Datasheet irf6216 Datasheet

PD - 94297

SMPS MOSFET

IRF6216

HEXFET® Power MOSFET

Applications

l Reset Switch for Active Clamp Reset

DC-DC converters

Benefits

l Low Gate to Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C

to Simplify Design (See

OSS

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

Absolute Maximum Ratings

Parameter Max. Units

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -2.2 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V -1.9 A I

DM

PD @TA = 25°C Power Dissipation 2.5 W

V

GS

dv/dt Peak Diode Recovery dv/dt 7.8 V/ns T

J

T

STG

Pulsed Drain Current  -19

Linear Derating Factor 0.02 W/°C Gate-to-Source Voltage ± 20 V

Operating Junction and -55 to + 150 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

V

DSS

-150V 0.240

1

S

2

S

3

S

4

Top View

8

7

6

5

R

DS(on)

ΩΩ

Ω@V

ΩΩ

D D

D

DG

max I

GS

A

D

=-10V -2.2A

SO-8

°C

Thermal Resistance

Symbol Parameter Typ. Max. Units

R

θJL

R

θJA

Junction-to-Drain Lead ––– 20 Junction-to-Ambient  ––– 50 °C/W

Notes  through  are on page 8

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02/12/02

IRF6216

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

g

fs

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff. Effective Output Capacitance ––– 220 ––– VGS = 0V, VDS = 0V to -120V

oss

Drain-to-Source Breakdown Voltage -150 ––– ––– VVGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient

J

––– -0.17 ––– V/°C Reference to 25°C, ID = -1mA  Static Drain-to-Source On-Resistance ––– ––– 0.240 Ω VGS = -10V, ID = -1.3A  Gate Threshold Voltage -3.0 ––– -5.0 V VDS = VGS, ID = -250µA

Drain-to-Source Leakage Current

––– ––– -25 ––– ––– -250 VDS = -120V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage ––– ––– -100 V Gate-to-Source Reverse Leakage ––– ––– 100

VDS = -150V, VGS = 0V

µA

= -20V

GS

nA

V

GS

= 20V

Parameter Min. Typ. Max. Units Conditions Forward Transconductance 2.7 ––– ––– SVDS = -50V, ID = -1.3A Total Gate Charge ––– 33 49 ID = -1.3A Gate-to-Source Charge ––– 7.2 11 nC VDS = -120V Gate-to-Drain ("Miller") Charge ––– 15 23 VGS = -10V, Turn-On Delay Time ––– 18 ––– VDD = -75V Rise Time ––– 15 ––– ID = -1.3A Turn-Off Delay Time ––– 33 ––– RG = 6.5Ω

ns

Fall Time ––– 26 ––– VGS = -10V  Input Capacitance ––– 1280 ––– VGS = 0V Output Capacitance ––– 220 ––– VDS = -25V Reverse Transfer Capacitance ––– 53 ––– pF ƒ = 1.0MHz Output Capacitance ––– 1290 ––– VGS = 0V, VDS = -1.0V, ƒ = 1.0MHz Output Capacitance ––– 99 ––– VGS = 0V, VDS = -120V, ƒ = 1.0MHz

Avalanche Characteristics

Parameter Typ. Max. Units

E

AS

I

AR

Single Pulse Avalanche Energy ––– 200 mJ Avalanche Current ––– -4.0 A

Diode Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode) 

––– –––

-2.2

-19

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -1.3A, VGS = 0V  Reverse Recovery Time ––– 80 120 nS TJ = 25°C, IF = -1.3A Reverse RecoveryCharge ––– 310 460 nC di/dt = -100A/µs



2 www.irf.com

D

S

IRF6216

)

(

)

100

10

1

0.1

0.01

0.1 1 10 100

100

VGS

TOP

-15V

-12V

-10V

-8.0V

-7.0V



BOTTOM

20µs PULSE WIDTH



T = 25 C

J

°

100

10

1

D

-I , Drain-to-Source Current (A)

0.1

0.1 1 10 100

VGS

TOP

-15V

-12V

-10V

-8.0V

-7.0V

-6.0V



-5.5V

BOTTOM

-5.0V

-V , Drain-to-Source Voltage (V

DS

-5.0V

20µs PULSE WIDTH



T = 150 C

J

°

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.5

-2.2A

I =



D

°

T = 25 C



J

10

1

D

-I , Drain-to-Source Current (A)

0.1

5.0 5.5 6.0 6.5 7.0 7.5 8.0

-V , Gate-to-Source Voltage (V

GS

T = 150 C



J

V = -50V

DS



20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

°

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature

J

Fig 4. Normalized On-Resistance

V =

-10V



GS

°

C

Vs. Temperature

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IRF6216

)

10000

1000

V

= 0V, f = 1 MHZ

GS

C

= C

+ Cgd, C

gs

gd

+ C

ds

C C

iss rss oss

Ciss

ds

gd

Coss

100

C, Capacitance(pF)

Crss

10

1 10 100 1000

-VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

SHORTED

12

I

-1.3A

=



D

10

8

6

4

GS

2

-V , Gate-to-Source Voltage (V)

