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l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
Description
These P-channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery and
load management applications.
PD -94198
IRF5810
HEXFET® Power MOSFET
V
DSS
R
DS(on)
max (m
-20V 90@VGS = -4.5V -2.9A
135@VGS = -2.5V -2.3A
Ω)Ω)
Ω) I
Ω)Ω)
D
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two
die per package, the IRF5810 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and R
reduction enables an increase in current-handling
capability.
DS(on)
TSOP-6
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -2.9
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -2.3 A
I
DM
PD @TA = 25°C Power Dissipation 0.96
PD @TA = 70°C Power Dissipation 0.62
V
GS
T
J, TSTG
Drain- Source Voltage -20 V
Pulsed Drain Current -11
Linear Derating Factor 0.008 mW/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C
W
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 130 °C/W
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IRF5810
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.011 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– 60 90 VGS = -4.5V, ID = -2.9
––– 87 135 VGS = -2.5V, ID = -2.3A
mΩ
Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA
Forward Transconductance 5.4 ––– ––– S VDS = -10V, ID = -2.9A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
––– ––– -1.0 VDS = -16V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 70°C
µA
nA
Total Gate Charge ––– 6.4 9.6 ID = -2.9A
Gate-to-Source Charge ––– 1.2 1.8 nC VDS = -10V
Gate-to-Drain ("Miller") Charge ––– 1.7 2.6 VGS = -4.5V
Turn-On Delay Time ––– 8.2 ––– VDD = -10V
Rise Time ––– 14 ––– ID = -1.0A
Turn-Off Delay Time ––– 62 ––– RG = 6.0Ω
ns
Fall Time ––– 53 ––– VGS = -4.5V
Input Capacitance ––– 650 – –– VGS = 0V
Output Capacitance ––– 110 ––– pF VDS = -16V
Reverse Transfer Capacitance ––– 86 ––– ƒ = 1kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
–––
–––
–––
–––
-1.0
-11
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V
Reverse Recovery Time ––– 110 170 ns TJ = 25°C, IF = -1.0A
Reverse Recovery Charge ––– 130 200 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on 1 in square Cu board
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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D
S
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IRF5810
100
10
1
0.1
D
-I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
VGS
TOP
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM
-1.2V
-1.2V
20µs PULSE WIDTH
T = 25 C
J
-V , Drain-to-Source Voltage (V)
DS
°
Fig 1. Typical Output Characteristics
100.0
)
(Α
10.0
TJ = 25°C
TJ = 150°C
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM
-1.2V
-1.2V
20µs PULSE WIDTH
-V , Drain-to-Source Voltage (V)
DS
°
T = 150 C
J
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
-2.9A
I =
D
1.0
, Drain-to-Source Current
D
-I
0.1
1.0 1.5 2.0 2.5 3.0
-VGS, Gate-to-Source Voltage (V)
V
= -15V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
-4.5V
GS
°
Vs. Temperature
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IRF5810
gsg
4
1000
800
600
400
V
=
0V,
GS
C
=
iss
C
=
rssgd
C
=
oss dsgd
C
iss
f = 1MHz
C
+ C
C SHORTED
C
C
d , ds
+ C
C, Capacitance (pF)
200
0
1 10 100
C
oss
C
rss
-V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
I =
-2.9A
D
V =-16V
DS
V =-10V
DS
GS
8
6
4
2
-V , Gate-to-Source Voltage (V)
0
0 2 4 6 8 10 12
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
1
SD
-I , Reverse Drain Current (A)
0.1
0.4 0.6 0.8 1.0 1.2 1.
°
T = 150 C
J
°
T = 25 C
J
-V ,Source-to-Drain Voltage (V)
SD
V = 0 V
Fig 7. Typical Source-Drain Diode
GS
10
1
, Drain-to-Source Current (A)
D
Tc = 25°C
-I
Tj = 150°C
Single Pulse
0.1
0 1 10 100
-V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
100µsec
1msec
10msec
Forward Voltage
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IRF5810
3.0
2.5
2.0
1.5
1.0
D
-I , Drain Current (A)
0.5
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
R
D.U.T.
D
-
+
V
DD
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
V
10%
d(on)tr
GS
°
90%
V
DS
t
d(off)tf
Fig 10b. Switching Time Waveforms
100
thJA
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
1
Thermal Response (Z )
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
P
DM
t
1 2
1
t
2
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF5810
)
0.10
Ω
0.09
0.08
0.07
0.06
, Drain-to -Source On Resistance (
0.05
DS(on)
0.04
R
2.0 4.0 6.0 8.0 10.0
-V
Gate -to -Source Voltage (V)
GS,
ID = -2.9A
Fig 12. Typical On-Resistance Vs. Gate
Voltage
)
0.25
Ω
0.20
0.15
V
GS
= -2.5V
0.10
V
= -4.5V
GS
, Drain-to-Source On Resistance (
0.05
DS (on)
R
0.00
0246810
-ID , Drain Current (A)
Fig 13. Typical On-Resistance Vs. Drain
Current
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
Q
GS
V
G
Q
GD
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
12V
.2µF
V
GS
.3µF
D.U.T .
-3mA
I
G
Current Sampling Resistors
V
DS
+
I
D
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IRF5810
1.1
1.0
0.9
0.8
0.7
Gate threshold Voltage (V)
0.6
GS(th)
0.5
-V
0.4
-75 -50 -25 0 25 50 75 100 125 150
ID = -250µA
TJ , Temperature ( °C )
Fig 15. Threshold Voltage Vs. Temperature
60
50
40
30
Power (W)
20
10
0
0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000
Time (sec)
Fig 16. Typical Power Vs. Time
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IRF5810
D
2004
D
X
J
2005
1996
1997
1998
1999
2000
E
F
G
H
K
Y
2005
1996
1997
1998
2000
9
8
7
6
5
PART NUMBER
TOP
Y = YEAR
W = WEEK
WORK
WEEK
WORK
A = SI3443DV
PART NUMBER CODE REFERENCE:
25
Y
51
Y
26
Z
B = IRF5800
C = IRF5850
D = IRF5851
E = IRF5852
J = IRF5806
I = IRF5805
LOT
CODE
K = IRF5810
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
01
02
03
04
24
W
YEAR Y
A
2001 1
B
2002 2
C
2003
3
D
2004
4
X
1999
0
W = (27-52) IF PRECEDED BY A LETTER
WEEK
27
28
29
30
50
W
YEAR
A
2001 A
B
2002 B
C
2003
C
TSOP-6 Package Outline
TSOP-6 Part Marking Information
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TSOP-6 Tape & Reel Information
IRF5810
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 6/01
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