Datasheet IRF5806 Datasheet (International Rectifier)

● Trench Technology

● Ultra Low On-Resistance

● P-Channel MOSFET

● Available in Tape & Reel

PD - 93997

IRF5806

HEXFET® Power MOSFET

V

DSS

-20V 86mΩ@VGS = -4.5V -4.0A

R

max I

DS(on)

D

147mΩ@VGS = -2.5V -3.0A

Description

New trench HEXFET® Power MOSFETs from

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D

A

6

D

International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the

2

D

5

D

ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer

3

G

4

S

with an extremely efficient and reliable device for use in battery and load management applications.

Top View

Micro6







Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.0 ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -3.3 A I

DM

PD @TA = 25°C Maximum Power Dissipation 2.0 W PD @TA = 70°C Maximum Power Dissipation 1.3 W

Linear Derating Factor 0.02 W/°C

V

GS

TJ , T

STG

Drain-Source Voltage -20 V

Pulsed Drain Current -16.5

Gate-to-Source Voltage ± 20 V

Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 62.5 °C/W

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10/04/00

IRF5806

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -20 –– – –– – V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.011 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– 47.1 86 VGS = -4.5V, ID = -4.0A  ––– 67.5 147 VGS = -2.5V, ID = -3.0A 

mΩ

Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA Forward Transconductance 6.4 ––– ––– S VDS = -10V, ID = -4.0A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V Gate-to-Source Reverse Leakage ––– – –– 100 VGS = 12V

––– ––– -15 VDS = -16V, VGS = 0V ––– ––– -25 VDS = -16V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge ––– 8 .3 11.4 ID = -4.0A Gate-to-Source Charge ––– 1.2 ––– nC VDS = -16V Gate-to-Drain ("Miller") Charge ––– 2.6 ––– VGS = -4.5V Turn-On Delay Time ––– 6.2 9.3 VDD = -10V, VGS = -4.5V Rise Time ––– 27 41 ID = -1.0A Turn-Off Delay Time ––– 94 140 RG = 6.0Ω

ns

Fall Time ––– 126 190 RD = 10Ω  Input Capacitance ––– 594 ––– VGS = 0V Output Capacitance ––– 114 ––– pF VDS = -15V Reverse Transfer Capacitance ––– 87 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol (Body Diode) showing the Pulsed Source Current integral reverse (Body Diode)  p-n junction diode.

––– –––

–––

-2.0

-16.5

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V  Reverse Recovery Time ––– 116 174 ns TJ = 25°C, IF = -2.0A Reverse Recovery Charge ––– 90 135 nC di/dt = -100A/µs



Notes:

 Repetitive rating; pulse width limited by

 When mounted on 1 inch square Copper board, t

≤ 10sec.

max. junction temperature.

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

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D

S

IRF5806

100

10

1

D

-I , Drain-to-Source Current (A)

0.1

0.1 1 10 100

VGS

TOP

-7.5V

-5.0V

-4.5V

-3.5V

-3.0V

-2.7V

-2.0V

BOTTOM

-1.5V

-1.50V

20µs PULSE WIDTH T = 25 C

J

-V , Drain-to-Source Voltage (V)

DS

°

Fig 1. Typical Output Characteristics

100

10

1

D

-I , Drain-to-Source Current (A)

0.1

0.1 1 10 100

VGS

TOP

-7.5V

-5.0V

-4.5V

-3.5V

-3.0V

-2.7V

-2.0V

BOTTOM

-1.5V

-1.50V

20µs PULSE WIDTH T = 150 C

J

-V , Drain-to-Source Voltage (V)

DS

°

Fig 2. Typical Output Characteristics

2.0

-4.0A

I =

D

1.5

°

T = 25 C

J

10

D

-I , Drain-to-Source Current (A)

1

1.0 1.5 2.0 2.5 3.0

-V , Gate-to-Source Voltage (V)

GS

°

T = 150 C

J

V = -15V

DS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

-4.5V

GS

°

Vs. Temperature

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IRF5806

1000

800

600

400

C, Capacitance (pF)

200

0

1 10 100

V

=

0V,

GS

C

=

iss gs gd , ds

C

=

rss gd

C

=

oss ds gd

C

iss

C

oss

C

rss

-V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C C C

C SHORTED

+ C

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

10

I =

-4.0A

D

8

6

4

2

GS

-V , Gate-to-Source Voltage (V)

0

0 4 8 12 16

Q , Total Gate Charge (nC)

