Datasheet IRF550A Datasheet (Fairchild Semiconductor)

Advanced Power MOSFET

IRF550A

FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area

Ο

175 Operating Temperature

C

Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower R

: 0.032 (Typ.)

DS(ON)

Ω

µ

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage Continuous Drain Current (T Continuous Drain Current (T

=25 )

C

=100 )

C

Ο

C

Ο

C

Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T

=25 )

C

Ο

C

Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds

T

V

DSS

I

D

I

DM

V E

I

AR

E

dv/dt

P

, T

J

T

GS

AS

AR

D

STG

L

O O

O O O

BV R I

= 100 V

DSS

DS(on)

= 40 A

D

= 0.04

Ω

TO-220

1

2

3

1.Gate 2. Drain 3. Source

100

40

28.3

1

2

1 1

3

160

+

_

640

16.7

6.5

20

40

167

1.11

- 55 to +175

300

V A A

V

mJ

A

mJ

V/ns

W

W/

Ο

C

Ο

C

Thermal Resistance

R

JC

θ

R

CS

θ

R

θ

JA

Characteristic Max. UnitsSymbol Typ.

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

--

0.5

--

0.9

--

62.5

Ο

C

/W

Rev. B

IRF550A

Electrical Characteristics (T

Ο

=25 unless otherwise specified)

C

N-CHANNEL

POWER MOSFET

BV

∆ ∆

BV/ T

V

GS(th)

I

R

DS(on)

C

t

d(on)

t

d(off)

Q Q

DSS

GSS

DSS

g

iss

oss

rss

t

Q

CharacteristicSymbol

Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance

fs

Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time

r

Turn-Off Delay Time Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain(“Miller”) Charge

gd

100

--

2.0

--

Max. UnitsTyp.Min. Test Condition

V

--

0.11

--

27.44 1750

420 185

17 20 80 45 75

13.2

34.8

--

4.0

100

-100 10

100

0.04

--

2270

485 215

50 50

160 100

97

--

V/

nA

µ

pF

ns

nC

V

Ο

V

A

Ω

=0V,ID=250 A

GS

I

=250 A See Fig 7

C

D

V

=5V,ID=250 A

DS

V

=20V

GS

V

=-20V

GS

V

=100V

DS

V

=80V,TC=150

DS

=10V,ID=20A

V

GS

=40V,ID=20A

V

DS

=0V,VDS=25V,f =1MHz

V

GS

See Fig 5

V

=50V,ID=40A,

DD

=6.2

R

G

See Fig 13

V

=80V,VGS=10V,

DS

I

=40A

D

See Fig 6 & Fig 12

µ

Ο

C

4

O

4

O

Ω

4

5

O

4

5

O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

1

O

2

L=0.6mH, I

O

3

I

O

SD

Pulse Test : Pulse Width = 250 s, Duty Cycle 2%

4

O

Essentially Independent of Operating Temperature

5

O

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=40A, VDD=25V, RG=27 , Starting TJ =25

AS

_

µ

40A, di/dt 470A/ s, VDD BV

_

<

_

<

µ

Ω

, Starting TJ =25

DSS

O O

_

<

40

--

1

--

4

--

o

C

o

C

--

135

0.65

160

1.6

--

Integral reverse pn-diode

A

in the MOSFET

V

ns

µ

C

Ο

C

T

=25 ,IS=40A,VGS=0V

J

Ο

C

T

=25 ,IF=40A

J

/dt=100A/ s

di

F

µ

O

4

N-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V Top : 1 5 V

1 0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V Bottom : 4.5 V

-1

GS

10

VDS , Drain-Source Voltage [V]

2

10

1

10

, Drain Current [A]

D

I

0

10

0

@ Notes :

1. 250

2. T

s Pulse Test

µ

= 25 oC

C

IRF550A

2

10

o

175

C

1

10

25 oC

, Drain Current [A]

D

I

0

1

10

2 4 6 8 10

- 55

o

C

VGS , Gate-Source Voltage [V]

@ Notes :

1. V

2. V

3. 250

= 0 V

GS

= 40 V

DS

s Pulse Test

µ

0.06

0.05

]

0.04

Ω

, [

0.03

DS(on)

