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IRF630M
IRF630MFP
N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP
MESH OVERLAY™ MOSFET
TYPE V
DSS
R
DS(on)
I
D
IRF630M 200 V < 0.40 Ω 9 A
IRF630FPM 200 V < 0.40 Ω 9 A
■ TYPICAL R
■ EXTREMELY HIGH dv /d t C APABILITY
■ VERY LOW INTRINSIC C APACITANCES
■ GATE CHARGE MINIMIZED
(on) = 0.35 Ω
DS
DESCRIPTION
This power MOSFET is designed using the c om pa-
ny’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and
improves the performances compared with standard
parts from various sou rce s.
Isolated TO-220 option simplifies assembly and cuts
risk of accidental short circuit in crowded monitor
PCB’s.
.APPLICATIONS
■ MONITOR DISPLAYS
■ GENERAL PURPOSE SWITCH
3
2
1
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
IRF630M IRF630MFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 5 5 V/ns
V
ISO
T
stg
T
j
(•)Pu l se width limite d by safe operat i ng area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
200 V
200 V
Gate- source Voltage ± 20 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 36 36 A
Total Dissipation at TC = 25°C
9 9 (**) A
5.7 5.7 (**) A
75 30 W
Derating Factor 0.6 0.24 W/°C
Insulation Winthstand Voltage (DC) -- 2500 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(1)ISD ≤9A, di/dt ≤300A/µs, VDD ≤ V
(**) Limit ed only by Maxi m um T em perature All owed
(BR)DSS
, Tj ≤ T
JMAX.
1/9October 2001
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IRF630M / FP
THERMA L D ATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.67 4.17 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Maximum Lead Temperature For Soldering Purpose 300 °C
Drain-source
ID = 250 µA, VGS = 0 200 V
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ± 20V ±100 nA
GS
V
= VGS, ID = 250µA
DS
VGS = 10V, ID = 4.5 A
234V
0.35 0.40 Ω
1µA
50 µA
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 90 120 pF
Reverse Transfer
Capacitance
ID= 4.5 A
V
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
34 S
540 700 pF
35 50 pF
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IRF630M / FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 15 20 ns
Total Gate Charge
Gate-Source Charge 7.5 nC
Gate-Drain Charge 9 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 12 17 ns
Cross-over Time 25 35 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.
2. Pulse width li mited by safe operating area.
Source-drain Current 9 A
(2)
Source-drain Current (pulsed) 36 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 0.95 µC
Reverse Recovery Current 11 A
= 100 V, ID = 4.5 A
DD
RG= 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
V
= 160V, ID = 9 A,
DD
VGS = 10V
V
= 160V, ID = 9 A,
DD
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
ISD = 9 A, VGS = 0
I
= 9 A, di/dt = 100A/µs
SD
VDD = 50 V, Tj = 150°C
(see test circuit, Figure 5)
10 14 ns
31 45 nC
12 17 ns
1.5 V
170 ns
Safe Operating Area for TO-220FPSafe Operating Area for TO-220
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IRF630M / FP
Thermal Impedence for TO-220
Output Characteristics
Thermal Impedence for TO-220FP
Transfer Characteristics
4/9
Static Drain-source On ResistanceTransconductance
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IRF630M / FP
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Volta ge vs Temp.
Capacitance Variations
Normalized On Resistance vs Temperatur e
Source-drain Diode Forward Characteristics
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IRF630M / FP
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
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E
TO-220 MECHANICAL DATA
IRF630M / FP
DIM.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A
C
D
L5
Dia.
L7
D1
L6
L2
L9
F1
G1
F
H2
G
F2
L4
P011C
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IRF630M / FP
TO-220FP MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
E
A
D
8/9
B
L3
L6
L7
¯
F1
F
G1
H
G
F2
123
L2
L4
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IRF630M / FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such informa tion n or for an y infring ement of patent s or other rig hts of third part ies which may resu lt from its use . No l i cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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