Datasheet irf5m4905 Datasheet

PD - 94155

HEXFET

®

POWER MOSFET

THRU-HOLE (TO-254AA)

Product Summary

Part Number BV

DSS

IRF5M4905 -55V 0.03Ω -35A*

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.

RDS(on) ID

IRF5M4905

55V, P-CHANNEL

TO-254AA

Features:

n Low RDS(on) n Avalanche Energy Ratings n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Light Weight

Absolute Maximum Ratings

Parameter Units

ID @ VGS = -10V, TC = 25°C Continuous Drain Current -35*

ID @ VGS = -10V, TC = 100°C Continuous Drain Current -35*

I

DM

PD @ TC = 25°C Max. Power Dissipation 125 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt ➂ 2.2

T

J

T

STG

* Current is limited by package

For footnotes refer to the last page

Pulsed Drain Current ➀ -140

Linear Derating Factor 1.0 W/°C Gate-to-Source Voltage ±20 V Single Pulse Avalanche Energy ➁ 490 mJ Avalanche Current ➀ -35 A Repetitive Avalanche Energy ➀ 12.5 mJ

Operating Junction -55 to 150 Storage Temperature Range Lead Temperature 300 (0.063in./1.6mm from case for 10s) Weight 9.3 (Typical) g

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A

V/ns

o

C

03/26/01

IRF5M4905

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BV

DSS

∆BV

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

LS + L

C

iss

C

oss

C

rss

DSS

D

Drain-to-Source Breakdown Voltage -55 — — V VGS = 0V, ID = -250µA

/∆TJTemperature Coefficient of Breakdown — -0.053 — V/°C Reference to 25°C, ID = -1.0mA

Voltage Static Drain-to-Source On-State — — 0.03 Ω VGS = -10V, ID = -35A Resistance Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -250µA Forward Transconductance 18 — — S ( )VDS = -25V, IDS = -35A ➃ Zero Gate Voltage Drain Current — — -25 V

— — -250 VDS = -44V,

Gate-to-Source Leakage Forward — — -100 VGS = -20V Gate-to-Source Leakage Reverse — — 100 VGS = 20V Total Gate Charge — — 195 VGS =-10V, ID = -35A Gate-to-Source Charge — — 45 n C VDS = -44V Gate-to-Drain (‘Miller’) Charge — — 75 Turn-On Delay Time — — 35 VDD = -28V, ID = -35A, Rise Time — — 165 VGS =-10V, RG = 2.5Ω Turn-Off Delay Time — — 95 Fall Time — — 130 Total Inductance — 6.8 — Measured from drain lead (6mm /

Input Capacitance — 3570 — VGS = 0V, VDS = -25V Output Capacitance — 1310 — p F f = 1.0MHz Reverse Transfer Capacitance — 505 —

Ω

µA

nA

ns

nH

0.25in. from package ) to source

➃

= -55V ,VGS=0V

DS

VGS = 0V, TJ =125°C

lead (6mm/0.25in. from pacakge

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions

I

Continuous Source Current (Body Diode) — — -35*

S

I

Pulse Source Current (Body Diode) ➀ — — -140

SM

V

Diode Forward Voltage — — -1.6 V Tj = 25°C, IS = -35A, VGS = 0V ➃

SD

t

Reverse Recovery Time — — 120 n s Tj = 25°C, IF = -35A, di/dt ≥ 100A/µs

rr

Q

* Current is limited by package

Reverse Recovery Charge — — 365 nC VDD ≤ -30V ➃

RR

t

Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L

on

A

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

R

thJC

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

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Junction-to-Case — — 1.0 °C/W

+ LD.

S

IRF5M4905

1000

100

10

D

-I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

-15V

-10V

-8.0V

-7.0V

-6.0V

-5.5V



-5.0V

BOTTOM

-4.5V

20µs PULSE WIDTH



T = 25 C

J

-V , Drain-to-Source Voltage (V)

DS

°

Fig 1. Typical Output Characteristics

1000

100

10

D

-I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

-15V

-10V

-8.0V

-7.0V

-6.0V

-5.5V



-5.0V

BOTTOM

-4.5V

20µs PULSE WIDTH



T = 150 C

J

-V , Drain-to-Source Voltage (V)

DS

°

Fig 2. Typical Output Characteristics

2.0

-35A

I =



D

°

T = 25 C



GS

J

°

T = 150 C



J

V = -25V

DS

15



20µs PULSE WIDTH

100

10

D

-I , Drain-to-Source Current (A)

1

4.0 5.0 6.0 7.0 8.0 9.0 10.0

-V , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature( C)

