Datasheet IRF5805 Datasheet (International Rectifier)

l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge

PD -94029

IRF5805

HEXFET® Power MOSFET

V

DSS

-30V 0.098@VGS = -10V -3.8A

R

max I

DS(on)

D

0.165@VGS = -4.5V -3.0A

Description

These P-channel MOSFETs from International Rectifier

1

D

A

6

D

utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

The TSOP-6 package with its customized leadframe produces a HEXFET

®

power MOSFET with R

DS(on)

D

G

2

3

Top V iew

5

D

4

S

TSOP-6

60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and R

DS(on)

reduction enables a current-handling increase of nearly 300% compared to the SOT-23.

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.8 ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -3.0 A I

DM

PD @TA = 25°C Maximum Power Dissipation 2W P

= 70°C Maximum Power Dissipation 1.28 W

D @TA

Linear Derating Factor 0.02 W/°C

V

GS

TJ , T

STG

Drain-Source Voltage -30 V

Pulsed Drain Current -15

Gate-to-Source Voltage ± 20 V

Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 62.5 °C/W

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11/6/00

IRF5805

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -30 –– – –– – V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.098 VGS = -10V, ID = -3.8A  ––– ––– 0.165 VGS = -4.5V, ID = -3.0A 

Ω

Gate Threshold Voltage -1.0 ––– -2.5 V VDS = VGS, ID = -250µA Forward Transconductance 3.5 ––– ––– S VDS = -10V, ID = -3.8A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

––– ––– -15 VDS = -24V, VGS = 0V ––– ––– -25 VDS = -24V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge ––– 11 17 ID = -3.8A Gate-to-Source Charge ––– 2.3 ––– nC VDS = -15V Gate-to-Drain ("Miller") Charge ––– 1.5 ––– VGS = -10V Turn-On Delay Time ––– 11 17 VDD = -15V, VGS = -10V Rise Time ––– 14 21 ID = -1.0A Turn-Off Delay Time ––– 90 1 35 RG = 6.0Ω

ns

Fall Time ––– 49 74 RD = 15Ω  Input Capacitance ––– 511 ––– VGS = 0V Output Capacitance ––– 79 ––– pF VDS = -25V Reverse Transfer Capacitance ––– 50 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol (Body Diode) showing the Pulsed Source Current integral reverse (Body Diode)  p-n junction diode.

––– –––

–––

-2.0

-15

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V  Reverse Recovery Time ––– 19 29 ns TJ = 25°C, IF = -2.0A Reverse Recovery Charge ––– 16 24 nC di/dt = -100A/µs



Notes:

 Repetitive rating; pulse width limited by

 Surface mounted on 1 in square Cu board, t ≤ 10sec.

max. junction temperature.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

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D

S

IRF5805

100

10

1

0.1

, Drain-to-Source Current (A)

D

-I

-2.5V 20µs PULSE WIDTH

Tj = 25°C

0.01

0.1 1 10 100

-VDS , Drain-to-Source Voltage (V)

100

VGS

TOP -10.0V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V

-2.7V BOTTOM -2.5V

100

10

1

-2.5V

0.1

, Drain-to-Source Current (A)

D

-I

20µs PULSE WIDTH Tj = 150°C

0.01

0.1 1 10 100

-VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

-3.8A

I =

D

VGS

TOP -10.0V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V

-2.7V BOTTOM -2.5V

1.5

10

T = 150 C

1

D

-I , Drain-to-Source Current (A)

0.1

2.0 3.0 4.0 5.0 6.0

°

J

°

T = 25 C

J

V = -15V

DS

20µs PULSE WIDTH

-V , Gate-to-Source Voltage (V)

GS

Fig 3. Typical Transfer Characteristics

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

-10V

Vs. Temperature

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IRF5805

800

600

400

C, Capacitance(pF)

200

0

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

+ Cgd, C

gs

gd

ds

+ C

gd

iss

C

rss

C

oss

Ciss

Coss Crss

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

SHORTED

ds

16

I =

-3.8A

D

12

8

4

GS

V =-24V

DS

V =-15V

DS

-V , Gate-to-Source Voltage (V)

0

0 2 4 6 8 10 12 14

Q , Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10us

10

T = 150 C

1

SD

-I , Reverse Drain Current (A)

0.1

0.0 0.5 1.0 1.5 2.0 2.5 3.0

°

J

°

T = 25 C

J

V = 0 V

GS

-V ,Source-to-Drain Voltage (V)

SD

Fig 7. Typical Source-Drain Diode

10

1

D

-I , Drain Current (A)I , Drain Current (A)

°

= 25 C

C

T T= 150 C Single Pulse

0.1

0.1 1 10 100

°

J

-V , Drain-to-Source Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

100us

1ms

10ms

Forward Voltage

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IRF5805

4.0

3.0

2.0

D

-I , Drain Current (A)

1.0

0.0 25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

100

R

D.U.T.

D

-

+

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

GS

10%

90% V

DS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

DD

D = 0.50

thJA

Thermal Response(Z )

0.20

10

0.10

0.05

0.02

0.01

1

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJA A

P

DM

t

1 2

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF5805

0.500

)

0.450

0.400

0.350

0.300

0.250

0.200

0.150

, Drain-to -Source On Resistance (Ω

0.100

DS(on)

R

0.050

2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

-V

Gate -to -Source Voltage (V)

GS,

ID = -3.8A

Fig 12. Typical On-Resistance Vs.

Gate Voltage

0.400

)

Ω

0.300

VGS = -4.5V

0.200

VGS = -10V

0.100

, Drain-to-Source On Resistance (

DS ( on )

R

0.000 0 5 10 15 20

-ID , Drain Current ( A )

Fig 13. Typical On-Resistance Vs.

Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

Q

G

Q

GS

V

G

Q

GD

Charge

Fig 14a. Basic Gate Charge Waveform

Fig 14b. Gate Charge Test Circuit

12V

.2µF

V

GS

.3µF

D.U.T .

-3mA

I

G

Current Sampling Resistors

V

DS

+

I

D

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IRF5805

2.5

2.3

2.1

( V )

GS(th)

1.9

-V

1.7

1.5

-75 -50 -25 0 25 50 75 100 125 150

TJ , Temperature ( °C )

ID = -250µA

Fig 15. Typical Vgs(th) Vs.

Junction Temperature

30

25

20

15

Power (W)

10

5

0

0.001 0.010 0.100 1.000 10.000 100.000

Time (sec)

Fig 16. Typical Power Vs. Time

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IRF5805

TSOP-6 Package Outline

TSOP-6 Part Marking Information

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TSOP-6 Tape & Reel Information

IRF5805

IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111

IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936

Data and specifications subject to change without notice. 11/00

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