Page 1
INCHANGE Semiconductor isc Product Specification
isc N-Channel MOSFET Transistor IRF630B
DESCRIPTION
·Drain Current –ID= 9A@ T
·Drain Source Voltage-
: V
= 200V(Min)
DSS
·Static Drain-Source On-Resistance
: R
= 0.4Ω(Max)
DS(on)
·Fast Switching Speed
APPLICATIONS
·Desinged for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for unin terrupted power supply and motor control applications.
ABSOLUTE MAXIMUM RATINGS(T
=25℃
C
=25℃)
a
SYMBOL
V
DSS
V
GS
I
D
P
D
T
j
T
stg
ARAMETER
Drain-Source Voltage (VGS=0) 200 V
Gate-Source Voltage
Drain Current-continuous@ TC=25℃
Power Dissipation@TC=25℃
Max. Operating Junction T emperature 150
Storage Temperature Range -55~150
VALUE UNIT
±30
9 A
72 W
V
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
R
th j-c
th j-a
Thermal Resistance,Junction to Case 1.74
Thermal Resistance,Junction to Ambient 62.5
℃/W
℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc N-Channel MOSFET Transistor IRF630B
ELECTRICAL CHARACTERISTICS (T =25℃C)
·
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
(BR)DSS
V
GS(th)
R
DS(on)
I
GSS
I
DSS
V
SD
Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 200 V
Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V
Drain-Source On-stage Resistance VGS= 10V; ID= 4.5A 0.4
V
Gate Source Leakage Current
Zero Gate Voltage Drain Current VDS= 200V; VGS= 0 10 uA
Diode Forward Voltage IF= 9A; VGS= 0 1.5 V
= ±30V; VDS= 0
GS
±100
Ω
nA
isc Website：www.iscsemi.cn
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