Page 1
PROVISIONAL
PD - 94365
IRF6604
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount
DirectFET
V
DSS
30V 11.5mΩ@VGS = 7.0V 16A
13mΩ@VGS = 4.5V 14A
R
DS(on)
TM
Power MOSFET
max I
D
Techniques
DirectFET™ ISOMETRIC
Description
The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging
to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm
profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly
equipment and vapor phase, infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6604 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6604 has been optimized for parameters that are
critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 59
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 15
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 12.5 A
I
DM
PD @TA = 25°C Power Dissipation 5.0
PD @TA = 70°C Power Dissipation 3.2
V
GS
T
J, TSTG
Drain- Source Voltage 30 V
Pulsed Drain Current 130
W
Linear Derating Factor 40 mW/°C
Gate-to-Source Voltage ±12 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient ––– 25
Junction-to-Ambient ––– 12.5
Junction-to-Ambient ––– 20 °C/W
Junction-to-Case ––– 3.0
Junction-to-PCB mounted ––– 1.0
www.irf.com 1
01/15/02
Page 2
IRF6604
PROVISIONAL
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage 30 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.02 ––– V/°C Reference to 25°C, ID = 1mA
––– 9.0 11.5 VGS = 7.0V, ID = 16A
––– 10 13 VGS = 4.5V, ID = 14A
mΩ
Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 30
––– ––– 150 VDS = 24V, VGS = 0V, TJ = 100°C
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100
µA
nA
V
= 24V, VGS = 0V
DS
= 12 V
GS
V
= -12 V
GS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
Q
Q
Q
Q
Q
Q
R
t
d(on)
t
r
t
d(off)
t
f
C
C
C
fs
g
g
gs1
gs2
gd
oss
g
iss
oss
rss
Forward Transconductance TBA ––– ––– SVDS = 16V, ID = 15A
Total Gate Charge Cont FET ––– 20 30 VGS = 5.0V, VDS = 16V, ID = 15A
Total Gate Charge Sync FET ––– 17 ––– VGS = 5.0V, VDS < 100mV
Pre-Vth Gate-Source Charge ––– 5.4 ––– VDS = 16V, ID = 15A
Post-Vth Gate-Source Charge ––– 1.4 ––– nC
Gate to Drain Charge ––– 7.0 10
Output Charge ––– 12 ––– VDS = 16V, VGS = 0V
Gate Resistance ––– 2.0 ––– Ω
Turn-On Delay Time ––– TBA ––– VDD = 16V
Rise Time ––– TBA ––– ns ID = 15A
Turn-Off Delay Time ––– TBA ––– VGS = 5.0V
Fall Time ––– TBA ––– Clamped Inductive Load
Input Capacitance ––– TBA ––– VGS = 0V
Output Capacitance ––– TBA ––– pF VDS = 16V
Reverse Transfer Capacitance ––– TBA ––– ƒ = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 164 mJ
Avalanche Current ––– TBA A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Q
rr(s)
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
––– ––– 1.2 V TJ = 25°C, IS = 15A, VGS = 0V
––– TBA ––– TJ = 125°C, IS = 15A, VGS = 0V
15
130
showing the
A
p-n junction diode.
G
Reverse Recovery Time ––– TBA TBA ns TJ = 25°C, IF = 15A, VR= 16V
Reverse Recovery Charge ––– 41 50 nC di/dt = 700A/µs
Reverse Recovery Charge ––– TBA TBA nC di/dt = 100A/µs
(with Parallel Schottky) VDS = 16V, VGS = 0V, IS = 15A
2 www.irf.com
D
S
Page 3
DirectFET™ Pad Layout
PROVISIONAL
IRF6604
www.irf.com 3
Page 4
IRF6604
PROVISIONAL
DirectFET™ Outline Dimension
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board
Used double sided cooling, mounting pad
This product has been designed and qualified for the Consumer market.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
Mounted on minimum footprint full size board with
metalized back and with small clip heatsink
TC measured with thermal couple mounted to top
(Drain) of part.
Data and specifications subject to change without notice.
Qualification Standards can be found on IR’s Web site.
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/02
4 www.irf.com
Loading...