Datasheet irf6100 Datasheet

l Ultra Low R l Low Thermal Resistance l P-Channel MOSFET

l One-third Footprint of SOT-23 l Super Low Profile (<.8mm) l Available Tested on Tape & Reel

per Footprint Area

DS(on)

PD - 93930C

IRF6100

HEXFET® Power MOSFET

V

DSS

-20V 0.065Ω@VGS = -4.5V -5.1A

R

DS(on)

max I

D

0.095Ω@VGS = -2.5V -4.1A

Description

True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques, and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits, combined with the ruggedized device design , that International Rectifier is well known for,

tremely efficient and reliable device.

The FlipFET™ package, is one-third the footprint of a comparable SOT-23 package and has a profile of less than .8mm. Combined with the low thermal resistance of the die level device, this makes the FlipFET™ the best device for application where printed circuit board space is at a premium and in extremely thin application environments such as battery packs, cell phones and PCMCIA cards.

provides the designer with an ex-

G

D

S

FlipFET™ ISOMETRIC

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V ±5.1 ID @ TC = 70°C Continuous Drain Current, VGS @ 4.5V ±3.5 A I

DM

PD @TC = 25°C Power Dissipation 2.2 PD @TC = 70°C Power Dissipation 1.4

V

GS

T

J, TSTG

Drain- Source Voltage -20 V

Pulsed Drain Current  ±35

Linear Derating Factor 17 mW/°C Gate-to-Source Voltage ± 12 V Junction and Storage Temperature Range -55 to + 150 °C

W

Thermal Resistance

Symbol Parameter Typ. Max. Units

R

θJA

R

θJ-PCB

Junction-to-Ambient 56.5 °C/W Junction-to-PCB mounted 35 –––

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9/5/01

IRF6100

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– -0.010 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.065 VGS = -4.5V, ID = -5.1A  ––– ––– 0.095 VGS = -2.5V, ID = -4.1A 

Ω

Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA Forward Transconductance 9.8 ––– ––– S VDS = -10V, ID = -5.1A

Drain-to-Source Leakage Current

––– ––– -1.0

––– ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 1 00 VGS = 12V Gate-to-Source Reverse Leakage ––– ––– -100

VDS = -20V, VGS = 0V

µA

nA

VGS = -12V Total Gate Charge ––– 14 21 ID = -5.1A Gate-to-Source Charge ––– 1.9 2. 9 nC VDS = -16V Gate-to-Drain ("Miller") Charge ––– 5.0 7.5 VGS = -5.0V Turn-On Delay Time ––– 12 ––– VDD = -10V Rise Time ––– 12 ––– ID = -1.0A Turn-Off Delay Time ––– 50 ––– RG = 5.8Ω

ns

Fall Time ––– 50 ––– VGS = -4.5V  Input Capacitance ––– 1230 ––– VGS = 0V Output Capacitance ––– 250 – –– pF VDS = -15V Reverse Transfer Capacitance ––– 180 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol (Body Diode) showing the Pulsed Source Current integral reverse (Body Diode)  p-n junction diode.

–––

-2.2

––– ––– -33

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.2A, VGS = 0V  Reverse Recovery Time ––– 48 72 ns TJ = 25°C, IF = -2.2A Reverse RecoveryCharge ––– 34 51 nC di/dt = 100A/µs



Notes:

 Repetitive rating; pulse width limited by

 When mounted on 1 inch square 2oz copper on FR-4.

max. junction temperature.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

2 www.irf.com

D

S

IRF6100

100

10

1

0.1

D

-I , Drain-to-Source Current (A)

0.01

0.1 1 10 100

VGS

TOP

-7.00V

-5.00V

-4.50V

-2.50V

-1.80V

-1.50V

-1.20V

BOTTOM

-1.00V

20µs PULSE WIDTH T = 25 C

J

-V , Drain-to-Source Voltage (V)

DS

°

Fig 1. Typical Output Characteristics

100

10

1

D

-I , Drain-to-Source Current (A)

0.1

0.1 1 10 100

VGS

TOP

-7.00V

-5.00V

-4.50V

-2.50V

-1.80V

-1.50V

-1.20V

BOTTOM

-1.00V

20µs PULSE WIDTH T = 150 C

J

-V , Drain-to-Source Voltage (V)

DS

°

Fig 2. Typical Output Characteristics

2.0

-5.1A

I =

D

°

T = 25 C

J

T = 150 C

J

10

D

-I , Drain-to-Source Current (A)

V = -15V

DS

1

1.0 1.5 2.0 2.5 3.0

-V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

°

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature( C)

J

Fig 4. Normalized On-Resistance

V =

-4.5V

GS

°

Vs. Temperature

www.irf.com 3

IRF6100

2000

1600

1200

800

C, Capacitance (pF)

