IRF530FP
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE V
DSS
R
DS(on)
I
D
IRF530FP 100 V < 0.16 Ω 10 A
■ TYPICAL R
■ 100% AVALANCHE TESTED
■ REPETITIVE AVA LANCHE DATA AT 100
■ LOW GATE CHARGE
■ AVALANCHE RUGGED TECHNOLOGY
■ APPLICATION ORIENT ED
DS(on)
= 0.12 Ω
o
C
CHARACTERIZATION
■ HIGH CURRENT CAPABILITY
o
■ 175
C OPERATING TEMPERATURE
APPLICATIONS
■ HIGH CURRENT, HIGH SPE ED SWI TCHING
■ SOLENOID AND RELAY DRIV ER S
■ DC-DC & DC-AC CONVE RTE R
■ AUTOMO T IVE ENV RO NM E NT (I NJE CT ION,
ABS, AIR-BAG, LAMP DRIVERS, Etc)
3
2
1
TO-220FP
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
V
T
(•) Pulse width limited by safe operating area
March 1998
Drain-source Voltage (VGS = 0) 100 V
DS
DGR
GS
I
D
I
D
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage ± 20 V
Drain Current (continuous) at Tc = 25 oC 10 A
Drain Current (continuous) at Tc = 100 oC7A
100 V
(•) Drain Current (pulsed) 64 A
Total Dissipation at Tc = 25 oC35W
tot
Derating Factor 0.23 W/
Insulation Withstand Voltage (DC) 2000 V
ISO
Storage Temperature -65 to 175
stg
T
Max. Operating Junction Temperature 175
j
o
C
o
C
o
C
1/5
IRF530FP
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-si n k
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
ma x, δ < 1%)
j
DD
= 25 V)
4.28
62.5
0.5
300
16 A
85 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
600 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
V
= ± 20 V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
234V
Voltage
R
DS(on)
Static Drain-source On
VGS = 10V ID = 8 A 0.12 0.16 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
10 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗) Forward
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
ReverseTransfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 8 A 5 8 S
= 0 950
GS
150
50
1300
270
70
µA
µA
pF
pF
pF
2/5
IRF530FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING O N
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
SWITCHING O F F
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
SOURCE DRAIN DIO DE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Turn-on Time
Rise Time
t
r
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
Off-voltage Rise Time
Fall Time
t
f
Cross-over Time
c
Source-drain Current
(•)
Source-drain Current
VDD = 50 V I
RG = 4.7 Ω VGS = 10 V
VDD = 80 V ID = 16 A V
V
= 80 V ID = 16 A
DD
= 4.7 Ω VGS = 10 V
R
G
=8A
D
= 10 V 32
GS
12
20
9
13
11
12
25
16
28
44 nC
15
17
35
16
64
(pulsed)
(∗) Forward On Voltage ISD = 16 A VGS = 0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
I
=16 A di/dt = 100 A/µs
SD
V
= 30 V Tj = 150 oC
DD
150
0.8
Charge
Reverse Recovery
10
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
3/5
IRF530FP
TO-220FP MECHANICAL DAT A
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
A
B
H
E
D
L3
L6
L7
¯
F1
F
G1
G
F2
123
L2
L4
4/5
IRF530FP
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronic s. Specificati ons mentioned
in this publication are subject to change without not ice. This publicat ion supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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. . .
5/5
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