Page 1
IRF540
IRF540FI
N - CHANNEL100V - 00.50Ω - 30A - TO-220/TO-220FI
POWER MOSFET
TYPE V
IRF540
IRF 540FI
■ TYPICALR
■ AVALANCHERUGGEDTECHNOLOGY
■ 100% AVALANCHETESTED
■ REPETITIVEAVALANCHE DATA AT 100
■ LOW GATE CHARGE
■ HIGH CURRENTCAPABILITY
o
■ 175
■ APPLICATIONORIENTED
COPERATINGTEMPERATURE
DS(on)
DSS
100 V
100 V
=0.050 Ω
R
DS(on)
<0.077Ω
<0.077Ω
I
D
30 A
16 A
o
C
CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ SOLENOIDANDRELAY DRIVERS
■ DC-DC& DC-AC CONVERTER
■ AUTOMOTIVE ENVIRONMENT(INJECTION,
ABS, AIR-BAG,LAMP DRIVERS Etc.)
3
2
1
TO-220 TO-220FI
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
IRF530 IRF530FI
V
V
V
I
DM
P
Viso Ins ulation Withst a nd Voltage (DC) - 2000 V
T
(•) Pulsewidth limitedby safe operatingarea (1)ISD≤
April 1998
Drain-source Voltage (VGS=0) 100 V
DS
Drain- gate Voltage ( RGS=20kΩ)
DGR
Gat e- source Voltage ± 20 V
GS
Drain Current (cont in uous) at Tc=25oC3017A
I
D
Drain Current (cont in uous) at Tc=100oC2112A
I
D
100 V
(•) Drain Current (pulsed ) 120 120 A
Tot al Dissipat i on at Tc=25oC15045W
tot
Derating Factor 1 0.3 W/
Sto rage T emperatur e -65 to 175
stg
Max. Operat in g Junct io n Temper ature 175
T
j
30
Α, di/dt ≤ 200 A/µs, VDD≤ V
(BR)DSS
,Tj≤T
JMAX
o
C
o
C
o
C
1/6
Page 2
IRF540/IRF540FI
THERMAL DATA
TO-220 TO 220-FI
R
thj-case
R
thj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Va lu e Unit
I
AR
E
Ther mal Resist ance Junction- ca s e Max 1 3.33
Ther mal Resist ance Junction- ambient Max
Ther mal Resist ance Case-sink Typ
Maximum Lead Te m per a t ure F or Soldering Pur p os e
l
Avalanche Current , Repet it i ve or Not - Re petitive
(pulse w idth limited b y T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=25V)
j
max
j
62.5
0.5
300
30 A
200 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
=250µAVGS=0
I
D
100 V
Breakdown Volt age
I
DSS
I
GSS
Zer o Gate Volt age
Drain Curre nt (V
GS
Gat e-body Leakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
= ± 20 V
V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
234V
Voltage
R
DS(on)
Stati c Drain-so urce On
VGS=10V ID= 15 A 0.05 0. 077 Ω
Resistance
I
D(on)
On State Drain Cur rent VDS>I
D(on)xRDS(on)max
30 A
VGS=10V
DYNAMIC
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansconductance
C
C
C
Input Capacit an c e
iss
Out put Capa citance
oss
Reverse Transfer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=15A 10 20 S
VDS=25V f=1MHz VGS= 0 2600
350
85
3600
500
120
µA
µA
pF
pF
pF
2/6
Page 3
IRF540/IRF540FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
t
d(on)
Turn-on Time
r
Rise Time
t
VDD=50V ID=15A
=4.7 Ω VGS=10V
R
G
20
60
28
85
ns
ns
Q
Q
Q
Total Gate Charge
g
Gat e-Sourc e Charge
gs
Gate-Drain Charge
gd
VDD=80 V ID=30 A VGS=10V 80
13
28
110 nC
SWITCHINGOFF
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
t
r(Voff)
t
t
Of f - voltage Rise Time
Fall Time
f
Cross-over Tim e
c
VDD=80V ID=30 A
=4.7 Ω VGS=10V
R
G
22
25
55
30
35
75
SOURCE DRAIN DIODE
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle 1.5 %
(•) Pulse widthlimited by safe operating area
Source-drain Current
(•)
Source-drain Current
30
120
(pulsed)
(∗) For ward O n Vo lt age ISD=50A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
=30 A di/dt = 100 A/µs
I
SD
=30V Tj=150oC
V
DD
175
1.1
Charge
Reverse Recovery
12.5
Current
nC
nC
ns
ns
ns
A
A
ns
µC
A
3/6
Page 4
IRF540/IRF540FI
TO-220 MECHANICALDATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
E
A
L4
D
F2
F1
G1
H2
G
F
C
D1
L2
Dia.
L5
L7
L6
L9
P011C
4/6
Page 5
ISOWATT220MECHANICAL DATA
IRF540/IRF540FI
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
E
A
D
B
L3
L6
L7
¯
F1
F
G1
H
G
F2
123
L2
L4
P011G
5/6
Page 6
IRF540/IRF540FI
Information furnished is believed tobeaccurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents orother rightsof third parties which may results from its use. No
license is granted by implication or otherwiseunder any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in thispublication are subjectto change without notice.This publicationsupersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorizedfor useas criticalcomponentsin life support devicesor systems without express
written approval ofSGS-THOMSON Microelectonics.
1998 SGS-THOMSONMicroelectronics - Printed in Italy -All Rights Reserved
Australia - Brazil - Canada - China - France - Germany- Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
6/6
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