0

0 5 10 15 20 25 30 35

Q , Total Gate Charge (nC

G

V = -120V

DS

V = -75V

DS



V = -30V

DS

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED BY RDS(on)

10

100µsec



°

T = 150 C

J

1msec

1

SD

-I , Reverse Drain Current (A)

J

1

, Drain-to-Source Current (A)

D

Tc = 25°C

-I

10msec

°



T = 25 C

Tj = 150°C

V = 0 V



0.1

0.4 0.6 0.8 1.0 1.2

-V ,Source-to-Drain Voltage (V)

SD

GS

Fig 7. Typical Source-Drain Diode

Single Pulse

0.1 1 10 100 1000

-V

, Drain-toSource Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRF6216

2.5

2.0

1.5

1.0

D

-I , Drain Current (A)

0.5

0.0 25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

100

R

D.U.T.

D

-

+

V

DD

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

D = 0.50

thJA

Thermal Response (Z )

0.20

10

0.10

0.05

P

0.02

1

0.01

SINGLE PULSE

(THERMAL RESPONSE)



0.1

0.0001 0.001 0.01 0.1 1 10 100 1000

t , Rectangular Pulse Duration (sec)

1

Notes:

1. Duty factor D = t / t



2. Peak T = P x Z + T

J DM thJA A

DM

t



1 2

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF6216

)

(BR)

0.23

)

Ω

0.22

V

= -10V

0.21

, Drain-to-Source On Resistance (

0.20

DS (on)

R

0.19 0 2 4 6 8 10 12 14 16 18

GS

Fig 12. On-Resistance Vs. Drain Current

Current Regulator

Same Type as D.U.T.

.2µF

12V

V

GS

50KΩ

.3µF

D.U.T.

-3mA

I

G

Current Sampling Resistors

-V

GS

V

DS

+

I

D

V

G

QGSQ

Q

G

GD

Charge

Fig 14a&b. Basic Gate Charge Test Circuit

and Waveform

)

1.50

Ω

1.00

0.50

ID = -2.2A

, Drain-to -Source On Resistance (

DS(on)

0.00

R

4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0

-V

Gate -to -Source Voltage (V)

GS,

Fig 13. On-Resistance Vs. Gate Voltage

500

TOP

400

300



BOTTOM

I

D

-1.8A

-3.2A

-4.0A

200

V

DS

I

AS

t

p

V

DSS

R

G

-20V

Fig 15a&b. Unclamped Inductive Test circuit

and Waveforms

L

D.U.T

I

AS

t

p

0.01

DRIVER

Ω

V

15V

100

DD

A

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting Tj, Junction Temperature( C

°

Fig 15c. Maximum Avalanche Energy

Vs. Drain Current

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SO-8 Package Details

D

5

- B -

8 7 6 5

5

E

- A 1 2 3 4

e

6X

- C -

0.25 (.0 1 0) M C A S B S

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.

2. C O N TRO LLIN G DIM E N S IO N : IN CH.

3. DIMENSIONS ARE SHOW N IN MILLIMETERS (INCHES).

4. O U T L INE C O NFOR MS T O JE D E C O U TL INE M S- 0 12A A . DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS

5 M O LD PRO T RUS ION S NOT TO E XC EE D 0 .2 5 (.00 6). DIM E NSIONS IS T H E L E N G TH O F L E A D FO R SOL D E RING TO A S UB S T R A T E ..

6

B 8X

e1

A1

H

0 .2 5 (.0 1 0) M A M

A

0.10 (.004)

θ

L 8X

K x 45°

6

C 8X

IRF6216

IN CHE S M IL L IMET E R S

DIM

M IN M A X M IN MAX A .0 532 .0 688 1 .3 5 1 .7 5 A1 .0 040 .0 098 0 .1 0 0 .2 5 B .0 14 .018 0 .3 6 0 .4 6 C .0 075 .0 0 9 8 0 .1 9 0.2 5 D .1 89 .1 9 6 4 .8 0 4.9 8 E .1 50 .157 3 .8 1 3 .9 9 e .0 5 0 BAS IC 1 .2 7 BA S IC e1 .0 2 5 BAS IC 0.635 BA S IC H .2 284 .2 4 4 0 5 .80 6 .2 0 K .0 11 .019 0 .2 8 0 .4 8 L 0 .1 6 .0 50 0.41 1 .2 7

θ

0 ° 8° 0° 8°

RECOMMENDED FOOTPRINT

0.72 (.028 ) 8X

6.46 ( .255 )

1.27 ( .050 ) 3X

1.78 (.0 70) 8X

SO-8 Part Marking

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IRF6216

(

)

(

SO-8 Tape and Reel

TERMINAL NUMBER 1

12.3 ( .484

11.7 ( .461

8.1 ( .318

7.9 ( .312

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

NOT ES :

1. CONTRO LL ING DIMEN SION : MILLIMETER.

2. OUTLINE CO NF O RM S TO EIA-481 & EIA-541.

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Starting T

RG = 25Ω, I

= 25°C, L = 25mH

J

= -4.0A.

AS

FEED DIRECTION

INC H ES).

330.00

12.992

MAX.

14.40 ( .566

12.40 ( .488

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 When mounted on 1 inch square copper board.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.02/02

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