G

V =-16V

DS

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10us

10

°

T = 150 C

J

1

°

T = 25 C

SD

-I , Reverse Drain Current (A)

0.1

0.2 0.6 1.0 1.4

-V ,Source-to-Drain Voltage (V)

SD

J

V = 0 V

GS

Fig 7. Typical Source-Drain Diode

10

100us

1

D

-I , Drain Current (A)I , Drain Current (A)

°

= 25 C

C

T T= 150 C Single Pulse

0.1

0.1 1 10 100

°

J

-V , Drain-to-Source Voltage (V)

DS

1ms

10ms

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRF5806

5.0

4.0

3.0

2.0

D

-I , Drain Current (A)

1.0

0.0 25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

100

R

D.U.T.

D

-

+

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

GS

10%

90% V

DS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

V

DD

D = 0.50

thJA

0.20

10

0.10

0.05

0.02

0.01

1

SINGLE PULSE

(THERMAL RESPONSE)

Thermal Response (Z )

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10

t , Rectangular Pulse Duration (sec)

1

J DM thJA A

P

DM

t

1

1 2

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF5806

)

0.20

Ω

0.15

0.10

ID = -4.0A

0.05

, Drain-to -Source On Resistance (

DS(on)

0.00

R

1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5

-V

Gate -to -Source Voltage (V)

GS,

Fig 12. Typical On-Resistance Vs.

Gate Voltage

)

0.20

Ω

0.16

0.12

VGS = -2.5V

0.08

, Drain-to-Source On Resistance (

0.04

DS ( on )

0.00

R

0 5 10 15 20

-ID , Drain Current ( A )

Fig 13. Typical On-Resistance Vs.

Drain Current

VGS = -4.5V

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

10 V

Q

G

Q

GS

V

G

Q

GD

12V

V

GS

.3µF

D.U.T.

-3mA

I

G

Current Sampling Resistors

I

V

DS

+

D

Charge

Fig 14a. Basic Gate Charge Waveform

Fig 14b. Gate Charge Test Circuit

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Package Outline

)



Micro6





IRF5806

3.00 (.118

2.80 (.111

1.75 (.068

1.50 (.060

-A -

0.95 ( .0375 2X

1.30 (.051

0.90 (.036

-C -

NOTES :

1. DIM ENSIONING & TO LER ANC ING PER A NS I Y14.5M-1982.

2. CO NTRO LLING D IMENSION : MILLIME TER .

3. DIMENSIONS ARE SHOW N IN MILLIMETERS (INC HES).

6 5 4

1 2 3

0.15 (.006 M AX.

-B -

3.00 (.118

2.60 (.103

0.50 (.019

6X

0.35 (.014

0.15 (.006 ) M C A S B S

1.45 (.057

0.90 (.036

0.10 (.004

6 SURFACES

Part Marking Information



Micro6





LEAD ASSIGN MENT S R EC O M ME N D E D FO OT PRINT

O O

0 -10

2X 0.95 (.0375

2.20 (.087

0.60 (.023

0.10 (.004

6X 0.65 (.025

0.20 (.007

6X

0.09 (.004

DD

6 5 4 1 2 3

DD

S

G

6X (1.06 (.042

EXAMPLE : THIS IS AN IRLMS6702

PART NU MBE R

WAFER LOT NUMBER CODE

BOTTOM

PART NU MBE R EXAM PLES: 2A = IRLMS1902 2B = IRLMS1503 2C = IRLMS6702 2D = IRLMS5703

DATE CODE

TOP

DATE CODE EXAMPLES: YW W = 9603 = 6C YW W = 9632 = FF

YEAR Y WEEK W 2001 1 01 A

2002 2 02 B 2003 3 03 C 2004 4 04 D 2005 5 1996 6 1997 7 1998 8 1999 9 2000 0 24 X 25 Y 26 Z

W O R K W EEK = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDER YEAR W O RK W EEK = ( 27-52) IF PRECEDED BY A LETTER

WORK

YEA R Y WEE K W 2001 A 27 A

2002 B 28 B 2003 C 29 C 2004 D 30 D 2005 E 1996 F 1997 G 1998 H 1999 J 2000 K 50 X 51 Y 52 Z

WORK

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IRF5806

)

(

)

Tape & Reel Information



Micro6





8mm

4mm

NOTES :

1. OUTLINE CONFOR MS TO EIA-481 & EIA-541.

178.00

7.008

MAX.

NOTES:

1. CONTROL LING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

9.90 ( .390

8.40 ( .331

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IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936

Data and specifications subject to change without notice.10/00

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