Datasheet IRF5Y6215CM Datasheet (International Rectifier)

PD - 94165

HEXFET

®

POWER MOSFET

THRU-HOLE (TO-257AA)

Product Summary

Part Number BV

DSS

IRF5Y6215CM -150V 0.29Ω -11A

Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.

These devices are well-suited for applications such
as switching power supplies, motor controls, invert­ers, choppers, audio amplifiers and high-energy pulse
circuits.

RDS(on) ID

IRF5Y6215CM

150V, P-CHANNEL

TO-257AA

Features:

n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight

Absolute Maximum Ratings

Parameter Units

ID @ VGS = -10V, TC = 25°C Continuous Drain Current -11

ID @ VGS = -10V, TC = 100°C Continuous Drain Current -7.0

I

DM

PD @ TC = 25°C Max. Power Dissipation 75 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt ➂ 12

T

J

T

STG

For footnotes refer to the last page

Pulsed Drain Current ➀ -44

Linear Derating Factor 0.6 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 135 mJ
Avalanche Current ➀ -6.6 A
Repetitive Avalanche Energy ➀ 7.5 mJ

Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature 300 (0.063in./1.6mm from case for 10sec)
Weight 4.3 (Typical) g

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A

V/ns

o

C

04/10/01

IRF5Y6215CM

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BV

DSS

∆BV

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

LS + L

C

iss

C

oss

C

rss

DSS

D

Drain-to-Source Breakdown Voltage -150 — — V VGS = 0V, ID = -250µA

/∆TJTemperature Coefficient of Breakdown — 0.18 — V/°C Reference to 25°C, ID = -1.0mA

Voltage
Static Drain-to-Source On-State — — 0.29 Ω VGS = -10V, ID = -6.6A
Resistance
Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 6.0 — — S ( )VDS ≥ 15V, IDS = -6.6A ➃
Zero Gate Voltage Drain Current — — -25 V

— — -250 VDS = -120V,

Gate-to-Source Leakage Forward — — -100 VGS = -20V
Gate-to-Source Leakage Reverse — — 100 VGS = 20V
Total Gate Charge — — 66 VGS = -10V, ID = -6.6A
Gate-to-Source Charge — — 13 nC VDS = -120V
Gate-to-Drain (‘Miller’) Charge — — 4 0
Turn-On Delay Time — — 25 VDD = -75V, ID = -6.6A,
Rise Time — — 65 VGS = -10V, RG = 6.8Ω
Turn-Off Delay Time — — 75
Fall Time — — 53
Total Inductance — 6.8 —

Input Capacitance — 1000 — VGS = 0V, VDS = -25V
Output Capacitance — 230 — pF f = 1.0MHz
Reverse Transfer Capacitance — 115 —

Ω

µA

nA

ns

nH

lead (6mm/0.25in. from package)

➃

= -150V ,VGS=0V

DS

VGS = 0V, TJ =125°C

Measured from drain lead (6mm/

0.25in. from package) to source

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions

I

Continuous Source Current (Body Diode) — — -11

S

I

Pulse Source Current (Body Diode) ➀ — — -44

SM

V

Diode Forward Voltage — — -1.6 V Tj = 25°C, IS = -6.6A, VGS = 0V ➃

SD

t

Reverse Recovery Time — — 240 n s Tj = 25°C, IF = -6.6A, di/dt ≤ 100A/µs

rr

Q

Reverse Recovery Charge — — 1.7 µCV

RR

t

Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L

on

A

≤ −50V ➃

DD

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

R

thJC

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

2 www.irf.com

Junction-to-Case — — 1.67 °C/W

+ LD.

