffici ent ––– -5.6 ––– mV/°C

J

Drain-t o-Source Leakage Cu rrent ––– ––– 1.0 µA

––– ––– 100 Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reve rse Leakage ––– ––– -100

Total Gat e Charge ––– 30 45 Pre-Vth Gate-to-Source Char ge ––– 8.5 –– – Post-Vth Gate-to-Source Charge ––– 2.9 ––– nC Gate -t o - D rain Charge ––– 10 ––– Gate Charge Overdrive ––– 8.6 ––– Switch Charge (Q

gs2

+ Qgd)

––– 13 ––– Output Charge ––– 18 ––– nC Turn- On D el ay Time ––– 15 ––– Rise Time ––– 52 ––– Turn-O ff Delay Ti m e ––– 21 ––– ns Fall Time ––– 4.8 ––– Input Capacitance ––– 3970 ––– Output Capacitance ––– 780 ––– pF Reverse Transfer Cap acitance ––– 360 –––

Parameter Units

Single Pulse Avalanche En er gy Avalanche Current

c

d

Typ.

––– –––

Parameter Min. Typ. Max. Units

Conti n uous Source Curren t ––– ––– 24 (Body Diode) A Pulsed Source Curren t ––– ––– 190 (Body Diode) Diode Forward Voltage ––– ––– 1.0 V Reverse Reco very Time ––– 19 29 ns Reverse Recovery Charge ––– 8.1 12 nC

c

Conditions

VGS = 0V, ID = 250µA Referen c e to 25° C, I V

mΩ

= 10V, ID = 24A

GS

VGS = 4.5V, ID = 19A VDS = VGS, ID = 250µA

V

= 24V, VGS = 0V

DS

= 24V, VGS = 0V, TJ = 125°C

V

DS

V

= 20V

GS

V

= -20V

GS

= 15V, ID = 19A

V

DS

VDS = 15V

= 4.5V

V

GS

I

= 19A

D

= 16V, VGS = 0V

V

DS

V

= 16V, VGS = 4.5V

DD

= 19A

I

D

Clampe d I n ductiv e Load

V

= 0V

GS

= 15V

V

DS

ƒ = 1.0MHz

Max.

37 19

Conditions

MOSFET symbol showing the integral reverse p-n junct ion diode. TJ = 25°C, IS = 19A, VGS = 0V T

= 25°C, IF = 19A

J

di/dt = 100A/µs

e

= 1mA

D

e

e

G

mJ

A

D

S

e

2 www.irf.com

IRF6612/IRF6612TR1

10000

VGS

7.0V

4.5V

4.0V

3.5V

3.2V

2.9V

2.7V

60µs PULSE WIDTH

≤

Tj = 25°C

) A

(

t

n

e

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

D

I

TOP 10V

1000

BOTTOM 2.7V

100

10

1

0.1 1 10 VDS, Drain-to-Source Voltage (V )

Fig 1. Typical Output Characteristics

1000

) A

(

t

n

e

r

100

r

u C e

c

r

u

o S

-

o

t

-

10

n

i

a

r D

,

D

I

TOP 10V

BOTTOM 2.7V

VGS

7.0V

4.5V

4.0V

3.5V

3.2V

2.9V

2.7V

60µs PULSE WIDTH

≤

Tj = 150°C

1

0.1 1 10 VDS, Drain-to-Source Voltage (V )

Fig 2. Typical Output Characteristics

1000

V

= 10V

DS

≤

)

Α

(

100

t

n

e

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

D

I

60µs PULSE WIDTH

10

1

TJ = 150°C

TJ = 25°C

0.1 0 1 2 3 4 5

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

1.5

e

c

n

a

t

s

i

s

e R n O e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

)

n

o

( S D

R

ID = 25A V

= 10V

GS

)

d

e

z

i

l

1.0

a m

r

o N

(

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance

vs. Temperature

www.irf.com 3

IRF6612/IRF6612TR1

100000

) F

10000

p

(

e

c

n

a

t

i

c

a

p

a C

,

1000

C

100

V

= 0V, f = 1 MHZ

GS

C

= C

+ Cgd, C

gs

gd

+ C

ds

gd

iss

C

rss

C

oss

C

iss

C

oss

C

rss

1 10 100

VDS, Drain-to-Source Voltage (V )

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

SHORTED

6.0 ID= 19A

)

5.0

V

( e

g

a

t

l

4.0

o V

e

c

r

u

3.0

o S

-

o

t

-

e

t

2.0

a G

,

S G

1.0

V

0.0

0 10203040

Q

VDS= 24V VDS= 15V

Total G ate Charge (nC)

G

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

1000.00

) A

(

t

n

e

r

100.00

u C n

i

a

r D e

s

r

e

v

10.00

e R

,

D S

I

1.00

TJ = 150°C

TJ = 25°C

V

= 0V

GS

0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

1000

OPERATION IN THIS AREA

) A

(

t

100

n

e

r

u C e

c

r

u

10

o S

-

o

t

-

n

i

a

r D

1

,

TA = 25°C

D

I

Tj = 150°C Single Pulse

0.1 0 1 10 100 1000

LIMITED BY RDS(on)

100µsec

1msec

10msec

VDS, Drain-to-Source Voltage (V )

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRF6612/IRF6612TR1

τ

140

120

)

100

A

(

t

n

e

r

80

r

u C n

i

60

a

r D ,

D

40

I

20

0

25 50 75 100 125 150

TC , Case Temper ature (°C)

Fig 9. Maximum Drain Current vs.

