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SMPS MOSFET
PD- 94086
IRF5802
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
V
DSS
150V 1.2
R
DS(on)
ΩΩ
Ω@V
ΩΩ
max I
= 10V 0.9A
GS
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
to Simplify Design, (See
OSS
1GD
2
D
6
D
5
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
3
SD4
TSOP-6
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 0.9
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 0.7 A
I
DM
PD @TA = 25°C Power Dissipation 2.0 W
V
GS
dv/dt Peak Diode Recovery dv/dt 7.1 V/ns
T
J
T
STG
Pulsed Drain Current 7.0
Linear Derating Factor 0.02 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
D
°C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 62.5 °C/W
Notes through are on page 8
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1/23/01
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IRF5802
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 3.0 ––– VGS = 0V, VDS = 0V to 120V
oss
Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.19 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance ––– ––– 1.2 Ω VGS = 10V, ID = 0.54A
Gate Threshold Voltage 3.0 ––– 5 .5 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 120V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 150V, VGS = 0V
µA
nA
VGS = -30V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 0.55 ––– ––– S VDS = 50V, ID = 0.54A
Total Gate Charge ––– 4.5 6.8 ID = 0.54A
Gate-to-Source Charge ––– 1.0 1.5 nC VDS = 120V
Gate-to-Drain ("Miller") Charge ––– 2.4 3.6 VGS = 10V,
Turn-On Delay Time ––– 6.0 ––– VDD = 75V
Rise Time ––– 1.6 ––– ID = 0.54A
Turn-Off Delay Time ––– 7 .5 ––– RG = 6.0Ω
ns
Fall Time ––– 9.2 ––– VGS = 10V
Input Capacitance ––– 88 ––– VGS = 0V
Output Capacitance ––– 26 ––– VDS = 25V
Reverse Transfer Capacitance ––– 7.7 ––– pF ƒ = 1.0MHz
Output Capacitance ––– 110 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 14 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 9.5 mJ
Avalanche Current ––– 0.9 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
1.8
18
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 0.54A, VGS = 0V
Reverse Recovery Time – –– 46 69 ns TJ = 25°C, IF = 0.54A
Reverse RecoveryCharge ––– 55 83 nC di/dt = 100A/µs
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D
S
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IRF5802
100
10
1
0.1
D
I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
VGS
TOP
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM
6.0V
6.0V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 1. Typical Output Characteristics
10
°
T = 25 C
J
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM
6.0V
20µs PULSE WIDTH
T = 150 C
J
V , Drain-to-Source Voltage (V)
DS
6.0V
°
Fig 2. Typical Output Characteristics
2.5
I =
D
0.9A
T = 150 C
J
1
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.1
6 8 10 12 14
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
°
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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IRF5802
1000
100
10
C, Capacitance(pF)
1
1 10 100 1000
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
+ Cgd, C
gs
gd
+ C
ds
gd
iss
C
rss
C
Ciss
Coss
Crss
VDS, Drain-to-Source Voltage (V)
oss
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
SHORTED
ds
20
I =
0.54A
D
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 1 2 3 4 5 6
V = 120V
DS
V = 75V
DS
V = 30V
DS
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
°
T = 150 C
J
1
°
T = 25 C
SD
I , Reverse Drain Current (A)
0.1
0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
10
1
0.1
TA = 25°C
, Drain-to-Source Current (A)
D
I
TJ = 150°C
Single Pulse
0.01
1 10 100 1000
V
, Drain-toSource Voltage (V)
DS
100µsec
1msec
10msec
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRF5802
1.0
0.8
0.6
0.4
D
I , Drain Current (A)
0.2
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
R
D.U.T.
D
+
V
DD
-
V
DS
V
GS
R
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
°
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
D = 0.50
thJA
Thermal Response (Z )
0.20
10
0.10
0.05
0.02
0.01
1
0.1
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
P
DM
t
1 2
1
t
2
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF5802
(BR)
A
)
2.80
Ω
2.40
2.00
1.60
1.20
, Drain-to -Source On Resistance (
DS(on)
0.80
R
ID = 0.54A
6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0
V
Gate -to -Source Voltage (V)
GS,
Fig 12. Typical On-Resistance Vs. Gate
Voltage
Current Regulator
Same Type as D.U.T.
.2µF
12V
V
GS
50KΩ
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
V
GS
+
V
DS
-
I
D
V
G
QGSQ
Q
G
GD
Charge
)
6.00
Ω
4.00
V
10V
2.00
GS =
( on) , Drain-to-Source On Resistance (
DS
0.00
R
0 2 4 6
ID , Drain Current (A)
Fig 13. Typical On-Resistance Vs. Drain
Current
25
TOP
20
BOTTOM
I
D
0.40A
0.70A
0.90A
Fig 14a&b. Basic Gate Charge Test Circuit
15
and Waveform
10
15V
V
t
p
I
AS
DSS
R
V
G
20V
L
DS
D.U.T
I
AS
Ω
0.01
t
p
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
DRIVER
+
V
DD
-
5
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
°
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Page 7
TSOP-6 Package Outline
IRF5802
TSOP-6 Part Marking Information
EXAMPLE: THIS IS AN SI3443DV
PART NUMBER
WAFE R L OT
NUMBER CODE
PART NUMBER CODE REFERENCE:
3A = SI3443DV
3B = IRF5800
3C = IRF5850
3D = IRF5851
3E = IRF5852
3I = IRF5805
3J = IRF5806
DATE CODE EXAM PLES:
YW W = 9603 = 6C
YW W = 9632 = FF
3A
XXXX
BOT TOM
YW
TOP
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WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
WORK
WYEAR Y
5
6
7
8
9
0
Y
E
F
G
H
J
K
WEEK
01
02
03
04
24
25 Y
26 Z
WORK
WEEK
27
28
29
30
50
51 Y
A2001 1
B2002 2
C2003 3
D2004 4
X
WYEAR
A2001 A
B2002 B
C2003 C
D2004 D
X
DATE
CODE
2005
1996
1997
1998
1999
2000
W W = (27-52) IF PRECEDED BY A LETTER
2005
1996
1997
1998
1999
2000
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IRF5802
TSOP-6 Tape & Reel Information
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
= 25°C, L = 23mH
J
= 0.54A.
AS
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
C
eff. is a fixed capacitance that gives the same charging time
oss
as C
I
TJ ≤ 150°C
while V
oss
≤ 0.54A, di/dt ≤ 89A/µs, V
SD
is rising from 0 to 80% V
DS
DD
≤ V
(BR)DSS
DSS
,
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.1/00
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