S

IRF5Y6215CM

100

10

1

D

-I , Drain-to-Source Current (A)

0.1

0.1 1 10 100

VGS

TOP

-15V

-10V

-8.0V

-7.0V

-6.0V

-5.5V



-5.0V

BOTTOM

-4.5V

-4.5V

20µs PULSE WIDTH



T = 25 C

J

-V , Drain-to-Source Voltage (V)

DS

°

Fig 1. Typical Output Characteristics

100

°

T = 25 C



J

T = 150 C



10

J

100

10

1

D

-I , Drain-to-Source Current (A)

0.1

0.1 1 10 100

VGS

TOP

-15V

-10V

-8.0V

-7.0V

-6.0V

-5.5V



-5.0V

BOTTOM

-4.5V

-4.5V

20µs PULSE WIDTH



T = 150 C

J

-V , Drain-to-Source Voltage (V)

DS

°

Fig 2. Typical Output Characteristics

2.5

2.0

°

1.5

I =



-11A

D

1.0

1

D

-I , Drain-to-Source Current (A)

15

V = -50V

DS



0.1
4 6 8 10 12 14

-V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature( C)

J



Fig 4. Normalized On-Resistance

V =

GS

°

-10V

Vs. Temperature

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IRF5Y6215CM

2000

1600

1200

800

C, Capacitance (pF)

400

0

1 10 100

V

=

0V,

GS

C

=

iss gs gd , ds

C

=

rss gd



C

=

oss ds gd

C



iss

C



oss

C



rss

-V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C
C
C

C SHORTED

+ C

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

20

I =

-6.6A

D



16

12

8

4

GS

-V , Gate-to-Source Voltage (V)

0

0 20 40 60 80

Q , Total Gate Charge (nC)

G

V =-120V

DS

V =-75V

DS



V =-30V

DS

FOR TEST CIRCUIT



SEE FIGURE

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

13

OPERATION IN THIS AREA

°

T = 150 C



J

10

°

T = 25 C



J

1

SD

-I , Reverse Drain Current (A)

V = 0 V



0.1

0.2 0.6 1.0 1.4 1.8 2.2

-V ,Source-to-Drain Voltage (V)

SD

GS

Fig 7. Typical Source-Drain Diode

100

10

1

, Drain-to-Source Current (A)

D

Tc = 25°C

-I

Tj = 150°C
Single Pulse

0.1
1 10 100 1000

Fig 8. Maximum Safe Operating Area

LIMITED BY RDS(on)

-V

, Drain-toSource Voltage (V)

DS

1ms

10ms

Forward Voltage

4 www.irf.com

IRF5Y6215CM

R

D.U.T.

D

-

+

V

DD

12

10

8

6

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

4

D

-I , Drain Current (A)

2

0

25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Fig 10a. Switching Time Test Circuit

V

GS

10%

90%
V

DS

t

d(on)tr

t

d(off)tf

Case Temperature

Fig 10b. Switching Time Waveforms

10

thJC

1

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE



(THERMAL RESPONSE)

Thermal Response (Z )

Notes:

1. Duty factor D = t / t



2. Peak T =P x Z + T

0.01

0.00001 0.0001 0.001 0.01 0.1 1

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

P

DM

t

1



1 2

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF5Y6215CM

(BR)

L

D.U.T

I

AS

0.01

t

p

DRIVER

Ω

15V

V

DD

A

R

V

G

V

-20 V

DS

GS

Fig 12a. Unclamped Inductive Test Circuit

I

AS

t

p

V

DSS

250

TOP

200

150

100

50

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting T , Junction Temperature( C)

J



BOTTOM

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I

D

-3.0A

-4.2A

-6.6A

°

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

Q

G

-10V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

-12V

12V

V

GS

Fig 13b. Gate Charge Test Circuit

50KΩ

.2µF

.3µF

-3mA

Current Sampling Resistors

­V

DS

+

D.U.T.

I

G

I

D

6 www.irf.com

Footnotes:

 Repetitive Rating; Pulse width limited by

maximum junction temperature.

 V

= -50 V, Starting TJ = 25°C, L= 6.2mH

DD

Peak IAS = -6.6A, VGS =-10 V, RG= 25Ω

 I

VDD ≤ -150V, TJ ≤ 150°C

 Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Case Outline and Dimensions — TO-257AA

≤ -6.6A, di/dt ≤ 380 A/µs,

SD

IRF5Y6215CM

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 04/01

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