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PD - 94363A
IRF6602
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount
DirectFET
V
DSS
20V 13mΩ@VGS = 10V 11A
19mΩ@VGS = 4.5V 8.8A
R
DS(on)
TM
Power MOSFET
max I
D
Techniques
DirectFET™ ISOMETRIC
Description
The IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging
to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm
profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly
equipment and vapor phase, infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6602 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power
the latest generation of processors operating at higher frequencies. The IRF6602 has been optimized for parameters that
are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V 11
ID @ TC = 70°C Continuous Drain Current, VGS @ 4.5V 8.8 A
I
DM
PD @TC = 25°C Power Dissipation 2.3
PD @TC = 70°C Power Dissipation 1.5
V
GS
T
J, TSTG
Drain- Source Voltage 20 V
Pulsed Drain Current 88
W
Linear Derating Factor 18 mW/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient ––– 55
Junction-to-Ambient 12.5 –––
Junction-to-Ambient 20 ––– °C/W
Junction-to-Case 3.0 –––
Junction-to-PCB mounted 1.0 –––
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IRF6602
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
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Drain-to-Source Breakdown Voltage 20 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
––– 10 13 VGS = 10V, ID = 11A
––– 14 19 VGS = 4.5V, ID = 8.8A
mΩ
Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 125 VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 16V, VGS = 0V
µA
= 20V
GS
nA
V
= -20V
GS
Forward Transconductance 20 ––– ––– SVDS = 10V, ID = 8.8A
Total Gate Charge Cont FET ––– 13 20 VGS = 5.0V, VDS = 10V, ID = 8.8A
Total Gate Charge Sync FET ––– 11 ––– VGS = 5.0V, VDS < 100mV
Pre-Vth Gate-Source Charge ––– 3.5 ––– VDS = 16V, ID = 8.8A
Post-Vth Gate-Source Charge ––– 1.3 ––– nC
Gate to Drain Charge ––– 4.8 –––
Switch Charge (Q
+ Qgd) ––– 6.1 –––
gs2
Output Charge ––– 19 ––– VDS = 16V, VGS = 0V
Turn-On Delay Time ––– 11 ––– VDD = 15V
Rise Time ––– 58 ––– ID = 8.8A
Turn-Off Delay Time ––– 15 ––– RG = 1.8Ω
ns
Fall Time ––– 5.5 ––– VGS = 4.5V
Input Capacitance ––– 1420 ––– VGS = 0V
Output Capacitance ––– 960 ––– VDS = 10V
Reverse Transfer Capacitance ––– 100 ––– pF ƒ = 1.0MHz
Single Pulse Avalanche Energy ––– 97 mJ
Avalanche Current ––– 8.8 A
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
––– 0.83 1.2 V TJ = 25°C, IS = 8.8A, VGS = 0V
––– 0.65 ––– TJ = 125°C, IS = 8.8A, VGS = 0V
11
88
showing the
A
p-n junction diode.
Reverse Recovery Time ––– 42 62 ns TJ = 25°C, IF = 8.8A, VR=15V
Reverse Recovery Charge ––– 51 77 nC di/dt = 100A/µs
Reverse Recovery Time ––– 43 64 ns TJ = 125°C, IF = 8.8A, VR=15V
Reverse Recovery Charge ––– 55 82 nC di/dt = 100A/µs
G
D
S
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IRF6602
(
)
1000
100
10
, Drain-to-Source Current (A)
D
I
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
2.7V
20µs PULSE WIDTH
1
0.1 1 10 100
Tj = 25°C
VDS, Drain-to-Source Voltage (V)
100.00
)
(Α
TJ = 150°C
1000
100
10
, Drain-to-Source Current (A)
D
I
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
2.7V
20µs PULSE WIDTH
Tj = 150°C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
1.5
11A
I =
D
TJ = 25°C
10.00
, Drain-to-Source Current
D
I
1.00
2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
= 15V
DS
20µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
C
Vs. Temperature
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IRF6602
)
)
100000
10000
1000
C, Capacitance(pF)
100
10
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
iss
gs
C
= C
rss
gd
C
= C
ds
+ C
oss
Ciss
Coss
Crss
+ Cgd, C
gd
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
°
T = 150 C
10
J
SHORTED
ds
6
I
=
8.8A
D
5
4
2
1
GS
V , Gate-to-Source Voltage (V)
0
0 4 8 12 16
Q , Total Gate Charge (nC
G
V = 16V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
10
100µsec
°
T = 25 C
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V ,Source-to-Drain Voltage (V
SD
J
V = 0 V
Fig 7. Typical Source-Drain Diode
1
, Drain-to-Source Current (A)
D
Tc = 25°C
I
Tj = 150°C
GS
Single Pulse
0.1
0 1 10 100
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
1msec
10msec
Forward Voltage
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IRF6602
0
12
9
6
D
I , Drain Current (A)
3
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
100
R
V
DS
V
GS
R
G
D
D.U.T.
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
D = 0.50
thJA
Thermal Response (Z )
0.20
10
0.10
0.05
P
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 10
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJA A
DM
t
1 2
1
t
2
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF6602
(BR)
A
)
)
20
Ω
15
V
= 4.5V
GS
V
10
GS
= 10V
, Drain-to-Source On Resistance (m
DS (on)
5
R
0 20406080100
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
.2µF
12V
V
GS
50KΩ
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
V
GS
+
V
DS
-
I
D
V
G
QGSQ
Q
G
GD
Charge
)
1150
Ω
950
750
550
350
, Drain-to -Source On Resistance (m
150
DS(on)
-50
R
2.0 4.0 6.0 8.0 10.0
V
GS,
ID = 11A
Gate -to -Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
250
TOP
200
BOTTOM
I
D
3.9A
7.0A
8.8A
Fig 13a&b. Basic Gate Charge Test Circuit
150
and Waveform
100
15V
V
t
p
I
AS
DSS
V
R
G
20V
L
DS
D.U.T
I
AS
Ω
0.01
t
p
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
DRIVER
+
V
DD
-
50
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting Tj, Junction Temperature( C
°
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
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DirectFET™ Outline Dimension
IRF6602
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Page 8
IRF6602
DirectFET™ PCB Footprint
DirectFET™
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Tape and Reel Dimension
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DirectFET™ Part Marking
IRF6602
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board.
Used double sided cooling, mounting pad.
Mounted on minimum footprint full size board with metalized back and with small clip heatsink.
TC measured with thermal couple mounted to top (Drain) of part.
Starting TJ = 25°C, L = 2.5mH, RG = 25Ω, I
This product has been designed and qualified for the Consumer market.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
= 8.8A. (See Figure 14)
AS
Data and specifications subject to change without notice.
Qualification Standards can be found on IR’s Web site.
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/02
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