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Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Lead-Free
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
PD - 94788
IRF5305PbF
HEXFET® Power MOSFET
D
S
V
R
DS(on)
TO-220AB
= -55V
DSS
= 0.06Ω
ID = -31A
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -31
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -22 A
I
DM
PD @TC = 25°C Power Dissipation 110 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
T
STG
Pulsed Drain Current -110
Linear Derating Factor 0.71 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 280 mJ
Avalanche Current -16 A
Repetitive Avalanche Energy 11 m J
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 1.4
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
°C
10/31/03
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IRF5305PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.034 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.06 Ω VGS = -10V, ID = -16A
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 8.0 ––– ––– S VDS = -25V, ID = -16A
Drain-to-Source Leakage Current
––– ––– -25
––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = -55V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 63 ID = -16A
Gate-to-Source Charge ––– ––– 13 nC VDS = -44V
Gate-to-Drain ("Miller") Charge ––– ––– 29 VGS = -10V, See Fig. 6 and 13
Turn-On Delay Time ––– 14 ––– VDD = -28V
Rise Time ––– 66 ––– ID = -16A
Turn-Off Delay Time ––– 39 ––– RG = 6.8Ω
ns
Fall Time ––– 63 ––– RD = 1.6Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1200 ––– VGS = 0V
Output Capacitance ––– 520 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 250 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
-31
-110
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– -1.3 V TJ = 25°C, IS = -16A, VGS = 0V
Reverse Recovery Time ––– 71 110 ns TJ = 25°C, IF = -16A
Reverse RecoveryCharge ––– 170 250 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
= -25V, starting TJ = 25°C, L = 2.1mH
DD
RG = 25Ω, I
= -16A. (See Figure 12)
AS
I
≤ -16A, di/dt ≤ -280A/µs, V
SD
DD
≤ V
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
(BR)DSS
,
2 www.irf.com
D
S
Page 3
IRF5305PbF
A
A
A
A
1000
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
100
10
D
-I , Drain-to-Source Current (A)
-4.5V
20µs PULSE WIDTH
T = 25°C
J
1
0.1 1 10 100
-V , Drain-to-Source Voltage (V)
DS
c
Fig 1. Typical Output Characteristics
100
1000
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
100
10
D
-I , Drain-to-Source Current (A)
-4.5V
20µs PULSE WIDTH
T = 175°C
J
1
0.1 1 10 100
-V , Drain-to-Source Voltage (V)
DS
C
Fig 2. Typical Output Characteristics
2.0
I = -27A
D
T = 25°C
J
T = 175°C
J
10
1.5
1.0
(Normalized)
0.5
D
-I , Drain-to-Source Current (A)
1
45678 910
-V , Gate-to-Source Voltage (V)
GS
V = -25V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
V = -10V
GS
Vs. Temperature
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IRF5305PbF
A
A
A
A
2500
2000
1500
1000
C, Capacitance (pF)
500
0
1 10 100
V = 0V, f = 1MHz
GS
C = C + C , C SHORTED
iss gs gd ds
C = C
rss gd
C = C + C
oss ds gd
C
iss
C
oss
C
rss
-V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
20
I = -16A
D
16
12
8
GS
4
-V , Gate-to-Source Voltage (V)
V = -44V
DS
V = -28V
DS
FOR TEST CIRCUIT
0
0 102030405060
Q , Total Gate Charge (nC)
G
SEE FIGURE 13
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
100
T = 175°C
J
T = 25°C
SD
-I , Reverse Drain Current (A)
10
0.4 0.8 1.2 1.6 2.0
-V , Source-to-Drain Voltage (V)
SD
J
V = 0V
Fig 7. Typical Source-Drain Diode
GS
10
D
-I , Drain Current (A)
T = 25°C
C
T = 175°C
J
Single Pulse
1
1 10 100
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
100µs
1ms
10ms
Forward Voltage
4 www.irf.com
Page 5
IRF5305PbF
R
D.U.T.
D
-
+
V
DD
V
G
-10V
DS
V
GS
35
30
25
20
R
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
D
10
-I , Drain Current (A)
5
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
Case Temperature
10
thJC
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
Thermal Response (Z )
0.01
0.01
0.00001 0. 0001 0.001 0.01 0.1
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJC C
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 6
IRF5305PbF
A
(BR)
A
L
15V
+
V
DD
D.U.T
I
AS
0.01
p
DRIVER
Ω
R
V
G
-20V
DS
t
Fig 12a. Unclamped Inductive Test Circuit
I
AS
t
p
V
DSS
700
I
TOP -6.6A
600
500
400
300
200
100
AS
V = -25V
E , Single Pulse Aval anche Energy (mJ)
DD
0
25 50 75 100 125 150 175
Starting T , Junction Temperature (°C)
J
-11A
BOTTOM -16A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
D
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
-10V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
12V
V
GS
Fig 13b. Gate Charge Test Circuit
50KΩ
.2µF
.3µF
-3mA
Current Sampling Resistors
V
DS
D.U.T.
I
G
+
I
D
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Page 7
IRF5305PbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
**
• dv/dt controlled by R
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS*
R
G
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
-
D =
G
P. W .
Period
+
VGS=10V
[ ] ***
+
*
V
DD
-
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
[ ]
I
[ ]
SD
Fig 14. For P-Channel HEXFETS
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Page 8
IRF5305PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
10.54 (.415)
10.29 (.405)
1 2 3
4
6.47 (.255)
6.10 (.240)
1.15 (.045)
MIN
4.06 (.160)
3.55 (.140)
3.78 (.149)
3.54 (.139)
- A -
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
LEAD ASSIGNMENTS
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
IGBTs, CoPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
0.93 (.037)
3X
1.40 (.055 )
3X
1.15 (.045 )
2.54 (.100)
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
2X
0.69 (.027)
0.36 (.014) M B A M
0.55 (.022)
3X
0.46 (.018)
2.92 (.115)
2.64 (.104)
TO-220AB Part Marking Information
EXAMPLE:
THIS IS AN IRF1010
LOT CODE 1789
ASSEMBLED ON WW 19, 1997
IN TH E ASSEMBLY LINE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INTERN ATION AL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
Data and specifications subject to change without notice.
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/03
8 www.irf.com
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