J



Fig 4. Normalized On-Resistance

V =

GS

°

-10V

Vs. Temperature

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IRF5M4905

7000

6000

5000

4000

3000

C, Capacitance (pF)

2000

1000

0

1 10 100

V

=

0V, C

C C

iss



oss



rss

f = 1MHz

+ C + C

C SHORTED

GS

C

=

iss gs gd , ds

C

=

rss gd



C

=

oss ds gd

C



C

-V , Drain-to-Source Voltage (V)

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

20

I =

-35A

D



V =-44V

DS

V =-28V

DS

16

12

8

4

GS

-V , Gate-to-Source Voltage (V)

0

0 40 80 120 160 200

Q , Total Gate Charge (nC)

G



V =-11V

DS

FOR TEST CIRCUIT



SEE FIGURE

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

13

OPERATION IN THIS AREA LIMITED BY RDS(on)

100

°

T = 150 C



J

10

°

T = 25 C



1

SD

I , Reverse Drain Current (A)

0.1

0.2 0.8 1.4 2.0 2.6

V ,Source-to-Drain Voltage (V)

SD

J

V = 0 V



GS

Fig 7. Typical Source-Drain Diode

100

1

ms

0ms

10

, Drain-to-Source Current (A)

D

Tc = 25°C

-I

Tj = 150°C Single Pulse

1

110100

-V

, Drain-toSource Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRF5M4905

60



LIMITED BY PACKAGE

50

40

30

20

D

-I , Drain Current (A)

10

0

25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

10

R

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

D

D.U.T.

Fig 10a. Switching Time Test Circuit

V

GS

10%

90% V

DS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

-

+

V

DD

thJC

1

D = 0.50

0.20

0.10

0.1

0.05

Thermal Response (Z )

0.02

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE



(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t



2. Peak T = P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

P

DM

t

1



1 2

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF5M4905

(BR)

L

D.U.T

I

AS

0.01

p

DRIVER

Ω

15V

V

DD

R

-20V

V

DS

G

V

GS

t

Fig 12a. Unclamped Inductive Test Circuit

I

AS

t

p

V

DSS

1250

TOP

1000

A

750

500

250

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting T , Junction Temperature ( C)

J



BOTTOM

I

D

-15.7A

-22A

-35A

°

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

Q

G

-10V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

-12V

12V

V

GS

Fig 13b. Gate Charge Test Circuit

50KΩ

.2µF

.3µF

-3mA

Current Sampling Resistors

V

DS

+

D.U.T.

I

G

I

D

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Footnotes:

 Repetitive Rating; Pulse width limited by

maximum junction temperature.

 V

= -25 V, Starting TJ = 25°C, L= 0.8mH

DD

Peak IAS = -35A, V

= -10V, RG= 25Ω

GS

 I

VDD ≤ -55V, TJ ≤ 150°C

 Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Case Outline and Dimensions — TO-254AA

≤ -35A, di/dt ≤ -230 A/µs,

SD

IRF5M4905

0.12 [.005]

1.27 [.050]

1.02 [.040]

B

R 1.52 [.060]

4.06 [.160]

3.56 [.140]

123

13.84 [.545]

13.59 [.535]

20.32 [.800]

20.07 [.790]

1.14 [.045] 3X

0.89 [.035]

0.36 [.014]

3.78 [.149]

3.53 [.139] A

17.40 [.685]

16.89 [.665]

31.40 [1.235]

30.35 [1.195]

17.40 [.685]

16.89 [.665]

3.81 [.150]

NOTE S:

2X

1. DIMENSIONING & T OLERANCING PER ASME Y14.5M-1994.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES ].

3. CONTROLLING DIMENSION: INCH.

4. CONFORMS TO JE DEC OUTLI NE TO-254AA.

BA

6.60 [.260]

6.32 [.249]

13.84 [.545]

13.59 [.535]

PIN ASSIGNMENTS

1 = DRAIN 2 = SOURCE 3 = GATE

0.12 [.005]

1.27 [.050]

1.02 [.040]

B

3.81 [.150]

22.73 [.895]

21.21 [.835]

3.78 [.149]

3.53 [.139]

17.40 [.685]

16.89 [.665]

4.82 [.190]

3.81 [.150]

A

3.81 [.150] 2X

123

13.84 [.545]

13.59 [.535]

20.32 [.800]

20.07 [.790]

1.14 [.045]

3X

0.89 [.035]

0.36 [.014]

BA

6.60 [.260]

6.32 [.249]

13.84 [.545]

13.59 [.535]

CAUTION

BERYLLIA WARNING PER MIL-PRF-19500

Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 03/01

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