Datasheet IRF646 Datasheet (Intersil)

IRF646

Data Sheet June 1999

14A, 275V, 0.280 Ohm, N-Channel Power
MOSFET

This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy inthe breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA17423.

Ordering Information

P AR T NUMBER P ACKAGE BRAND

IRF646 TO-220AB IRF646

NOTE: When ordering, use the entire part number.

File Number

Features

• 14A, 275V

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• 275VDC Rating-120VAC Line System Operation

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.280Ω

DS(ON)

Components to PC Boards”

Symbol

D

2169.3

Packaging

G

S

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

4-214

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF646

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF646 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

D
D

DM

GS

D

275 V
275 V

14

8.8
56 A

±20 V
125 W

A
A

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

550 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)VDS

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)VDD

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= 250µA, VGS = 0V (Figure 10) 275 - - V

= VDS, ID = 250µA2-4V
VDS = Rated BV
VDS = 0.8 x Rated BV

> I

D(ON)

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 125oC - - 250 µA

DSS

x r

DS(ON)MAX

, VGS = 10V (Figure 7) 14 - - A

VGS = ±20V - - ±100 nA

= 8A, VGS = 10V (Figures 8, 9) - 0.200 0.280 Ω

VDS≥ 50V, ID = 8A (Figure 12) 6.7 10 - S

= 125V, ID≈ 14A, RGS = 9.1Ω, RL = 8.6Ω,
MOSFET Switching Times are Essentially
Independent of Operating Temperature

-1624ns

- 67 100 ns

-5380ns

-4974ns

= 10V, ID = 14A, VDS = 0.8 x Rated BV
I

= 1.5mA, (Figure 14) Gate Charge is

G(REF)

DSS,

Essentially Independent of Operating Temperature

-3959nC

- 6.6 - nC

-20-nC

VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) - 1300 - pF

- 320 - pF

-69-pF

Measuredfromthe Contact
Screw on Tab to Center of
Die

Measured from the Drain
Lead, 6mm (0.25in) from
Package to Center of Die

Measured from the Source
Lead, 6mm (0.25in) from
Header to Source Bonding
Pad

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

- 4.5 - nH

- 7.5 - nH

- 7.5 - nH

--1oC/W

Free Air Operation - - 80

o

C/W

4-215

IRF646

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

SD

I

SDM

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovery Charge Q

NOTES:

2. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%.

3. Repetitive rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 50V, starting TJ= 25oC, L = 4.5mH, RG= 25Ω,peak IAS = 14A.

ModifiedMOSFET Symbol
Showing the Integral
Reverse P-N Junction

D

- - 14 A

- - 56 A

Diode

G

S

TJ = 25oC, ISD = 14A, VGS = 0V (Figure 13) - - 1.8 V

SD

TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs 150 300 640 ns

rr

TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs 1.6 3.4 7.2 µC

RR

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

T

, CASE TEMPERATURE (oC)

C

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

1

0.5

0.1

0.2

0.1

0.05

0.02

0.01

-5

10

SINGLE PULSE

-4

10

C/W)

o

0.01

, NORMALIZED TRANSIENT

θJC

THERMAL IMPEDANCE (

Z

0.001

15

12

9

6

, DRAIN CURRENT (A)

D

I

3

0

25 50 75 100 125

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

-3

10

t1, RECTANGULAR PULSE DURATION (s)

-2

10

TC, CASE TEMPERATURE (oC)

CASE TEMPERATURE

NOTES:
DUTY FACTOR: D = t

TJ = PDM x Z

-1

10

150

P

DM

t

1

t

2

1/t2

x R

θJC

+ T

C

10

θJC

1

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

4-216

IRF646

Typical Performance Curves

1000

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

100

10

1

0.1
1

DS(ON)

TC = 25oC
TJ = MAX RATED
SINGLE PULSE

10

VDS, DRAIN TO SOURCE VOLTAGE (V)