400

0

1 10 100

V

=

0V,

GS

C

=

issgsgd , ds

C

=

rssgd

C

=

oss dsgd

C

iss

C

oss

C

rss

-V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C C C

C SHORTED

+ C

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

10

I =

-5.1A

D

8

6

4

2

GS

-V , Gate-to-Source Voltage (V)

0

0 4 8 12 16 20 24

Q , Total Gate Charge (nC)

G

V =-16V

DS

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

100

10

1

SD

-I , Reverse Drain Current (A)

0.1

0.0 0.4 0.8 1.2 1.6 2.0 2.4

Fig 7. Typical Source-Drain Diode

°

T = 150 C

J

°

T = 25 C

J

-V ,Source-to-Drain Voltage (V)

SD

V = 0 V

GS

10us

10

D

-I , Drain Current (A)I , Drain Current (A)

1

°

= 25 C

A

T T= 150 C Single Pulse

0.1

0.1 1 10 100

°

J

-V , Drain-to-Source Voltage (V)

DS

100us

1ms

10ms

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRF6100

6.0

5.0

4.0

3.0

2.0

D

-I , Drain Current (A)

1.0

0.0 25 50 75 100 125 150

T , Case Temperature ( C)

C

Fig 9. Maximum Drain Current Vs.

Case Temperature

100

R

D.U.T.

D

-

+

V

DD

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

t

V 10%

d(on)tr

GS

°

90% V

DS

t

d(off)tf

Fig 10b. Switching Time Waveforms

D = 0.50

thJA

Thermal Response (Z )

0.20

10

0.10

0.05

0.02

1

0.01 SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10

t , Rectangular Pulse Duration (sec)

1

J DM thJA A

P

DM

t

1 2

1

t

2

Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF6100

)

0.08

Ω

0.07

0.06

0.05

ID = -5.1A

0.04

, Drain-to -Source On Resistance (

DS(on)

0.03

R

1.0 2.0 3.0 4.0 5.0 6.0 7.0

-V

Gate -to -Source Voltage (V)

GS,

Fig 12. Typical On-Resistance Vs. Gate

Voltage

)

0.16

Ω

0.12

0.08 V

= -2.5V

, Drain-to-Source On Resistance (

DS (on)

R

0.04

GS

V

GS

= -4.5V

0 10203040

-ID , Drain Current (A)

Fig 13. Typical On-Resistance Vs. Drain

Current

Current Regulator

Same Type as D.U.T.

50KΩ

Q

G

Q

GS

V

G

Q

GD

Charge

Fig 14a. Basic Gate Charge Waveform

Fig 14b. Gate Charge Test Circuit

12V

.2µF

V

GS

.3µF

D.U.T .

-3mA

I

G

Current Sampling Resistors

I

V

DS

+

D

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IRF6100

1.1

1.0

0.9

0.8

0.7

Gate threshold Voltage (V)

0.6

GS(th)

0.5

-V

0.4

-75 -50 -25 0 25 50 75 100 125 150

TJ , Temperature ( °C )

ID = -250µA

Fig 15. Threshold Voltage Vs. Temperature

20

16

12

8

Power (W)

4

0

0.001 0.010 0.100 1.000 10.000

Time (sec)

Fig 16. Typical Power Vs. Time

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IRF6100

FlipFET™ Outline Dimension and Tape and Reel

0.10 [.004]

C

2X

B

1.524 [.060]

1

A

0.10 [.004]

4

C

2X

Ø 13 "

0.800

2X

[.032]

C

0.280 [.0110]

0.240 [.0094]

2

0.05 [.002]

0.800 [.032 ]

1.524 [.060]

3

0.400

4X

[.016]

C

4X Ø

0.15 [.006]

0.08 [.003] C

0.537 [.0211]

0.507 [.0199]

0.388 [.0153]

0.338 [.0133]

RECOMMENDED FOO TPRINT

SOURCEGATE

DRAINDRAIN

C A B

0.812 [.032]

0.752 [.029]

BALL A SSIGNMENTS

1 = SOURC E 2 = DRAIN 3 = DRAIN 4 = GA TE

0.20 [.008]

C

4X Ø 0.25 [. 010]

8mm

BALL # 1 CORNE R

8mm

FEED DIRECTION

NOTES :

1. TAPE AND REEL OUTLINE CONFORMS TO EIA-481 & EIA-541.

NOTES:

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. CONTROLLING DIMENSION: MILLIMETER

3. DIMENSIONS ARE SHOW N IN MILLIMETERS [INCHES].

4mm

PART MARK I NG

PIN 1 MARK

PART NUMBER

LOT NUMBER

DA TE CODE

IRF 6100 F001 2301

0.800 [.032 ]

Data and specifications subject to change without notice.

This product has been designed and qualified for the consumer market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.9/01

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