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PD - 91386C
IRF5305S/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRF5305S)
l Low-profile through-hole (IRF5305L)
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
2
Pak is a surface mount power package capable of
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF5305L) is available for lowprofile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -31
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -22 A
I
DM
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 110 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.8 V/ns
T
J
T
STG
Pulsed Drain Current -110
Linear Derating Factor 0.71 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 280 mJ
Avalanche Current -16 A
Repetitive Avalanche Energy 11 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 1.4
Junction-to-Ambient ( PCB Mounted,steady-state)** –– – 40
2
D Pak
D
V
R
DS(on)
DSS
= -55V
= 0.06Ω
ID = -31A
S
TO-262
°C/W
°C
4/1/99
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IRF5305S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.034 –– – V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.06 Ω VGS = -10V, ID = -16A
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 8.0 ––– ––– S VDS = -25V, ID = -16A
Drain-to-Source Leakage Current
––– ––– -25
––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = -55V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 63 ID = -16A
Gate-to-Source Charge ––– ––– 13 nC VDS = -44V
Gate-to-Drain ("Miller") Charge ––– ––– 29 VGS = -10V, See Fig. 6 and 13
Turn-On Delay Time ––– 14 ––– VDD = -28V
Rise Time ––– 66 ––– ID = -16A
Turn-Off Delay Time ––– 39 ––– RG = 6.8Ω
ns
Fall Time ––– 63 ––– RD = 1.6Ω, See Fig. 10
Internal Source Inductance
––– –––
7.5
Between lead,
nH
and center of die contact
Input Capacitance ––– 1200 ––– VGS = 0V
Output Capacitance ––– 520 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 250 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
-31
-110
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– -1.3 V TJ = 25°C, IS = -16A, VGS = 0V
Reverse Recovery Time ––– 71 110 n s TJ = 25°C, IF = -16A
Reverse Recovery Charge ––– 170 250 nC di/dt = -100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
V
= -25V, Starting TJ = 25°C, L = 2.1mH
DD
RG = 25Ω, I
I
≤ -16A, di/dt ≤ -280A/µs, V
SD
= -16A. (See Figure 12)
AS
DD
≤ V
(BR)DSS
Uses IRF5305 data and test conditions
,
TJ ≤ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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D
S
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IRF5305S/L
A
A
)
A
)
A
1000
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
100
10
D
-I , Drain -to-S ou rce C urre nt (A )
-4.5V
20µs PULSE WIDTH
TJ = 25°C
T = 25 °C
1
0.1 1 10 100
-V , Drain-to-S ource Voltage (V)
DS
c
Fig 1. Typical Output Characteristics
100
1000
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
100
10
D
-I , Drain -to-S ou rce C urren t (A )
-4.5 V
20µs PULSE W IDTH
TJ = 175°C
T = 175°C
1
0.1 1 10 10 0
-V , Dra in-t o- S o u rc e Voltage (V
DS
C
Fig 2. Typical Output Characteristics
2.0
I = - 2 7 A
D
T = 25°C
10
J
T = 175°C
J
1.5
1.0
(Norm alized)
0.5
D
-I , D rain- to-S ou rc e C u rre nt (A )
1
45678910
-V , Gate -to-S ou rce V oltage (V
GS
V = -25 V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
DS(on)
R , Dra in -to -S o u rc e On R e s is tan c e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , J unc tion T empe rature ( °C )
J
Fig 4. Normalized On-Resistance
V = -1 0V
GS
Vs. Temperature
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IRF5305S/L
A
g
g
g
)
)
A
A
)
A
g
)
2500
2000
1500
1000
C, C apac itance (pF )
500
0
1 10 100
V = 0V, f = 1M Hz
GS
C = C + C , C S H O RTE D
iss
C = C
C = C + C
C
iss
C
oss
C
rss
-V , Drai n-to - S o ur c e V o ltage (V
DS
s gd d s
d
rss
oss ds
d
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
20
I = - 1 6A
-V , Gate -to -S o u rc e Volta ge (V )
16
12
GS
D
8
4
V = -4 4V
DS
V = -2 8V
DS
FOR TEST CIRCUIT
0
0 102030405060
Q , T ota l G a te C h arge (nC
G
SE E F IG U RE 1 3
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OP ER A T IO N IN T H IS A R E A L IMITED
BY R
DS(on)
100
100
T = 175°C
J
T = 25°C
SD
-I , Rev ers e D ra in C urre nt (A )
10
0.4 0.8 1.2 1.6 2.0
-V , Sou rc e - to -Drain V o ltage (V
SD
J
V = 0 V
Fig 7. Typical Source-Drain Diode
GS
10
D
-I , Drain C urren t (A )
T = 25 °C
C
T = 17 5 °C
J
Sin
le Pulse
1
1 10 100
-V , Drai n-to - S o ur c e Voltage (V
DS
Fig 8. Maximum Safe Operating Area
100µs
1ms
10ms
Forward Voltage
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IRF5305S/L
R
D.U.T.
