Page 1
PD - 94302A
HEXFET
®
POWER MOSFET
SURFACE MOUNT (SMD-1)
Product Summary
Part Number BV
DSS
IRF5N3205 55V 0.008Ω 55A*
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse
circuits.
RDS(on) ID
IRF5N3205
55V, N-CHANNEL
SMD-1
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 55*
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 55*
I
DM
PD @ TC = 25°C Max. Power Dissipation 125 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 2.7
T
J
T
STG
* Current is limited by package
For footnotes refer to the last page
Pulsed Drain Current ➀ 220
Linear Derating Factor 1.0 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 140 mJ
Avalanche Current ➀ 55 A
Repetitive Avalanche Energy ➀ 12.5 mJ
Operating Junction -55 to 150
Storage Temperature Range
Package Mounting Surface Temp. 300 (for 5s)
Weight 2.6 (Typical) g
www.irf.com 1
A
V/ns
o
C
01/15/02
Page 2
IRF5N3205
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
DSS
∆BV
DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
LS + L
D
l pad to the center of source pad
Drain-to-Source Breakdown Voltage 55 — — V VGS = 0V, ID = 250µA
/∆TJTemperature Coefficient of Breakdown — 0.053 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
Static Drain-to-Source On-State — — 0.008 Ω VGS = 10V, ID = 52A
Resistance
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 55 — — S ( )VDS =15V, IDS = 52A ➃
Zero Gate Voltage Drain Current — — 25 V
— — 250 VDS = 44V,
Gate-to-Source Leakage Forward — — 100 VGS =-20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 170 VGS =10V, ID = 55A
Gate-to-Source Charge — — 32 n C VDS = 44V
Gate-to-Drain (‘Miller’) Charge — — 74
Turn-On Delay Time — — 30 VDD = 27.5V, ID = 55A,
Rise Time — — 300 VGS = 10V, RG = 2.5Ω
Turn-Off Delay Time — — 65
Fall Time — — 35
Total Inductance — 4.0 — Measured from the center of drain
µA
nA
ns
nH
Ω
= 55V ,VGS=0V
DS
VGS = 0V, TJ =125°C
➃
C
iss
C
oss
C
rss
Input Capacitance — 3600 — VGS = 0V, VDS = 25V
Output Capacitance — 1200 — pF f = 1.0MHz
Reverse Transfer Capacitance — 435 —
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
Continuous Source Current (Body Diode) — — 55*
S
I
Pulse Source Current (Body Diode) ➀ — — 220
SM
V
Diode Forward Voltage — — 1.3 V Tj = 25°C, IS = 55A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 130 ns Tj = 25°C, IF = 55A, di/dt ≤ 100A/µs
rr
Q
* Current is limited by package
Reverse Recovery Charge — — 410 nC VDD ≤ 25V ➃
RR
t
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
on
A
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2 www.irf.com
Junction-to-Case — — 1.0 °C/W
+ LD.
S
Page 3
IRF5N3205
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 1. Typical Output Characteristics
1000
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 150 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output Characteristics
2.0
55A
I =
D
°
T = 25 C
J
T = 150 C
100
D
I , Drain-to-Source Current (A)
10
4.0 5.0 6.0 7.0 8.0
V , Gate-to-Source Voltage (V)
GS
J
V = 25V
DS
15
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
°
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
www.irf.com 3
Page 4
IRF5N3205
8000
6000
4000
C, Capacitance (pF)
2000
0
1 10 100
V
=
0V,
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
C
iss
C
oss
C
rss
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
20
I =
55A
D
V = 44V
DS
V = 27V
DS
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 40 80 120 160 200
Q , Total Gate Charge (nC)
G
V = 11V
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
13
100
10
1
SD
I , Reverse Drain Current (A)
0.1
0.4 0.8 1.2 1.6
Fig 7. Typical Source-Drain Diode
°
T = 150 C
J
°
T = 25 C
J
V ,Source-to-Drain Voltage (V)
SD
V = 0 V
GS
100
10
, Drain-to-Source Current (A)
D
Tc = 25°C
I
Tj = 150°C
Single Pulse
1
1 10 100
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
100µs
1
ms
10ms
Forward Voltage
4 www.irf.com
Page 5
100
IRF5N3205
R
D.U.T.
D
+
V
DD
-
V
LIMITED BY PACKAGE
80
R
DS
V
GS
G
60
40
D
I , Drain Current (A)
20
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
thJC
1
D = 0.50
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
0.20
0.10
0.1
0.05
Thermal Response (Z )
0.02
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
P
DM
t
1
1 2
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com 5
Page 6
IRF5N3205
A
15V
DRIVER
+
-
V
DD
R
20V
V
DS
G
V
GS
t
L
.
D.U.T
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
250
TOP
200
150
100
50
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
D
24.6A
35A
55A
°
Fig 12b. Unclamped Inductive Waveforms
Q
G
10V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
D
Fig 13b. Gate Charge Test Circuit
+
V
DS
-
6 www.irf.com
Page 7
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature.
V
= 25 V, Starting TJ = 25°C, L= 0.09mH
DD
Peak IAS = 55A, V
= 10V, RG= 25Ω
GS
Case Outline and Dimensions — SMD-1
I
≤ 55A, di/dt ≤ 217A/µs,
SD
VDD ≤ 55V, TJ ≤ 150°C
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
IRF5N3205
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/02
www.irf.com 7
Loading...