Page 1
PD - 91643
IRF6215S/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRF6215S)
l Low-profile through-hole (IRF6215L)
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
2
Pak is a surface mount power package capable of
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF6215L) is available for lowprofile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -13
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -9.0 A
I
DM
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 110 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
T
STG
Pulsed Drain Current -44
Linear Derating Factor 0.71 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 310 mJ
Avalanche Current -6.6 A
Repetitive Avalanche Energy 11 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 1.4
Junction-to-Ambient ( PCB Mounted,steady-state)** –– – 40
2
D Pak
D
V
R
DS(on)
= -150V
DSS
= 0.29Ω
ID = -13A
S
TO-262
°C/W
°C
5/13/98
Page 2
IRF6215S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Drain-to-Source Breakdown Voltage -150 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.20 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.29 VGS = -10V, ID = -6.6A
––– ––– 0.58
Ω
VGS = -10V, ID = -6.6A TJ = 150°C
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 3.6 ––– ––– S VDS = -25V, ID = -6.6A
Drain-to-Source Leakage Current
––– ––– - 25
––– ––– -250 VDS = 120V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = -20V
Gate-to-Source Reverse Leakage ––– – –– -100
VDS = 150V, VGS = 0V
µA
nA
VGS = 20V
Total Gate Charge ––– ––– 66 ID = -6.6A
Gate-to-Source Charge ––– ––– 8.1 nC VDS = -120V
Gate-to-Drain ("Miller") Charge ––– –– – 35 VGS = -10V, See Fig. 6 and 13
Turn-On Delay Time ––– 14 ––– VDD = -75V
Rise Time ––– 36 ––– ID = -6.6A
Turn-Off Delay Time ––– 53 – –– RG = 6.8Ω
Fall Time ––– 37 ––– RD = 12Ω, See Fig. 10
Internal Source Inductance 7.5
––– –––
Between lead,
nH
and center of die contact
Input Capacitance ––– 860 –– – VGS = 0V
Output Capacitance ––– 220 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz, See Fig. 5
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
-11
-44
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -6.6A, VGS = 0V
Reverse Recovery Time ––– 160 240 ns TJ = 25°C, IF = -6.6A
Reverse Recovery Charge ––– 1. 2 1.7 µC di/dt = -100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
G
S
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
I
SD
= 25°C, L = 14mH
J
= -6.6A. (See Figure 12)
AS
≤ -6.6A, di/dt ≤ -620A/µs, V
DD
≤ V
(BR)DSS
Uses IRF6215 data and test conditions
,
TJ ≤ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Page 3
IRF6215S/L
A
A
)
A
A
100
VGS
TO P - 15 V
- 10V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
BOT TO M - 4.5V
10
D
-I , Dra in-to-Sou rc e C u rre nt (A )
-4.5V
1
1 10 100
-V , Drain-to-Source Voltage (V)
DS
20µs PULSE WIDTH
TJ = 25°C
T = 2 5°C
c
Fig 1. Typical Output Characteristics
100
100
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
D
-I , Drain-to-Source Current (A)
1
1 10 100
-V , Dra in-t o- S o u rc e Voltage (V
DS
-4. 5V
20µs PULSE WIDTH
TJ = 175°C
T = 175°C
C
Fig 2. Typical Output Characteristics
2.5
I = - 1 1 A
D
T = 25°C
J
T = 175°C
10
D
-I , D rain- to-S o urc e C u rre nt (A )
1
45678910
-V , Gate-to-Source Voltage (V)
GS
J
V = -50 V
DS
20µs PULSE W IDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
1.0
(No rm ali zed )
0.5
DS (on)
R , D r a in-to -S o u rc e O n R e s is ta nc e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , J unc tion T empe rature ( °C )
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V = - 10 V
GS
Page 4
IRF6215S/L
A
)
A
A
)
g
A
)
2000
1600
1200
800
C, Capacitance (pF)
400
0
1 10 100
V = 0V, f = 1M Hz
GS
C = C + C , C S H O RTE D
is s gs gd d s
C = C
rss g d
C = C + C
oss ds gd
C
iss
C
oss
C
rss
-V , Drai n-to - S o ur c e Voltage (V
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
T = 175°C
10
J
T = 25°C
J
20
I = -6 .6A
16
12
GS
D
8
4
V = - 12 0 V
DS
V = - 75 V
DS
V = - 30 V
DS
-V , G a te- to-Sou rc e Volta g e (V)
FOR TEST CIRCU IT
0
0 20406080
Q , To ta l Ga te C h a rge (nC
G
SE E F IG U R E 13
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OP ER A T IO N IN T HIS A R E A L IMITE D
BY R
10
DS(on)
10µs
100µs
1
SD
-I , Reverse Drain Current (A)
0.1
0.2 0.6 1.0 1.4 1.8
-V , Source-to-Drain Voltage (V)
SD
V = 0V
Fig 7. Typical Source-Drain Diode
GS
D
-I , Drain C u rren t (A )
T = 25 °C
TC = 25°C
C
T = 17 5 °C
J
le P ulse
Sin
1
1 10 100 1000
-V , Dra in -to -Sou rc e V o ltage (V
DS
Fig 8. Maximum Safe Operating Area
1ms
10ms
Forward Voltage
Page 5
IRF6215S/L
15
12
9
6
D
-I , Drain Current (A)
3
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
R
D.U.T.
