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● Trench Technology
● Ultra Low On-Resistance
● P-Channel MOSFET
● Available in Tape & Reel
PD - 93997
IRF5806
HEXFET® Power MOSFET
V
DSS
-20V 86mΩ @V GS = -4.5V - 4.0A
R
max I
DS(on)
D
147mΩ @VGS = -2.5V - 3.0A
Description
New trench HEXFET® Power MOSFETs from
1
D
A
6
D
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
2
D
5
D
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
3
G
4
S
with an extremely efficient and reliable device for use
in battery and load management applications.
Top View
Micro6
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.0
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -3.3 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 2.0 W
PD @TA = 70°C Maximum Power Dissipation 1.3 W
Linear Derating Factor 0.02 W/°C
V
GS
TJ , T
STG
Drain-Source Voltage -20 V
Pulsed Drain Current -16.5
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
R
θ JA
Maximum Junction-to-Ambient 62.5 °C/W
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IRF5806
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆ V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -20 –– – –– – V VGS = 0V, ID = -250µA
/∆ T
Breakdown Voltage Temp. Coefficient ––– 0.011 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– 47.1 86 VGS = -4.5V, ID = -4.0A
––– 67.5 147 VGS = -2.5V, ID = -3.0A
mΩ
Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA
Forward Transconductance 6.4 ––– ––– S VDS = -10V, ID = -4.0A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– – –– 100 VGS = 12V
––– ––– -15 VDS = -16V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 70°C
µA
nA
Total Gate Charge ––– 8 .3 11.4 ID = -4.0A
Gate-to-Source Charge ––– 1.2 ––– nC VDS = -16V
Gate-to-Drain ("Miller") Charge ––– 2.6 ––– VGS = -4.5V
Turn-On Delay Time ––– 6.2 9.3 VDD = -10V, VGS = -4.5V
Rise Time ––– 27 41 ID = -1.0A
Turn-Off Delay Time ––– 94 140 RG = 6.0Ω
ns
Fall Time ––– 126 190 RD = 10Ω
Input Capacitance ––– 594 ––– VGS = 0V
Output Capacitance ––– 114 ––– pF VDS = -15V
Reverse Transfer Capacitance ––– 87 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– –––
–––
–––
-2.0
-16.5
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V
Reverse Recovery Time ––– 116 174 ns TJ = 25°C, IF = -2.0A
Reverse Recovery Charge ––– 90 135 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square Copper board, t
≤ 10sec.
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
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D
S
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IRF5806
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
-7.5V
-5.0V
-4.5V
-3.5V
-3.0V
-2.7V
-2.0V
BOTTOM
-1.5V
-1.50V
20µs PULSE WIDTH
T = 25 C
J
-V , Drain-to-Source Voltage (V)
DS
°
Fig 1. Typical Output Characteristics
100
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
-7.5V
-5.0V
-4.5V
-3.5V
-3.0V
-2.7V
-2.0V
BOTTOM
-1.5V
-1.50V
20µs PULSE WIDTH
T = 150 C
J
-V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output Characteristics
2.0
-4.0A
I =
D
1.5
°
T = 25 C
J
10
D
-I , Drain-to-Source Current (A)
1
1.0 1.5 2.0 2.5 3.0
-V , Gate-to-Source Voltage (V)
GS
°
T = 150 C
J
V = -15V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
-4.5V
GS
°
Vs. Temperature
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IRF5806
1000
800
600
400
C, Capacitance (pF)
200
0
1 10 100
V
=
0V,
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
C
iss
C
oss
C
rss
-V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
I =
-4.0A
D
8
6
4
2
GS
-V , Gate-to-Source Voltage (V)
0
0 4 8 12 16
Q , Total Gate Charge (nC)
G
V =-16V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
10
°
T = 150 C
J
1
°
T = 25 C
SD
-I , Reverse Drain Current (A)
0.1
0.2 0.6 1.0 1.4
-V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
10
100us
1
D
-I , Drain Current (A) I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
0.1
0.1 1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
1ms
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRF5806
5.0
4.0
3.0
2.0
D
-I , Drain Current (A)
1.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
R
D.U.T.
D
-
+
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
V
DD
D = 0.50
thJA
0.20
10
0.10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
P
DM
t
1
1 2
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF5806
)
0.20
Ω
0.15
0.10
ID = -4.0A
0.05
, Drain-to -Source On Resistance (
DS(on)
0.00
R
1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5
-V
Gate -to -Source Voltage (V)
GS,
Fig 12. Typical On-Resistance Vs.
Gate Voltage
)
0.20
Ω
0.16
0.12
VGS = -2.5V
0.08
, Drain-to-Source On Resistance (
0.04
DS ( on )
0.00
R
0 5 10 15 20
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
VGS = -4.5V
Current Regulator
Same Type as D.U.T.
50KΩ
.2µ F
10 V
Q
G
Q
GS
V
G
Q
GD
12V
V
GS
.3µ F
D.U.T.
-3mA
I
G
Current Sampling Resistors
I
V
DS
+
D
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
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Package Outline
Micro6
IRF5806
3.00 (.118
2.80 (.111
1.75 (.068
1.50 (.060
-A -
0.95 ( .0375
2X
1.30 (.051
0.90 (.036
-C -
NOTES :
1. DIM ENSIONING & TO LER ANC ING PER A NS I Y14.5M-1982.
2. CO NTRO LLING D IMENSION : MILLIME TER .
3. DIMENSIONS ARE SHOW N IN MILLIMETERS (INC HES).
6 5 4
1 2 3
0.15 (.006
M AX.
-B -
3.00 (.118
2.60 (.103
0.50 (.019
6X
0.35 (.014
0.15 (.006 ) M C A S B S
1.45 (.057
0.90 (.036
0.10 (.004
6 SURFACES
Part Marking Information
Micro6
LEAD ASSIGN MENT S R EC O M ME N D E D FO OT PRINT
O O
0 -10
2X 0.95 (.0375
2.20 (.087
0.60 (.023
0.10 (.004
6X 0.65 (.025
0.20 (.007
6X
0.09 (.004
DD
6 5 4
1 2 3
DD
S
G
6X (1.06 (.042
EXAMPLE : THIS IS AN IRLMS6702
PART NU MBE R
WAFER LOT
NUMBER CODE
BOTTOM
PART NU MBE R EXAM PLES:
2A = IRLMS1902
2B = IRLMS1503
2C = IRLMS6702
2D = IRLMS5703
DATE
CODE
TOP
DATE CODE EXAMPLES:
YW W = 9603 = 6C
YW W = 9632 = FF
YEAR Y WEEK W
2001 1 01 A
2002 2 02 B
2003 3 03 C
2004 4 04 D
2005 5
1996 6
1997 7
1998 8
1999 9
2000 0 24 X
25 Y
26 Z
W O R K W EEK = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDER YEAR
W O RK W EEK = ( 27-52) IF PRECEDED BY A LETTER
WORK
YEA R Y WEE K W
2001 A 27 A
2002 B 28 B
2003 C 29 C
2004 D 30 D
2005 E
1996 F
1997 G
1998 H
1999 J
2000 K 50 X
51 Y
52 Z
WORK
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IRF5806
Tape & Reel Information
Micro6
8mm
4mm
NOTES :
1. OUTLINE CONFOR MS TO EIA-481 & EIA-541.
178.00
7.008
MAX.
NOTES:
1. CONTROL LING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
9.90 ( .390
8.40 ( .331
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice.10/00
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