R

0.02

Drain-Source On-Resistance

0.01

0.00 0 25 50 75 100 125 150 175

VGS = 10 V

ID , Drain Current [A]

3000

C

iss

2000

C

oss

1000

Capacitance [pF]

C

rss

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

gd

C

= C

rss

gd

VGS = 20 V

@ Note : TJ = 25 oC

@ Notes :

= 0 V

1. V

GS

2. f = 1 MHz

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

2

10

1

10

175 oC

, Reverse Drain Current [A]

DR

I

25 oC

0

10

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8

@ Notes :

1. V

= 0 V

GS

2. 250 µs Pulse Test

VSD , Source-Drain Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

V

= 20 V

10

5

V

DS

VDS = 80 V

DS

= 50 V

, Gate-Source Voltage [V]

GS

0

10

1

10

VDS , Drain-Source Voltage [V]

V

0

0 10 20 30 40 50 60 70 80

QG , Total Gate Charge [nC]

@ Notes : ID =40.0 A

IRF550A

Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature

1.2

1.1

3.0

2.5

2.0

POWER MOSFET

N-CHANNEL

1.0

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-75 -50 -25 0 25 50 75 100 125 150 175 200

@ Notes :

1. V

2. I

TJ , Junction Temperature [oC]

3

10

2

10

1

10

, Drain Current [A]

D

0

10

I

-1

10

0

10

Operation in This Area is Limited by R

DS(on)

@ Notes :

= 25 oC

1. T

C

2. T

= 175 oC

J

3. Single Pulse

1

10

1 ms

10 ms

DC

VDS , Drain-Source Voltage [V]

100

= 0 V

GS

= 250 µA

D

s

µ

10

10 µs

2

1.5

, (Normalized)

1.0

DS(on)

R

0.5

Drain-Source On-Resistance

0.0

-75 -50 -25 0 25 50 75 100 125 150 175 200

@ Notes :

1. V

2. I

TJ , Junction Temperature [oC]

Fig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating Area

50

40

30

20

, Drain Current [A]

D

I

10

0

25 50 75 100 125 150 175

Tc , Case Temperature [oC]

= 10 V

GS

= 20.0 A

D

0

10

D=0.5

0.2

-1

0.1

10

0.05

0.02

0.01

(t) , Thermal Response

JC

-2

θ

10

Z

-5

10

single pulse

-4

10

t1 , Square Wave Pulse Duration [sec]

Fig 11. Thermal Response

@ Notes :

1. Z

2. Duty Factor, D=t

3. TJM-TC=PDM*Z

P

DM

-3

10

-2

10

-1

10

(t)=0.9 oC/W Max.

JC

θ

JC

θ

t

1

t

2

0

10

(t)

1/t2

1

10

N-CHANNEL

POWER MOSFET

IRF550A

Fig 12. Gate Charge Test Circuit & Waveform

10V

“ Current Regulator

200nF12V

3mA

Current Sampling (IG)

V

R

G

50K

”

Same Type

Ω

300nF

V

GS

as DUT

V

GS

Q

10V

V

DS

Q

gs

g

Q

gd

DUT

R

1

Resistor

Fig 13. Resistive Switching Test Circuit & Waveforms

V

out

in

DUT

R

2

Current Sampling (ID)

Resistor

R

L

V

DD

( 0.5 rated V

Charge

V

out

90%

)

DS

10%

V

in

t

d(on)tr

t

on

t

d(off)

t

f

t

off

Vary tp to obtain required peak I

10V

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

BV

L

DUT

L

BV

I

D

C

V

DD

DSS

I

AS

V

DD

V

DS

D

R

G

t

p

E

= LL I

AS

----

1 2

2

AS

(t)

I

D

t

p

DSS

-------------------BV

-- V

DSS

DD

Time

V

(t)

DS

IRF550A

N-CHANNEL

POWER MOSFET

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

VV

V

GS

( Driver )

DUT

+

V

DS

--

I

S

L

V

GS

Driver

R

G

D =

Same Type

as DUT

• dv/dt controlled by “RG”

• I

controlled by Duty Factor “D”

S

Gate Pulse Width

-------------------------Gate Pulse Period

V

DD

10V

I

S

( DUT )

V

DS

( DUT )

IFM , Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

f

Body Diode

Forward Voltage Drop

di/dt

V

DD

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2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.