D
-
+
V
DS
V
GS
R
G
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
V
DD
thJC
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
Thermal Response (Z )
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Page 6
IRF6215S/L
(BR)
A
)
L
D.U.T
I
AS
0.01
p
DRIVER
Ω
15V
V
DD
R
-20V
V
DS
G
t
Fig 12a. Unclamped Inductive Test Circuit
I
AS
t
p
V
DSS
800
I
TO P -2 .7 A
D
-4.7 A
BOT TOM -6.6 A
A
600
400
200
AS
E , S ing le Puls e A va lan c h e E n erg y ( mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature (°C
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Q
G
-10V
Q
GS
V
G
Q
GD
Charge
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
V
GS
.3µF
D.U.T .
-3mA
I
G
Current Sampling Resistors
V
DS
+
I
D
Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform
Page 7
IRF6215S/L
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
-
R
G
V
GS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• ISD controlled by Duty Factor "D"
+
G
• D.U.T. - Device Under Test
P.W.
D =
Period
+
V
DD
-
VGS=10V
[ ] ***
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
Current
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
di/dt
Diode Recovery
dv/dt
Fig 14. For P-Channel HEXFETS
V
DD
[ ]
I
[ ]
SD
Page 8
IRF6215S/L
A
D2Pak Package Outline
10.54 (.415)
1.40 (.055)
MAX.
1.78 (.070)
1.27 (.050)
1.40 (.055)
3X
1.14 (.045)
5.08 (.200)
NOTE S:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
10.29 (.405)
- A 2
1 3
15.49 (.610)
14.73 (.580)
0.93 (.037)
3X
0.69 (.027)
0.2 5 ( .0 10) M B A M
Part Marking Information
D2Pak
4.69 (.185)
4.20 (.165)
5.28 (.208)
4.78 (.188)
0.55 (.022)
0.46 (.018)
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
LEAD ASSIGNMENTS
1 - G ATE
2 - D RAIN
3 - S OU R CE
10.16 (.400)
REF.
6.47 (.255)
6.18 (.243)
2.61 (.103)
2.32 (.091)
8.89 (.350)
REF.
MINIMUM RECOM MENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
2.54 (.100)
2X
INTERNATIONAL
RE CTIFIER
L O G O
A S SEMBLY
LO T CO D E
F530S
9246
9 B 1 M
PART NUM B ER
DATE CODE
(YYW W )
YY = YEAR
WW = WEEK
Page 9
Package Outline
TO-262 Outline
IRF6215S/L
Part Marking Information
TO-262
Page 10
IRF6215S/L
Tape & Reel Information
D2Pak
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
1.60 (.063)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
FEED D IRECTION
1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
NOTES :
1. COM FO R M S TO E IA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HU B.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
11.60 (.457)
11.40 (.449)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
15.42 (.609)
15.22 (.601)
27.40 (1.079)
23.90 (.941)
4
26.4 0 (1.039)
24.40 (.961 )
3
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX .
4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 5/98
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