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l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
Top View
PD - 93947
IRF5850
HEXFET® Power MOSFET
V
= -20V
DSS
R
DS(on)
= 0.135Ω
This Dual TSOP-6 package is ideal for applications where
printed circuit board space is at a premium and where
TSOP-6
maximum functionality is required. With two die per
package, the IRF5850 can provide the functionality of two
SOT-23 packages in a smaller footprint. Its unique thermal
design and R
reduction enables an increase in
DS(on)
current-handling capability.
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -2.2
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -1.8 A
I
DM
PD @TA = 25°C Power Dissipation 0.96
PD @TA = 70°C Power Dissipation 0.62
V
GS
T
J, TSTG
Drain- Source Voltage -20 V
Pulsed Drain Current -9.0
W
Linear Derating Factor 7.7 mW/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 130 °C/W
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IRF5850
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -20 ––– –– – V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.011 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.135 VGS = -4.5V, ID = -2.2A
––– ––– 0.220 VGS = -2.5V, ID = -1.9A
Ω
Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA
Forward Transconductance 3.5 ––– ––– S VDS = -10V, ID = -2.2A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– – –– 100 VGS = 12V
––– ––– -1.0 VDS = -16V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C
µA
nA
Total Gate Charge ––– 3.6 5.4 ID = -2.2A
Gate-to-Source Charge ––– 0.66 ––– nC VDS = -10V
Gate-to-Drain ("Miller") Charge ––– 0.83 ––– VGS = -4.5V
Turn-On Delay Time ––– 8.3 ––– VDD = -10V
Rise Time ––– 14 ––– ID = -1.0A
Turn-Off Delay Time ––– 31 ––– RG = 6.0Ω
ns
Fall Time ––– 28 ––– VGS = -4.5V
Input Capacitance ––– 320 ––– VGS = 0V
Output Capacitance ––– 56 ––– pF VDS = -15V
Reverse Transfer Capacitance ––– 40 ––– ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
–––
–––
–––
–––
-0.96
-9.0
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -0.96A, VGS = 0V
Reverse Recovery Time ––– 23 35 ns TJ = 25°C, IF = -0.96A
Reverse Recovery Charge ––– 7.7 12 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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D
S
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IRF5850
100
10
1
0.1
D
-I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
VGS
TOP
-7.0V
-5.0V
-4.5V
-2.5V
-2.0V
-1.8V
-1.5V
BOTTOM
-1.2V
-1.2V
20µs PULSE WIDTH
-V , Drain-to-Source Voltage (V)
DS
°
T = 25 C
J
Fig 1. Typical Output Characteristics
10
°
T = 25 C
J
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
-7.0V
-5.0V
-4.5V
-2.5V
-2.0V
-1.8V
-1.5V
BOTTOM
-1.2V
-1.2V
-V , Drain-to-Source Voltage (V)
DS
20µs PULSE WIDTH
T = 150 C
J
°
Fig 2. Typical Output Characteristics
2.0
-2.2A
I =
D
°
T = 150 C
J
1
D
-I , Drain-to-Source Current (A)
V = -15V
DS
0.1
1.2 1.6 2.0 2.4 2.8
-V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
-4.5V
GS
°
Vs. Temperature
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IRF5850
500
400
300
200
C, Capacitance (pF)
100
0
1 10 100
V
=
0V,
GS
C
=
issgsgd , ds
C
=
rssgd
C
=
oss dsgd
C
iss
C
oss
C
rss
-V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
10
I =
-2.2A
D
8
6
4
2
GS
-V , Gate-to-Source Voltage (V)
0
0 2 4 6 8
Q , Total Gate Charge (nC)
G
V =-16V
DS
V =-10V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
1
°
T = 25 C
J
SD
-I , Reverse Drain Current (A)
V = 0 V
0.1
0.4 0.6 0.8 1.0 1.2 1.4
-V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
10
100us
1
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
A
T T= 150 C
Single Pulse
0.1
0.1 1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
1ms
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRF5850
2.5
2.0
1.5
1.0
D
-I , Drain Current (A)
0.5
0.0
25 50 75 100 125 150
TJ , Junction Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Junction Temperature
1000
R
D.U.T.
D
-
+
V
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
DD
100
thJA
D = 0.50
0.20
0.10
10
0.05
P
0.02
0.01
1
Thermal Response (Z )
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
DM
t
1 2
1
t
2
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF5850
)
0.24
Ω
0.20
)
0.40
Ω
0.30
0.16
0.12
ID = -2.2A
, Drain-to -Source On Resistance (
DS(on)
0.08
R
2.0 3.0 4.0 5.0 6.0 7.0
-V
Gate -to -Source Voltage (V)
GS,
Fig 11. Typical On-Resistance Vs. Gate
Voltage
Q
G
Q
GS
Q
GD
V
= -2.5V
GS
0.20
, Drain-to-Source On Resistance (
V
= -4.5V
GS
DS (on)
R
0.10
0246810
-ID , Drain Current (A)
Fig 12. Typical On-Resistance Vs. Drain
Current
Current Regulator
Same T ype as D.U.T.
50KΩ
.2µF
12V
.3µF
D.U.T .
V
DS
+
V
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
GS
-3mA
I
G
Current Sampling Resistors
I
D
Fig 13b. Gate Charge Test Circuit
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IRF5850
1.0
0.8
ID = -250µA
, Variace ( V )
0.6
GS(th)
-V
0.4
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
24
20
16
12
Power (W)
8
4
0
0.001 0.010 0.100 1.000 10.000
Time (sec)
Fig 15. Typical Power Vs. Time
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IRF5850
TSOP-6 Package Outline
TSOP-6 Part Marking Information
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TSOP-6 Tape & Reel Information
IRF5850
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 7/00
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