Unless Otherwise Specified (Continued)

10µs

100µs

1ms

10ms

DC

100 1000

, DRAIN CURRENT (A)

D

I

25

10V

20

15

10

5

0

0 25 50 75 100

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

25

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

20

15

= 10V

V

GS

VGS = 6V

VGS = 5.5V

100

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

≥ 50V

V

DS

10

6V

5.5V

5V

4.5V
4V

125

10

, DRAIN CURRENT (A)

D

I

5

0

0

2
VDS, DRAIN TO SOURCE VOLTAGE (V)

V

= 5V

GS

VGS = 4V

4

6108

V

GS

= 4.5V

1

, DRAIN CURRENT (A)

D

I

0.1
0 468102

150oC

VGS, GATE TO SOURCE VOLTAGE (V)

25oC

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

2.5

2.0

1.5

1.0

, DRAIN TO SOURCE

ON RESISTANCE (Ω)

0.5

DS(ON)

r

0

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

0

15

ID, DRAIN CURRENT (A)

30

VGS = 10V

45 60

= 20V

V

GS

75

3.0

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 10V, ID = 14A

V

GS

2.4

1.8

1.2

ON RESISTANCE

0.6

NORMALIZED DRAIN TO SOURCE

0

-60 -40 -20 0 20 40 60

, JUNCTION TEMPERATURE (oC)

T

J

80

100

120 140 160

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

4-217

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

IRF646

Typical Performance Curves

1.25
ID = 250µA

1.15

1.05

0.95

BREAKDOWN VOLTAGE

0.85

NORMALIZED DRAIN TO SOURCE

0.75

-60 -40 -20 0 20 40 60
, JUNCTION TEMPERATURE (oC)

T

J

Unless Otherwise Specified (Continued)

80

100 120 140 160

FIGURE 10. NORMALIZED DRAIN TOSOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

15

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

≥ 50V

V

DS

12

9

25oC

150oC

3000

2400

1800

1200

C, CAPACITANCE (pF)

600

0

0

VGS= 0V, f = 1MHz

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

10

C

= CGS + C

ISS

C

= C

RSS

C

≈ C

OSS

C

ISS

C

OSS

C

RSS

GD

DS

+ C

GD

GD

100

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

100

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

10

6

, TRANSCONDUCTANCE (S)

3

fs

g

0

0 5 10 15 20

I

, DRAIN CURRENT (A)

D

1

, SOURCE TO DRAIN CURRENT (A)

SD

I

25

0.1

150oC

0

VSD, SOURCE TO DRAIN VOLTAGE (V)

25oC

0.8 1.2 1.6 2.00.4

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE

20

ID = 14A

16

12

8

, GATE TO SOURCE (V)

GS

4

V

0

012243648

, GATE CHARGE (nC)

Q

g

VDS = 125V

VDS = 50V

VDS = 200V

60

4-218

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

IRF646

Test Circuits and Waveforms

V

DS

BV

DSS

L

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

AS

R

G

+

V

DD

-

DUT

0V

P

I

AS

0.01Ω

0

t

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

t

P

I

AS

t

AV

V

DS

V

DD

t

ON

t

d(ON)

t

R

L

+

V

R

G

DD

-

V

DS

90%

0

r

10%

DUT

V

GS

V

GS

10%

0

50%

PULSE WIDTH

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

V

DS

12V

BATTERY

0

0.2µF

50kΩ

I

G(REF)

CURRENT

REGULATOR

0.3µF

G

IG CURRENT

SAMPLING

RESISTOR RESISTOR

SAME TYPE
AS DUT

D

DUT

S

CURRENT

I

D

SAMPLING

(ISOLATED
SUPPLY)

V

DS

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

DS

0

I

G(REF)

0

t

d(OFF)

90%

V

GS

t

OFF

50%

t

f

10%

90%

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

4-219

IRF646

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