Page 1
IRF620
IRF620FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE V
IRF 620
IRF 620FI
■ TYPICAL R
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
DS(on)
DSS
200 V
200 V
= 0.55 Ω
R
DS(on)
<0.8Ω
<0.8Ω
I
D
6A
4A
o
C
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ INDUSTRIALACTUATORS
■ DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
3
2
1
TO-220 ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramete r Val u e Unit
IRF 62 0 IRF620FI
V
V
V
I
DM
P
V
T
(•) Pulsewidth limited bysafe operating area
November 1996
Drain - s ource Voltage (VGS=0) 200 V
DS
Drain- gate Voltage (RGS=20kΩ)200V
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Current (cont.) at Tc=25oC64A
D
Drain Current (cont.) at Tc=100oC42A
I
D
(•) Drain Current (pulsed) 24 24 A
Total Di ssipation at Tc=25oC7030W
tot
Derat ing Factor 0.56 0.24 W/
Ins ulation Withs t and Voltage (DC) 2000 V
ISO
St or a ge Tem perature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
o
C
1/9
Page 2
IRF620/FI
THERMAL DATA
TO-220 ISOW ATT 220
R
thj-case
R
thj-amb
R
thc-s
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
E
E
I
AR
Thermal Res istance Junction - cas e Max 1.79 4.17
Thermal Resis tance Junction- ambient M ax
Thermal Res istance Case-sink Typ
Maximum Lead T emperature For Soldering Purpose
l
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng T
Repetitive Avalanc he Energ y
AR
=25oC, ID=IAR,VDD=25V)
j
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(Tc= 100oC, pulse width limited by Tjmax, δ <1%)
62.5
0.5
300
6A
20 mJ
5mJ
4A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
OFF
Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
ID=250µAVGS= 0 200 V
Break d own Volta ge
I
DSS
I
GSS
Zer o Gate Volt age
Drain Current (VGS=0)
Gat e- body Leak age
VDS=MaxRating
VDS= Max Rating x 0 .8 Tc=125oC
10
100
VGS= ± 20 V ± 100 nA
Current (VDS=0)
ON (∗)
Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID=250µA234V
St at ic Drain-s our ce O n
VGS=10V ID=3A 0.55 0.8 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)maxVGS
=10V 6 A
DYNAMIC
Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=3A 1.5 3.5 S
VDS=25V f=1MHz VGS=0 460
90
20
600
120
30
µA
µA
pF
pF
pF
2/9
Page 3
IRF620/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit
t
d(on)
t
d(off)
Q
Q
Q
Turn-on T im e
t
Rise Time
r
Tur n - of f Delay Time
Fall Time
t
f
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SOURCE DRAIN DIODE
Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) For w ar d On Voltage ISD=6A VGS=0 1.5 V
I
V
I
SDM
SD
SD
VDD=100V ID=3A
RG=50 Ω VGS=10V
(see test circ uit)
ID=6A VGS=10V
VDD= Max Rating x 0.8
(see test circ uit)
30
70
135
45
20
6
8
45
100
190
65
30 nC
6
24
ns
ns
ns
ns
nC
nC
A
A
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
ISD=6A di/dt=100A/µs
VDD= 100 V Tj= 150oC
170
1
Charge
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Area for TO-220 Safe Operating Area for ISOWATT220
ns
µC
3/9
Page 4
IRF620/FI
Thermal Impedance for TO-220
Derating Curve for TO-220
Thermal Impedance for ISOWATT220
Derating Curve for ISOWATT220
Output Characteristics
4/9
Transfer Characteristics
Page 5
Transconductance Static Drain-source On Resistance
Maximum Drain Current vs Temperature Gate Charge vs Gate-source Voltage
IRF620/FI
Normalized Breakdown Voltage vs TemperatureCapacitance Variations
5/9
Page 6
IRF620/FI
Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics
Unclamped Inductive Load Test Circuit Unclamped Inductive Waveforms
Switching Time Test Circuit Gate Charge Test Circuit
6/9
Page 7
TO-220 MECHANICAL DATA
IRF620/FI
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
E
A
L4
D
F2
F1
G1
H2
G
F
C
D1
L2
Dia.
L5
L7
L6
L9
P011C
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Page 8
IRF620/FI
ISOWATT220 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
E
A
D
B
L3
L6
L7
Ø
F1
F
G1
H
G
F2
123
L2
L4
P011G
8/9
Page 9
IRF620/FI
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of useof such informationnor for any infringement of patents or other rightsof third parties which mayresults fromits use. No
licenseis granted by implication orotherwise under any patentor patent rights of SGS-THOMSONMicroelectronics. Specificationsmentioned
in thispublication are subject to change withoutnotice. Thispublication supersedes andreplacesall informationpreviously supplied.
SGS-THOMSONMicroelectronics products are not authorizedfor use ascriticalcomponents in lifesupportdevicesor systems withoutexpress
writtenapproval ofSGS-THOMSONMicroelectonics.
1996 SGS-THOMSON Microelectronics -Printed in Italy- AllRightsReserved
Australia- Brazil -Canada -China - France- Germany - HongKong- Italy - Japan- Korea- Malaysia - Malta- Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland-Taiwan - Thailand- UnitedKingdom - U.S.A
SGS-THOMSONMicroelectronics GROUPOF COMPANIES
.
9/9
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