D
-
+
V
DD
V
DS
35
30
V
GS
R
G
25
20
15
D
10
-I , Drain Current (A)
5
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
thJC
1
D = 0.50
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
0.20
0.10
0.05
0.1
0.02
Thermal Response (Z )
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJC C
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF5305S/L
(BR)
A
)
L
D.U.T
I
AS
0.01
t
p
DRIVER
Ω
15V
V
DD
R
-20V
V
DS
G
Fig 12a. Unclamped Inductive Test Circuit
I
AS
t
p
V
DSS
700
I
D
TO P -6.6 A
600
A
500
400
300
200
100
AS
V = -2 5V
E , S ing le Puls e A va lan c h e E n erg y ( mJ)
DD
0
25 50 75 100 125 150 175
Starting T , Junction Temperature (°C
J
-11A
BOT TOM -16 A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
-10V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
12V
V
GS
Fig 13b. Gate Charge Test Circuit
50KΩ
.2µF
.3µF
-3mA
Current Sampling Resistors
V
DS
+
D.U.T .
I
G
I
D
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IRF5305S/L
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
-
R
G
V
GS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• ISD controlled by Duty Factor "D"
+
G
• D.U.T. - Device Under Test
P.W.
D =
Period
+
V
DD
-
VGS=10V
[ ] ***
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
[ ]
I
[ ]
SD
Fig 14. For P-Channel HEXFETS
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IRF5305S/L
A
D2Pak Package Outline
10.54 (.415)
1.40 (.055)
MAX.
1.78 (.070)
1.27 (.050)
1.40 (.055)
3X
1.14 (.045)
5.08 (.200)
NOTE S:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
10.29 (.405)
- A 2
1 3
15.49 (.610)
14.73 (.580)
0.93 (.037)
3X
0.69 (.027)
0.2 5 ( .0 10) M B A M
Part Marking Information
D2Pak
4.69 (.185)
4.20 (.165)
5.28 (.208)
4.78 (.188)
0.55 (.022)
0.46 (.018)
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
LEAD ASSIGNMENTS
1 - G ATE
2 - D RAIN
3 - S OU R CE
10.16 (.400)
REF.
6.47 (.255)
6.18 (.243)
2.61 (.103)
2.32 (.091)
8.89 (.350)
REF.
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
2.54 (.100)
2X
INTERNATIONAL
RE CTIFIE R
LO G O
A S SEMBLY
LO T CO D E
F530S
9246
9 B 1 M
PART NUM B ER
DATE CODE
(YYW W )
YY = YEAR
WW = WEEK
8 www.irf.com
Page 9
Package Outline
TO-262 Outline
IRF5305S/L
Part Marking Information
TO-262
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Page 10
IRF5305S/L
Tape & Reel Information
D2Pak
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
1.60 (.063)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
FEED D IRECTION
1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
NOTES :
1. COM FO R M S TO E IA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HU B.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
11.60 (.457)
11.40 (.449)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
15.42 (.609)
15.22 (.601)
27.40 (1.079)
23.90 (.941)
4
26.4 0 (1.039)
24.40 (.961 )
3
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX .
4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 4/99
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