Datasheet IRF5800 Datasheet (International Rectifier)

PD - 93850

IRF5800

HEXFET® Power MOSFET

l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge

1

D

2

D

3

G

A

6

D

V

= -30V

R

DS(on)

DSS

= 0.085Ω

5

D

4

S

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Description

These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

The TSOP-6 package with its customized leadframe produces a HEXFET

®

power MOSFET with R

DS(on)

60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and R enables a current-handling increase of nearly 300%

DS(on)

reduction

TSOP-6

compared to the SOT-23.

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.0 ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -3.2 A I

DM

PD @TA = 25°C Power Dissipation 2.0 PD @TA = 70°C Power Dissipation 1.3

E

AS

V

GS

T

J, TSTG

Drain- Source Voltage -30 V

Pulsed Drain Current  -32

Linear Derating Factor 0.016 W/°C Single Pulse Avalanche Energy 20.6 mJ Gate-to-Source Voltage ± 20 V Junction and Storage Temperature Range -55 to + 150 °C

W

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 62.5 °C/W

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2/8/00

IRF5800

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -30 ––– – –– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.085 VGS = -10V, ID = -4.0A  ––– ––– 0.150 VGS = -4.5V, ID = -3.0A 

Ω

Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA Forward Transconductance 3.5 ––– ––– S VDS = -10V, ID = -4.0A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

––– ––– -1.0 VDS = -24V, VGS = 0V ––– ––– -5.0 VDS = -24V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge ––– 11.4 17 ID = -4.0A Gate-to-Source Charge ––– 2.3 ––– nC VDS = -16V Gate-to-Drain ("Miller") Charge ––– 2.2 ––– VGS = -10V  Turn-On Delay Time ––– 11.4 17 VDD = -15V, VGS = -10V Rise Time ––– 11 17 ID = -1.0A Turn-Off Delay Time ––– 24 36 RG = 6.0Ω

ns

Fall Time ––– 14 20 RD = 15Ω,  Input Capacitance ––– 535 ––– VGS = 0V Output Capacitance ––– 94 ––– pF VDS = -25V Reverse Transfer Capacitance ––– 68 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol (Body Diode) showing the Pulsed Source Current integral reverse (Body Diode)  p-n junction diode.

–––

-2.0

-32

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V  Reverse Recovery Time ––– 19 28 n s TJ = 25°C, IF = -2.0A Reverse Recovery Charge ––– 16 24 nC di/dt = -100A/µs



Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 Surface mounted on FR-4 board, t ≤ 5sec.  Starting T

RG = 25Ω, I

= 25°C, L = 2.5mH

J

= -4.0A. (See Fig 10 )

AS

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D

S

IRF5800

100

10

1

TOP

BOTTOM

VGS

-15V

-10V

-7.0V

-5.5V

-4.5V

-4.0V

-3.5V

-2.7V

-2.70V

0.1

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 25 C

0.01

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

J

Fig 1. Typical Output Characteristics

100

10

1

TOP

BOTTOM

VGS

-15V

-10V

-7.0V

-5.5V

-4.5V

-4.0V

-3.5V

-2.7V

-2.70V

0.1

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH

0.01

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

T = 150 C

°

J

Fig 2. Typical Output Characteristics

2.0

I =

D

-4.0A

°

T = 25 C

J

1.5

10

1

D

-I , Drain-to-Source Current (A)

V = -15V

DS

0.1

2.0 3.0 4.0 5.0 6.0 7.0 8.0

-V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

°

T = 150 C

J

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

-10V

Vs. Temperature

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IRF5800

800

600

400

C, Capacitance (pF)

200

0

1 10 100

V

=

0V,

oss

rss

f = 1MHz

C

+ C C C

C

iss

C SHORTED

+ C

GS

C

=

issgsgd , ds

C

=

rssgd

C

=

oss dsgd

C

-V , Drain-to-Source Voltage (V)

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

20

I =

-4.0A

D

16

12

8

4

GS

-V , Gate-to-Source Voltage (V)

0

0 4 8 12 16 20

Q , Total Gate Charge (nC)

G

V = -16V

DS

FOR TEST CIRCUIT

SEE FIGURE

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

13

100

10

1

SD

-I , Reverse Drain Current (A)

0.1

0.4 0.8 1.2 1.6 2.0

Fig 7. Typical Source-Drain Diode

°

T = 150 C

J

°

T = 25 C

J

-V ,Source-to-Drain Voltage (V)

SD

V = 0 V

GS

10

D

-I , Drain Current (A)I , Drain Current (A)

1

°

= 25 C

C

T T= 150 C Single Pulse

0.1 1 10 100

°

J

-V , Drain-to-Source Voltage (V)

DS

10us

100us

1ms

10ms

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRF5800

(

)

4.0

3.0

2.0

D

-I , Drain Current (A)

1.0

0.0 25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

100

50

TOP

40

30

20

10

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting T , Junction Temperature ( C)

J

BOTTOM

Fig 10. Maximum Avalanche Energy

Vs. Drain Current

I

D

-1.8A

-2.5A

-4.0A

°

D = 0.50

thJA

Thermal Response (Z )

0.20

10

0.10

0.05

0.02

0.01

1

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10

SINGLE PULSE

THERMAL RESPONSE

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJA A

1 2

P

DM

t

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF5800

)

0.20

Ω

0.16

0.12

ID = -4.0A

0.08

, Drain-to -Source On Resistance (

DS(on)

0.04

R

2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0

-V

Gate -to -Source Voltage (V)

GS,

Fig 12. Typical On-Resistance Vs.

Gate Voltage

)

0.25

Ω

0.20 V

0.15

0.10

, Drain-to-Source On Resistance (

0.05

DS (on)

R

0.00

0 5 10 15 20

-ID , Drain Current (A)

Fig 13. Typical On-Resistance Vs.

Drain Current

GS

= -4.5V

V

GS

= -10V

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TSOP-6 Package Outline

IRF5800

TSOP-6 Part Marking Information

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IRF5800

TSOP-6 Tape & Reel Information

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105

IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

Data and specifications subject to change without notice. 2/2000

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