Datasheet IRF614 Datasheet (Intersil)

January 1998

IRF614

2.0A, 250V, 2.0 Ohm,

N-Channel Power MOSFET

Features

• 2.0A, 250V

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 2.0Ω

DS(ON)

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

IRF614 TO-220AB IRF614

NOTE: When ordering, use the entire part number.

Description

This is an N-Channel enhancement mode silicon gate power
field effect transistor. It is an advanced power MOSFET
designed, tested, and guaranteed to withstand a specified
level of energy in the breakdown avalanche mode of opera­tion. This power MOSFET is designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.

Formerly developmental type TA17443.

Symbol

D

G

S

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

1

File Number 3273.1

IRF614

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF614 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC= 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D
D

DM

GS

D

250 V
250 V

2.0

1.3

8.0 A

±20 V

20 W

A
A

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.16 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

61 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)VDS

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)VGS

Forward Transconductance (Note 2) g

Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSVGS

DSS

GSS

fs

r

f

gs

gd

ISS

OSS

RSS

= 0V, ID = 250µA, (Figure 10) 250 - - V

= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - 25 µA

DSS

, VGS = 0V

DSS

- - 250 µA

TJ = 125oC

> I

D(ON)

x r

DS(ON)MAX

, VGS = 10V,

2.0 - - A

(Figure 7)
VGS = ±20V - - ±100 nA

= 10V, ID = 2.5A, (Figures 8, 9) - 1.6 2.0 A
VDS > I

D(ON)

x r

DS(ON)MAX

, ID = 2.5A,

0.8 1.2 - S

(Figure 12)
VDD = 0.5 x Raterd BV

, ID≈ 2.0A, RL = 61Ω

DSS

- 8.9 13 ns
VGS = 10V, (Figures 17, 18)
MOSFET Switching Times are Essentially Inde­pendent of Operating Temperature

-1218ns

-1827ns

- 8.9 15 ns

= 10V, ID = 2.0A, VDS = 0.8 x Rated BV

I

= 1.5mA (Figures 14, 19, 20) Gate

G(REF)

DSS

- 9.6 14.4 nC

Charge is Essentially Independent of Operating
Temperature

- 2.4 3.6 nC

- 4.5 6.7 nC
VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11) - 180 - pF

-53- pF

-14- pF

2

IRF614

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

(Note 3)

θJC

θJA

SD

I

SDM

Measured From the

D

Drain Lead, 6mm
(0.25in) From Package
to Center of Die

Measured From the

S

Source Lead, 6mm

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

- 4.5 - nH

- 7.5 - nH

(0.25in) from Header to
Source Bonding Pad

G

L

S

S

- - 6.4oC/W
Free Air Operation - - 62.5oC/W

Modified MOSFET Sym­bol Showing the Integral
Reverse P-N Junction

D

- - 2.0 A

- - 8.0 A

Rectifier

G

S

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovery Charge Q

TJ = 25oC, ISD = 2.0A, VGS = 0V, (Figure 13) - - 2.0 V

SD

TJ = 25oC, ISD = 2.0A, dISD/dt = 100A/µs 67 - 340 ns

rr

TJ = 25oC, ISD = 2.0A, dISD/dt = 100A/µs 0.24 0.54 1.2 µC

RR

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 10V, starting TJ= 25oC, L = 6.18mH, RG= 50Ω, peak IAS = 5A. See Figures 15, 16.

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

, DRAIN CURRENT (A)
I

2.0

1.6

1.2

0.8

D

0.4

0

25 50 75 100 125

T

, CASE TEMPERATURE (oC)

C

150

FIGURE 1. NORMALIZED POWER DISSIPATION vs

CASE TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

3

IRF614

Typical Performance Curves

10

0.5

C/W)

o

0.2

0.1

0.05

1

0.02

0.01

, TRANSIENT

0.1

θJC

Z

10

SINGLE PULSE

THERMAL IMPEDENCE (

-2

10

-5

10

1

-4

10

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

Unless Otherwise Specified (Continued)

-3

10

t1, RECTANGULAR PULSE DURATION (s)

1µs

100µs

1ms

-2

10

3.0
VGS = 10V

2.4

1.8

P

DM

t

1

t

NOTES:
DUTY FACTOR: D = t

= PDM x Z

PEAK T

J

-1

10

1

2

θJC

1/t2

+ T

C

10

80µs PULSE TEST

VGS = 6.5V

VGS = 6V

OPERATION IN THIS
AREA IS LIMITED

0.1

, DRAIN CURRENT (AMPERES)

