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IRF634
IRF634FP
N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP
MESH OVERLAY™ MOSFET
TYPE V
IRF634
IRF634FP
■ TYPICAL R
■ EXTREMELY HIGH dv /d t C APABILITY
■ 100% AVALANCHE TESTED
DS
DSS
250 V
250 V
(on) = 0.38 Ω
R
DS(on)
< 0.45 Ω
< 0.45 Ω
I
D
8 A
8 A
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding
performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLI ES ( SMPS)
■ DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
■ IDEAL FOR MONITOR’s B+ FUNCTION
3
2
1
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
IRF634 IRF634FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 5 V/ns
V
ISO
T
stg
T
j
(•)Pu l se width limited by safe operating area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
250 V
250 V
Gate- source Voltage ± 20 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 32 32(*) A
Total Dissipation at TC = 25°C
8 8(*) A
5 5(*) A
80 30 W
Derating Factor 0.64 0.24 W/°C
Insulation Withstand Voltage (DC) - 2000 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(1) ISD≤ 8A, di/dt≤300 A/µs, VDD≤ V
(*)Limit ed only by max i mum tempe rat ure allowed
(BR)DSS
, Tj≤ T
jMAX
1/9July 2001
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IRF634/IRF634FP
THERMA L D ATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.56 4.11 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID = IAR, VDD = 50 V)
j
ID = 250 µA, VGS = 0 250 V
8A
300 mJ
Breakdown Voltage
= Max Rating
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
V
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±20V ±100 nA
GS
1µA
10 µA
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS, ID = 250µA
DS
VGS = 10V, ID = 4 A
234V
0.38 0.45 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 118 pF
Reverse Transfer
Capacitance
ID=4A
V
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
78 S
770 pF
48 pF
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IRF634/IRF634FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 18 ns
Total Gate Charge
Gate-Source Charge 5.2 nC
Gate-Drain Charge 14.8 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(Voff)
t
r(Voff)
t
t
f
t
f
c
Turn-off- Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.
2. Pulse width li mited by safe operating ar ea.
Source-drain Current 8 A
(2)
Source-drain Current (pulsed) 32 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 1.1 µC
Reverse Recovery Current 11.3 A
= 125 V, ID = 4 A
DD
RG= 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
V
= 200V, ID = 8 A,
DD
VGS = 10V
VDD = 125V, ID = 4 A,
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 3)
V
= 200V, ID = 8 A,
clamp
R
=4.7Ω, V
G
GS
= 10V
(see test circuit, Figure 5)
ISD = 8 A, VGS = 0
I
= 8 A, di/dt = 100A/µs
SD
VDD = 30V, Tj = 150°C
(see test circuit, Figure 5)
13 ns
37 51.8 nC
51
16
12.5
12.5
28
1.7 V
198 ns
ns
ns
ns
ns
ns
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
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IRF634/IRF634FP
Therma l Impedence f or TO-2 20
Output Characteristics Transfer Characteristics
Thermal Impedence for TO-220F P
4/9
Static Drain-source On ResistanceTransconductance
Page 5
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
IRF634/IRF634FP
Source-drain Diode Forward Characteristics
5/9
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IRF634/IRF634FP
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
6/9
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E
TO-220 MECHANICAL DATA
IRF634/IRF634FP
DIM.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A
C
D
L5
Dia.
L7
D1
L6
L2
L9
F1
G1
F
H2
G
F2
L4
P011C
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IRF634/IRF634FP
TO-220FP MECHANICAL DATA
DIM.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
E
A
D
B
8/9
L3
L6
L7
F1
F
G1
H
F2
123
L4
L2
L5
G
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IRF634/IRF634FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such informa tion n or for an y infring ement of patent s or other rig hts of third part ies which may resu lt from its use . No l i cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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The ST logo is a trademark of STMicroelectronics
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STMicroelectronics GROUP OF COMPANIES
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