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PD-93977
HEXFET
®
POWER MOSFET
SURFACE MOUNT (LCC-28)
Product Summary
Part Number BV
IRF5EA1310 100V 0.036Ω 23A
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse
circuits.
RDS(on) ID
DSS
IRF5EA1310
100V, N-CHANNEL
LCC-28
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 23
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 15
I
DM
PD @ TC = 25°C Max. Power Dissipation 38 W
V
GS
E
AS
I
AR
E
AR
dv/d t Peak Diode Recovery dv/dt ➂ 3.6
T
J
T
STG
For footnotes refer to the last page
Pulsed Drain Current ➀ 92
Linear Derating Factor 0.3 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 73 mJ
Avalanche Current ➀ 22 A
Repetitive Avalanche Energy ➀ 3.8 mJ
Operating Junction -55 to 150
Storage Temperature Range
Package Mounting Surface Temperature 300 (for 5 s)
Weight 0.89 g
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A
V/ns
o
C
1019/00
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IRF5EA1310
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
∆BV
R
V
g
I
DSS
I
GSS
I
GSS
Q
Q
Q
t
d(on)
t
r
t
d(off)
t
f
LS + L
Ciss
C
C
DSS
DSS
DS(on)
GS(th)
fs
g
gs
gd
D
oss
rss
Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 250µA
/∆TJTemperature Coefficient of Breakdown — 0.11 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
Static Drain-to-Source On-State — — 0.036 Ω VGS = 10V, ID = 22A
Resistance
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 14 — — S ( )VDS = 25V, IDS = 22A ➃
Zero Gate Voltage Drain Current — — 25 VDS= 100V ,VGS=0V
— — 250 VDS = 80V,
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 110 VGS =10V, ID = 22A
Gate-to-Source Charge — — 15 nC VDS = 80V
Gate-to-Drain (‘Miller’) Charge — — 5 8
Tu rn-On Delay Time — — 26 VDD = 50V, ID = 22A
Rise Time — — 176 RG = 3.9Ω
Tu rn-Off Delay Time — — 75
Fall Time — — 130
Total Inductance — 6.1 —
Input Capacitance — 2022 — VGS = 0V , VDS = 25V
Output Capacitance — 471 — pF f = 1.0MHz
Reverse Transfer Capacitance — 254 —
Ω
µA
nA
ns
nH
➃
VGS = 0V, TJ = 125°C
Measured from the center of
drain pad to center of source pad
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
Continuous Source Current (Body Diode) — — 23
S
I
Pulse Source Current (Body Diode) ➀ —— 92
SM
VSDDiode Forward Voltage — — 1.3 V Tj = 25°C, IS = 22A, VGS = 0V ➃
t
Reverse Recovery Time — — 270 nS Tj = 25°C, IF = 22A, di/dt ≤ 100A/µs
rr
Q
Reverse Recovery Charge — — 1.8 µCV
RR
t
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
on
A
≤ 25V ➃
DD
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
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Junction-to-Case — — 3.3
°C/W
+ LD.
S
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IRF5EA1310
1000
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 1. Typical Output Characteristics
1000
1000
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 150 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output Characteristics
2.5
23A
I =
D
°
T = 25 C
100
10
1
D
I , Drain-to-Source Current (A)
0.1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V , Gate-to-Source Voltage (V)
GS
J
T = 150 C
°
J
15
V = 25V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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IRF5EA1310
4000
3500
3000
2500
2000
1500
C, Capacitance (pF)
1000
500
0
1 10 100
V
=
0V,
C
C
C
iss
oss
rss
f = 1MHz
+ C
+ C
C SHORTED
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
C
C
C
V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
20
I =
22A
D
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 20 40 60 80 100 120 140
Q , Total Gate Charge (nC)
G
V = 80V
DS
V = 50V
DS
V = 20V
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
13
°
T = 150 C
J
10
°
T = 25 C
J
1
SD
I , Reverse Drain Current (A)
V = 0 V
0.1
0.2 0.7 1.2 1.7 2.2
V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
10
1ms
1
, Drain-to-Source Current (A)
D
Tc = 25°C
I
Tj = 150°C
Single Pulse
0.1
1 10 100 1000
V
, Drain-toSource Voltage (V)
DS
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRF5EA1310
25
20
15
10
D
I , Drain Current (A)
5
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
R
V
DS
V
GS
R
G
D
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
D = 0.50
thJC
1
0.20
0.10
0.05
0.02
0.1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
P
DM
t
1
1 2
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF5EA1310
A
15V
DRIVER
+
-
R
G
20V
10V
V
DS
t
L
D.U.T
.
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)D SS
t
p
150
TOP
120
90
V
DD
60
30
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature( C)
J
BOTTOM
I
D
10A
14A
22A
°
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Q
G
10V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Same Type as D.U.T.
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
+
-
D
Fig 13b. Gate Charge Test Circuit
V
DS
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Footnotes:
IRF5EA1310
Repetitive Rating; Pulse width limited by
maximum junction temperature.
V
= 25 V, Star ting TJ = 25°C, L=0.3mH
DD
Peak IAS = 22A, RG= 25Ω
Case Outline and Dimensions — LCC-28
I
≤ 22A, di/dt ≤ 360 A/µs,
SD
VDD ≤ 100V, TJ ≤ 150°C
Pulse width ≤ 400 µs; Duty Cycle ≤ 2%
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Data and specifications subject to change without notice. 10/00
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