TC = 25oC

D

I

T

J

SINGLE PULSE

-2

10

110

BY r

= MAX RATED

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

10

10ms

DC

2

3

10

1.2

, DRAIN CURRENT (A)

D

I

0.6

0

020406080

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

3.0

80µs PULSE TEST

2.4

1.8

1.2

, DRAIN CURRENT (A)

D

I

0.6

0

0

1
VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 10V

VGS = 6.5V

VGS = 6V

VGS = 5.5V

VGS = 5V

VGS = 4V

23 5

4

10

80µs PULSE TEST

= 2 x V

V

DS

GS

1

0.1

, DRAIN CURRENT (A)

D

I

-2

10

0246 10

VG, GATE TO SOURCE VOLTAGE (V)

VGS = 5.5V

VGS = 5V

VGS = 4V

100

8

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

4

IRF614

Typical Performance Curves

10

8

6

4

, DRAIN TO SOURCE

ON RESISTANCE (Ω)

2

DS(ON)

r

0

0

2

4

ID, DRAIN CURRENT (A)

Unless Otherwise Specified (Continued)

VGS = 10V

VGS = 20V

68

NOTE: Heating effect of 2.0µs pulse is minimal.

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

1.25
ID = 250mA

1.15

3.0
VGS = 10V, ID = 2.5A

2.4

1.8

1.2

ON RESISTANCE

0.6

NORMALIZED DRAIN TO SOURCE

0.2

10

-40 0 40
T

, JUNCTION TEMPERATURE (oC)

J

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

500

VGS= 0V, f = 1MHz
C

= CGS + C

400

C
C

ISS
RSS
OSS

= C
= CDS+ C

GD

GD

GD

80

120

160

1.05

0.95

BREAKDOWN VOLTAGE

0.85

NORMALIZED DRAIN TO SOURCE

0.75

-40 0 40

80

, JUNCTION TEMPERATURE (oC)

T

J

120 160

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

2.0
VDS= 2 x VGS MAX, PULSE TEST = 80µs

1.6

= 25oC

T

J

1.2

0.8

0.4

, TRANSCONDUCTANCE (S)

fs

g

0

0 0.8 1.6 2.4 3.2

ID, DRAIN CURRENT (A)

TJ = 150oC

300

200

C, CAPACITANCE (pF)

100

0

C

ISS

C

OSS

C

RSS

10

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

10

1

TJ = 25oC

0.8 1.2 1.60.4

4.0

TJ = 150oC

0.1

, SOURCE TO DRAIN CURRENT (A)

DR

I

-2

10

0

VSD, SOURCE TO DRAIN VOLTAGE (V)

1001

2.0

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

5

IRF614

Typical Performance Curves

20

16

12

8

, GATE TO SOURCE (V)

4

GS

V

0

036912

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Test Circuits and Waveforms

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

AS

R

G

Unless Otherwise Specified (Continued)

ID = 5A

= 50V

V

DS

V

= 125V

DS

20

VDS = 200V

Q

, TOTAL GATE CHARGE (nC)

g(TOT)

V

DS

L

+

V

DD

-

DUT

16

BV

DSS

t

P

I

AS

V

DS

V

DD

0V

P

I

AS

0.01Ω

0

t

AV

t

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

t

ON

t

d(ON)

t

R

L

+

V

R

G

DUT

V

GS

DD

-

V

DS

90%

0

V

GS

10%

0

r

10%

50%

PULSE WIDTH

t

d(OFF)

90%

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

t

OFF

50%

t

f

90%

10%

6

IRF614

Test Circuits and Waveforms

CURRENT

REGULATOR

12V

BATTERY

0

0.2µF

50kΩ

I

G(REF)

0.3µF

G

IG CURRENT

SAMPLING

RESISTOR RESISTOR

FIGURE 19. GATE CHARGE TEST CIRCUIT

(Continued)

V

DS

(ISOLATED
SUPPLY)

SAME TYPE
AS DUT

D

DUT

S

CURRENT

I

D

SAMPLING

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

DS

0

V

DS

0

I

G(REF)

V

GS

FIGURE 20. GATE CHARGE WAVEFORMS

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