Case Temperature

2.5

) V

(

2.0

e

g

a

t

l

o V

d

l

1.5

o

h

s

e

r

h

t

1.0

e

t

a G

)

h

t

(

0.5

S G

V

0.0

-75 -50 -25 0 25 50 75 100 125 150

ID = 250µA

TJ , Temperature ( °C )

Fig 10. Threshold Voltage vs. Temperature

100

D = 0.50

)

10

A

J

h

t

Z

(

1

e

s

n

o

p

s

e

0.1

R

l

a m

r

e

h T

0.01

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THER M A L R ESPO N SE )

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

R

1

2

R

1

τ

2

τ

3

R

2

3

τ

3

τ

2

3

Ri (°C/W) τi (sec)

4

R

4

1.2801 0.000322

τ

C

τ

8.7256 0.164798

4

τ

4

21.750 2.25760

13.251 69

Notes:

1. Du t y Fact o r D = t1/t2

2. Peak Tj = P dm x Zthja + Tc

0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100

t1 , Rectangular Pulse Dur ation (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com 5

IRF6612/IRF6612TR1

)

10

Ω

m

(

9

e

c

n

8

a

t

s

i

s

7

e R n

6

O e

c

r

5

u

o S

4

o

t

-

n

3

i

a

r

D

2

,

)

n

o

1

( S D

0

R

TJ = 25°C

ID = 24A

TJ = 125°C

2 3 4 5 6 7 8 9 10

V

Gate -to - Source Volt age (V)

GS,

Fig 12. On-Resistance vs. Gate Voltage

15V

V

R

G

20V

VGS

L

DS

D.U.T

I

AS

Ω

0.01

t

p

DRIVER

+

V

DD

-

A

I

AS

t

150

)

J m

( y

125

g

r

e

n E

e

100

h

c

n

a

l

a

v

75

A e

s

l

u P

50

e

l

g

n

i S

25

,

S A

E

0

25 50 75 100 125 150

TOP 5.3A

BOTTOM19A

I

D

6.2A

Starting TJ , Junction Temperature (°C)

Fig 13. Maximum Avalanche Energy

vs. Drain Current

Current Regulator

V

(BR)DSS

p

Same Type as D.U.T.

.2µF

12V

V

GS

50KΩ

3mA

.3µF

D.U.T.

+

V

DS

-

I

G

D

Fig 14. Unclamped Inductive Test Circuit

I

Current Sampling Resistors

and Waveform

Fig 15. Gate Charge Test Circuit

L

D.U.T

D

V

DS

+

-

V

DD

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 17. Switching Time Waveforms

V

DS

V

GS

Pulse Width < 1µs

Duty Factor < 0.1%

Fig 16. Switching Time Test Circuit

6 www.irf.com

IRF6612/IRF6612TR1





Reverse Recovery Current

Driver Gate Drive

P.W.

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance

Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied Voltage

+

-

Period

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P.W.

Period

VGS=10V

V

DD

I

SD

*

Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

Id

Vds

Vgs

Vgs(th)

Qgs1

Qgs2 Qgd Qgodr

Fig 16. Gate Charge Waveform

www.irf.com 7

IRF6612/IRF6612TR1

DirectFET Outline Dimension, MX Outline (Medium Size Can, X-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.

DIMENSIONS

IMPERIAL

MIN

0.246

0.189

0.152

0.014

0.027

0.054

0.032

0.015

0.035

0.090

0.023

0.001

MAX

0.250

0.201

0.156

0.018

0.028

0.056

0.033

0.017

0.039

0.095

0.028

0.003

Note: Controlling dimensions are in mm

CODE A B C D E F G H J K L M N

METRIC

MIN

6.25

4.80

3.85

0.35

0.68

1.38

0.80

0.38

0.88

2.28

0.59

0.03

MAX

6.35

5.05

3.95

0.45

0.72

1.42

0.84

0.42

1.01

2.41

0.70

0.08

8 www.irf.com

IRF6612/IRF6612TR1

DirectFET Board Footprint, MX Outline (Medium Size Can, X-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

DirectFET Tape & Reel Dimension (Showing component orientation).

NOTE: Controlling di m ensions in mm Std reel quantit y i s 4800 parts. (ordered as IRF6618). For 1000 parts on 7" reel, order IRF6618TR1

STANDARD OPTION (QTY 4800)

METRIC

MIN

CODE A

330.0

B

20.2

C

12.8

D

1.5

E

100.0

F

N.C

G

12.4

H

11.9

MAX N.C N.C

13.2 N.C N.C

18.4

14.4

15.4

REEL DIMENSIONS

IMPERIAL

MIN

MAX

12.992

N.C

0.795

N.C

0.504

0.520

0.059

N.C

3.937

N.C

0.724

0.488

0.567

0.469

0.606

TR1 OPTION (QTY 1000)

METRIC IMPERIAL

MIN

MAX

177.77

N.C

19.06

N.C

13.5

12.8

1.5

N.C

58.72

N.C

13.50

11.9

12.01

11.9

12.01

MIN

6.9

0.75

0.53

0.059

2.31 N.C

0.47

MAX N.C N.C

0.50 N.C N.C

0.53 N.C N.C

www.irf.com 9

IRF6612/IRF6612TR1

DirectFET Part Marking

Notes:



Repetitive rating; pulse width limited by

max. junction temperature.

 Starting T

RG = 25Ω, I

= 25°C, L = 0.20mH,

J

= 19A.

AS

 Pulse width ≤ 400µs; duty cycle ≤ 2%.  Surface mounted on 1 in. square Cu board.

 Used double sided cooling , mounting pad.  Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

 T

measured with thermal couple mounted to top (Drain) of

C

part.

 R

is measured at T

θ

of approximately 90°C.

J

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.02/04

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