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SMPS MOSFET
PD-94044
IRF5801
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
V
DSS
R
DS(on)
200V 2.2
max I
ΩΩ
Ω 0.6A
ΩΩ
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
to Simplify Design, (See
OSS
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D
D
G
1
2
3
Top V iew
A
6
D
5
D
4
S
TSOP-6
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 0.6
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 0.48 A
I
DM
PD @TA = 25°C Power Dissipation 2.0 W
V
GS
dv/dt Peak Diode Recovery dv/dt 9.6 V/ns
T
J
T
STG
Pulsed Drain Current 4.8
Linear Derating Factor 0.016 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
D
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJA
Junction-to-Ambient ––– 62.5 °C/W
Notes through are on page 8
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01/17/01
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IRF5801
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 26 ––– VGS = 0V, VDS = 0V to 160V
oss
Drain-to-Source Breakdown Voltage 200 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.26 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance ––– ––– 2.2 Ω VGS = 10V, ID = 0.36A
Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 200V, VGS = 0V
µA
= 30V
GS
nA
V
= -30V
GS
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 0.44 ––– ––– SVDS = 50V, ID = 0.36A
Total Gate Charge ––– 3.9 ––– ID = 0.36A
Gate-to-Source Charge ––– 0.8 ––– nC VDS = 160V
Gate-to-Drain ("Miller") Charge ––– 2.2 ––– VGS = 10V
Turn-On Delay Time ––– 6.5 ––– VDD = 100V
Rise Time ––– 8.0 ––– ID = 0.36A
Turn-Off Delay Time ––– 8.8 ––– RG = 53Ω
ns
Fall Time ––– 19 ––– VGS = 10V
Input Capacitance ––– 88 ––– VGS = 0V
Output Capacitance ––– 18 ––– VDS = 25V
Reverse Transfer Capacitance ––– 6.3 ––– pF ƒ = 1.0MHz
Output Capacitance ––– 102 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 8.4 ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 9.9 mJ
Avalanche Current ––– 0.6 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
1.8
4.8
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 0.36A, VGS = 0V
Reverse Recovery Time ––– 45 ––– ns TJ = 25°C, IF = 0.36A
Reverse RecoveryCharge ––– 54 ––– nC di/dt = 100A/µs
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D
S
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IRF5801
10
1
VGS
TOP 15.0V
12.0V
10.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
6.0V
0.1
, Drain-to-Source Current (A)
D
I
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
10
10
1
0.1
, Drain-to-Source Current (A)
D
I
VGS
TOP 15.0V
12.0V
10.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
20µs PULSE WIDTH
Tj = 150°C
0.01
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I =
D
0.6A
6.0V
2.5
°
T = 150 C
J
1
°
T = 25 C
J
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.1
6 7 8 9 10 11 12
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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IRF5801
160
120
80
C, Capacitance(pF)
40
0
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
V
= 0V, f = 1 MHZ
GS
C
= C
iss
rss
oss
gs
= C
= C
C
C
Ciss
Coss
Crss
+ Cgd, C
gd
+ C
ds
gd
SHORTED
ds
20
I =
0.36A
D
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 1 2 3 4 5
Q , Total Gate Charge (nC)
G
V = 160V
DS
V = 100V
DS
V = 40V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T = 150 C
1
SD
I , Reverse Drain Current (A)
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0
°
J
T = 25 C
J
V = 0 V
GS
V ,Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
1
°
D
I , Drain Current (A)I , Drain Current (A)
0.1
°
= 25 C
C
T T= 150 C
Single Pulse
0.01
1 10 100 1000
°
J
V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
10us
100us
1ms
10ms
Forward Voltage
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0.6
(
)
0.5
0.4
0.3
V
DS
V
GS
R
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
IRF5801
R
D
D.U.T.
+
V
-
DD
0.2
D
I , Drain Current (A)
0.1
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Case Temperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
thJC
Thermal Response(Z )
0.20
10
0.10
0.05
0.02
0.01
1
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
SINGLE PULSE
THERMAL RESPONSE
Notes:
1. Duty factor D =t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
P
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF5801
(BR)
A
12.000
)
Ω
10.000
8.000
VGS = 10V
6.000
4.000
, Drain-to-Source On Resistance (
2.000
DS ( on )
R
0.000
012345
ID , Drain Current ( A )
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
.2µF
12V
V
GS
50KΩ
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
V
GS
+
V
DS
-
I
D
V
G
QGSQ
Q
G
GD
Charge
2.500
)
Ω
2.250
2.000
ID = 0.6A
1.750
, Drain-to -Source On Resistance (
DS(on)
R
1.500
6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0
V
Gate -to -Source Voltage (V)
GS,
Fig 13. On-Resistance Vs. Gate Voltage
25
TOP
20
BOTTOM
I
D
0.4A
0.7A
0.9A
Fig 14a&b. Basic Gate Charge Test Circuit
15
and Waveform
10
15V
V
t
p
I
AS
DSS
V
R
G
20V
L
DS
D.U.T
I
AS
Ω
0.01
t
p
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
DRIVER
+
V
DD
-
5
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
°
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TSOP-6 Package Outline
IRF5801
TSOP-6 Part Marking Information
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Page 8
IRF5801
TSOP-6 Tape & Reel Information
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
= 25°C, L = 27mH
J
= 0.36A.
AS
When mounted on 1 inch square copper board, t < 10sec.
C
eff. is a fixed capacitance that gives the same charging time
oss
as C
I
while V
oss
≤ 0.36A, di/dt ≤ 93A/µs, V
SD
is rising from 0 to 80% V
DS
DD
≤ V
(BR)DSS
.
DSS
, TJ ≤ 150°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/00
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