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PD - 94333
IRF5804
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
Description
These P-channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery and
load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
®
power MOSFET with R
DS(on)
DS(on)
V
DSS
R
DS(on)
max (m
Ω)Ω)
Ω) I
Ω)Ω)
-40V 198@VGS = -10V -2.5A
334@VGS = -4.5V -2.0A
D
D
G
1
2
3
Top V iew
A
6
D
5
D
4
S
TSOP-6
D
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -2.5
ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -2.0 A
I
DM
PD @TA = 25°C Power Dissipation 2.0
PD @TA = 70°C Power Dissipation 1.3
V
GS
T
J, TSTG
Drain- Source Voltage -40 V
Pulsed Drain Current -10
W
Linear Derating Factor 0.016 mW/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 62.5 °C/W
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10/04/01
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IRF5804
FOR REVIEW ONLY
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -40 ––– ––– VVGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– ––– 198 VGS = -10V, ID = -2.5
––– ––– 334 V
mΩ
= -4.5V, ID = -2.0A
GS
Gate Threshold Voltage -1.0 ––– -3.0 V VDS = VGS, ID = -250µA
Forward Transconductance 2.5 ––– ––– SVDS = -10V, ID = -2.5A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
––– ––– -10 VDS = -32V, VGS = 0V
––– ––– -25 VDS = -32V, VGS = 0V, TJ = 70°C
µA
nA
Total Gate Charge ––– 5.7 8.5 ID = -2.5A
Gate-to-Source Charge ––– 2.8 4.2 nC VDS = -20V
Gate-to-Drain ("Miller") Charge ––– 2.1 3.2 VGS = -10V
Turn-On Delay Time ––– 19 ––– VDD = -20V
Rise Time ––– 430 ––– ID = -1.0A
Turn-Off Delay Time ––– 100 ––– RG = 6.0Ω
ns
Fall Time ––– 64 ––– VGS = -10V
Input Capacitance ––– 680 ––– VGS = 0V
Output Capacitance ––– 60 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 44 ––– ƒ = 1kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
–––
–––
–––
–––
-2.5
-10
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V
Reverse Recovery Time ––– 24 36 ns TJ = 25°C, IF = -2.0A
Reverse Recovery Charge ––– 32 49 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on 1 in square Cu board
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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D
S
Page 3
FOR REVIEW ONLY
IRF5804
100
10
1
0.1
, Drain-to-Source Current (A)
D
-I
VGS
TOP -10V
-7.0V
-5.0V
-4.5V
-4.0V
-3.7V
-3.5V
BOTTOM -3.0V
-3.0V
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
10.00
)
(Α
TJ = 150°C
100
10
1
, Drain-to-Source Current (A)
D
-I
VGS
TOP -10V
-7.0V
-5.0V
-4.5V
-4.0V
-3.7V
-3.5V
BOTTOM -3.0V
-3.0V
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
1.5
-2.5A
I =
D
1.00
1.0
TJ = 25°C
(Normalized)
, Drain-to-Source Current
D
-I
0.10
3.0 3.5 4.0 4.5 5.0
V
= -25V
DS
20µs PULSE WIDTH
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
-
V =
-10V
GS
°
Vs. Temperature
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IRF5804
FOR REVIEW ONLY
10000
1000
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
+ Cgd, C
gs
gd
+ C
ds
C
C
iss
rss
oss
gd
Ciss
100
C, Capacitance(pF)
Coss
Crss
10
1 10 100
-
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
SHORTED
ds
12
I =
2.5A
D
10
8
6
4
GS
2
-V , Gate-to-Source Voltage (V)
0
0 2 4 6 8 10
Q , Total Gate Charge (nC)
G
V = 32V
DS
V = 20V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
°
T = 150 C
J
1
°
T = 25 C
J
SD
-I , Reverse Drain Current (A)
V = 0 V
0.1
0.4 0.6 0.7 0.9 1.1 1.2 1.4
-V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
10
1
, Drain-to-Source Current (A)
D
Tc = 25°C
-I
Tj = 150°C
Single Pulse
0.1
1 10 100 1000
Fig 8. Maximum Safe Operating Area
OPERATION IN THIS AREA
LIMITED BY RDS(on)
-V
, Drain-toSource Voltage (V)
DS
100µsec
1msec
10msec
Forward Voltage
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FOR REVIEW ONLY
IRF5804
2.5
2.0
1.5
1.0
D
-I , Drain Current (A)
0.5
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
R
D.U.T.
D
-
+
V
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
DD
D = 0.50
thJA
Thermal Response (Z )
0.20
10
0.10
0.05
0.02
0.01
1
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
P
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF5804
)
0.40
Ω
0.35
0.30
0.25
FOR REVIEW ONLY
0.400.40
0.40
)
Ω
0.35
0.300.30
0.30
0.25
V
= -4.5V
GS
0.20
, Drain-to -Source On Resistance (
0.15
DS(on)
0.10
R
4.0 5.0 6.0 7.0 8.0 9.0 10.0
ID = -2.5A
-V
Gate -to -Source Voltage (V)
GS,
Fig 12. Typical On-Resistance Vs.
Gate Voltage
Q
G
Q
GS
Q
GD
0.200.20
0.20
, Drain-to-Source On Resistance (
0.15
DS (on)
R
0.10
0.10
1 2 3 4 5 6 7 8 9 10
-ID , Drain Current (A)
V
GS
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
D.U.T.
= -10V
V
+
DS
V
V
G
Charge
Fig 14a. Basic Gate Charge Waveform
GS
-3mA
I
G
Current Sampling Resistors
I
D
Fig 14b. Gate Charge Test Circuit
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FOR REVIEW ONLY
IRF5804
3.0
2.5
ID = -250µA
2.0
Gate threshold Voltage (V)
GS(th)
V
1.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
70
60
50
40
30
Power (W)
20
10
0
1.00 10.00 100.00 1000.00
Time (sec)
Fig 16. Typical Power Vs. Time
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Page 8
IRF5804
TSOP-6 Package Outline
FOR REVIEW ONLY
TSOP-6 Part Marking Information
W = (1-26) IF PRE CEDED BY LAST DIGIT OF CALENDA R YEAR
WORK
WEEK
5
6
7
8
9
0
WORK
Y
WEEK
E
F
G
H
J
K
PART NUMB ER
TOP
PART NUMBER CODE REFE RENCE:
A = SI3443DV
B = IRF 5800
C = IRF5850
D = IRF5851
E = IRF5852
I = IRF5805
J = IRF5806
K = IR F 5810
L = IRF5804
Y = YEAR
W = WEEK
2005
LOT
CODE
1996
1997
1998
1999
2000
W = (27- 52) IF P R E CEDED BY A LETTER
2005
1996
1997
1998
1999
2000
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01
02
03
04
24
25 Y
26 Z
27
28
29
30
50
51 Y
WYEAR Y
A2001 1
B2002 2
C2003 3
D2004 4
X
WYEAR
A2001 A
B2002 B
C2003 C
D2004 D
X
Page 9
FOR REVIEW ONLY
TSOP-6 Tape & Reel Information
IRF5804
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/01
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