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PD - 93999
IRF5852
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
Description
These N-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two
die per package, the IRF5852 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and R
reduction enables an increase in current-handling
capability.
DS(on)
V
DSS
R
DS(on)
max (
Ω)Ω)
Ω) I
Ω)Ω)
D
20 V 0.090@VGS = 4.5V 2.7A
0.120@VGS = 2.5V 2.2A
TSOP-6
G1
S2
G2
1
2
3
Top View
6D1
5
4
S1
D2
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 2.7
ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 2.2 A
I
DM
PD @TA = 25°C Power Dissipation 0.96
PD @TA = 70°C Power Dissipation 0.62
V
GS
T
J, TSTG
Drain- Source Voltage 20 V
Pulsed Drain Current 11
W
Linear Derating Factor 7.7 mW/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 130 °C/W
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IRF5852
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– – –– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.016 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– –– – 0.090 VGS = 4.5V, ID = 2.7A
––– –– – 0.120 VGS = 2.5V, ID = 2.2A
Ω
Gate Threshold Voltage 0.60 ––– 1.25 V VDS = VGS, ID = 250µA
Forward Transconductance 5.2 ––– ––– S VDS = 10V, ID = 2.7A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V
––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 70°C
µA
nA
Total Gate Charge ––– 4.0 6.0 ID = 2.7A
Gate-to-Source Charge ––– 0.95 ––– nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– 0.88 ––– VGS = 4.5V
Turn-On Delay Time ––– 6.6 ––– VDD = 10V
Rise Time ––– 1. 2 ––– ID = 1.0A
Turn-Off Delay Time ––– 15 ––– RG = 6.2Ω
ns
Fall Time ––– 2. 4 ––– VGS = 4.5V
Input Capacitance ––– 400 ––– VGS = 0V
Output Capacitance ––– 48 ––– pF VDS = 15V
Reverse Transfer Capacitance ––– 32 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
–––
–––
–––
–––
0.96
11
A
G
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 0.96A, VGS = 0V
Reverse Recovery Time ––– 25 38 ns TJ = 25°C, IF = 0.96A
Reverse Recovery Charge ––– 6.5 9.8 nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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D
S
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IRF5852
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM
1.5V
1.50V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 1. Typical Output Characteristics
100
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM
1.5V
1.50V
20µs PULSE WIDTH
T = 150 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output Characteristics
2.0
I =
D
2.7A
°
T = 25 C
10
1
D
I , Drain-to-Source Current (A)
0.1
1.5 2.0 2.5 3.0
V , Gate-to-Source Voltage (V)
GS
J
V = 15V
DS
20µs PULSE WIDTH
T = 150 C
J
Fig 3. Typical Transfer Characteristics
°
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
4.5V
GS
°
Vs. Temperature
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IRF5852
600
500
400
300
200
C, Capacitance (pF)
100
0
1 10 100
V
=
0V,
GS
C
=
issgsgd , ds
C
=
rssgd
C
=
oss dsgd
C
iss
C
oss
C
rss
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
I =
2.7A
D
8
6
4
2
GS
V , Gate-to-Source Voltage (V)
0
0 2 4 6 8
Q , Total Gate Charge (nC)
G
V = 16V
DS
V = 10V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
°
T = 150 C
J
1
°
T = 25 C
SD
I , Reverse Drain Current (A)
0.1
0.4 0.6 0.8 1.0 1.2 1.4
V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
10
100us
1
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
A
T T= 150 C
Single Pulse
0.1
0.1 1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
1ms
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRF5852
3.0
2.5
2.0
1.5
1.0
D
I , Drain Current (A)
0.5
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
R
D.U.T.
D
+
V
DD
-
V
DS
V
GS
R
G
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
°
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
100
thJA
D = 0.50
0.20
0.10
10
0.05
P
0.02
0.01
1
Thermal Response (Z )
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
DM
t
1 2
1
t
2
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF5852
)
0.14
Ω
0.12
0.10
ID = 2.7A
0.08
, Drain-to -Source On Resistance (
DS(on)
0.06
R
2.0 3.0 4.0 5.0 6.0 7.0 8.0
V
Gate -to -Source Voltage (V)
GS,
Fig 11. Typical On-Resistance Vs. Gate
Voltage
)
0.30
Ω
0.20
V
= 2.5V
GS
0.10
, Drain-to-Source On Resistance (
V
= 4.5V
DS (on)
R
0.00
GS
024681012
ID , Drain Current (A)
Fig 12. Typical On-Resistance Vs. Drain
Current
Current Regulator
Same Type as D.U.T.
Q
G
4.5 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
12V
V
GS
Fig 13b. Gate Charge Test Circuit
50KΩ
.2µF
.3µF
3mA
Current Sampling Resistors
+
V
D.U.T .
I
G
I
DS
-
D
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IRF5852
1.2
1.0
0.8
, Variace ( V )
GS(th)
V
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
ID = 250µA
Fig 14. Threshold Voltage Vs. Tempera-
ture
24
20
16
12
Power (W)
8
4
0
0.001 0.010 0.100 1.000 10.000
Time (sec)
Fig 15. Typical Power Vs. Time
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IRF5852
TSOP-6 Package Outline
TSOP-6 Part Marking Information
EXAMPLE: T HIS IS AN SI 3443DV
PART NUMBER
WAFE R L OT
NUMBER C ODE
PART NUMBER C OD E REFEREN CE:
3A = SI3443DV
3B = IRF5800
3C = IRF5850
3D = IRF5851
3E = IRF5852
3I = IRF5805
3J = IR F5806
DATE CODE EXAMPLES:
YW W = 9603 = 6C
YW W = 9632 = FF
3A
XXXX
BOT TOM
YW
TOP
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WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
DATE
CODE
2005
5
1996
6
1997
7
1998
8
9
1999
2000
0
W W = (2 7-52 ) IF PRECEDED BY A LETTER
Y
2005
E
1996
F
1997
G
1998
H
J
1999
2000
K
WORK
WEEK
WORK
WEEK
01
02
03
04
24
25 Y
26 Z
27
28
29
30
50
51 Y
WYEAR Y
A2001 1
B2002 2
C2003 3
D2004 4
X
WYEAR
A2001 A
B2002 B
C2003 C
D2004 D
X
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TSOP-6 Tape & Reel Information
IRF5852
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
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