Page 1
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
PD - 91385B
IRF5305
HEXFET® Power MOSFET
D
S
V
R
DS(on)
TO-220AB
= -55V
DSS
= 0.06Ω
ID = -31A
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -31
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -22 A
I
DM
PD @TC = 25°C Power Dissipation 110 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
T
STG
Pulsed Drain Current -110
Linear Derating Factor 0.71 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 280 mJ
Avalanche Current -16 A
Repetitive Avalanche Energy 11 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 1.4
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
°C
3/3/00
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IRF5305
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -55 ––– –– – V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.034 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.06 Ω VGS = -10V, ID = -16A
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 8.0 ––– ––– S VDS = -25V, ID = -16A
Drain-to-Source Leakage Current
––– ––– -25
––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = -55V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 63 ID = -16A
Gate-to-Source Charge ––– ––– 13 nC VDS = -44V
Gate-to-Drain ("Miller") Charge ––– ––– 29 VGS = -10V, See Fig. 6 and 13
Turn-On Delay Time ––– 14 ––– VDD = -28V
Rise Time ––– 66 ––– ID = -16A
Turn-Off Delay Time ––– 39 ––– RG = 6.8Ω
ns
Fall Time ––– 63 ––– RD = 1.6Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1200 ––– VGS = 0V
Output Capacitance ––– 520 – –– pF VDS = -25V
Reverse Transfer Capacitance –– – 250 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
-31
-110
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– -1.3 V TJ = 25°C, IS = -16A, VGS = 0V
Reverse Recovery Time ––– 71 110 ns TJ = 25°C, IF = -16A
Reverse RecoveryCharge ––– 170 250 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
= -25V, starting TJ = 25°C, L = 2.1mH
DD
RG = 25Ω, I
= -16A. (See Figure 12)
AS
I
≤ -16A, di/dt ≤ -280A/µs, V
SD
DD
≤ V
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
(BR)DSS
,
2 www.irf.com
D
S
Page 3
IRF5305
A
A
)
A
)
A
1000
VGS
TO P - 15 V
- 10V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
BOT TO M - 4.5V
100
10
D
-I , Dra in-to-Sou rc e Curre n t (A )
-4.5 V
20µs PULSE WIDTH
T = 2 5°C
J
1
0.1 1 10 100
-V , Drain-to-Source Voltage (V)
DS
c
Fig 1. Typical Output Characteristics
100
1000
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
100
10
D
-I , Drain -to-S ou rce C urren t (A )
-4.5 V
20µs PULSE W IDTH
T = 175°C
J
1
0.1 1 10 100
-V , Dra in- to -S o u rc e Vo ltage (V
DS
C
Fig 2. Typical Output Characteristics
2.0
I = -27 A
D
T = 25°C
10
J
T = 175°C
J
1.5
1.0
(N orma l i z ed)
0.5
D
-I , D rain- to-S ou rc e C u rre nt (A)
1
45678910
-V , Gate -to-S ou rce V oltage (V
GS
V = -25 V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
DS (on)
R , D ra in-to -S o u rc e O n R e s is ta nc e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
V = - 10 V
GS
Vs. Temperature
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IRF5305
A
g
g
g
)
)
A
A
)
A
g
)
2500
2000
1500
1000
C, C apac itance (pF )
500
0
1 10 100
V = 0V, f = 1M Hz
GS
C = C + C , C S H O RTE D
iss
C = C
C = C + C
C
iss
C
oss
C
rss
-V , Drai n-to - S o u rc e Voltage (V
DS
s gd d s
d
rss
oss ds
d
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
20
I = -1 6A
-V , G a te -to -S o u rc e V o ltag e (V )
16
12
GS
D
8
4
V = -4 4 V
DS
V = -2 8 V
DS
FOR TEST CIRCUIT
0
0 102030405060
Q , To ta l Gate Ch a rge (nC
G
SE E F IG U RE 1 3
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OP ER A T IO N IN T H IS A R E A L IMITED
BY R
DS(on)
100
100
T = 175°C
J
T = 25°C
SD
-I , Rev ers e D ra in C urre nt (A )
10
0.4 0.8 1.2 1.6 2.0
-V , So urce-to -Dra in V o ltage (V
SD
J
V = 0V
Fig 7. Typical Source-Drain Diode
GS
10
D
-I , Drain C urren t (A )
T = 25 °C
C
T = 17 5 °C
J
Sin
le Pul s e
1
1 10 100
-V , Dra in- to -S o u rc e Voltage (V
DS
Fig 8. Maximum Safe Operating Area
100µs
1ms
10ms
Forward Voltage
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Page 5
IRF5305
R
D.U.T.
D
-
+
V
DD
V
G
-10V
DS
V
GS
35
30
25
20
R
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
D
10
-I , Drain Current (A)
5
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
Case Temperature
10
thJC
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
Thermal Response (Z )
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJC C
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF5305
A
)
(BR)
A
L
15V
+
V
DD
D.U.T
I
AS
0.01
p
DRIVER
Ω
R
V
G
-20V
DS
t
Fig 12a. Unclamped Inductive Test Circuit
I
AS
t
p
V
DSS
700
I
TO P -6.6A
600
500
400
300
200
100
AS
V = -2 5V
E , S ingle Pu lse A valanc he E n ergy (m J)
DD
0
25 50 75 100 125 150 175
Starting T , Junction Temperature (°C
J
-11 A
BOTTOM -16A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
D
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
-10V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
12V
V
GS
Fig 13b. Gate Charge Test Circuit
50KΩ
.2µF
.3µF
-3mA
Current Sampling Resistors
V
DS
D.U.T .
I
G
+
I
D
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Page 7
IRF5305
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
**
• dv/dt controlled by R
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS*
R
G
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
-
D =
G
P.W.
Period
+
VGS=10V
[ ] ***
+
*
V
DD
-
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
[ ]
I
[ ]
SD
Fig 14. For P-Channel HEXFETS
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IRF5305
A
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
10.29 (.405)
1 2 3
6.47 (.255)
6.10 (.240)
4
1.15 (.045)
M IN
4.06 (.160)
3.55 (.140)
3.78 (.149)
3.54 (.139)
- A -
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
LEAD ASSIGNMENTS
1 - GAT E
2 - DRA IN
3 - SOU RC E
4 - DRA IN
1.40 (.055)
3X
1.15 (.045)
2.54 (.100)
NOTES:
1 DIM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 . 5 M , 1 9 82 . 3 OU T L IN E C O N F O R M S T O JE D E C O U T L IN E T O -2 20 A B .
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
2X
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
W ITH ASSEMB LY
LOT C OD E 9 B1 M
0.93 (.037)
3X
0.69 (.027)
0.36 (.01 4) M B A M
INTERNATIONAL
RE CTI F IER
LO GO
ASSEMBLY
LO T CODE
IRF1010
9246
9B 1M
0.55 (.022)
3X
0.46 (.018)
2.92 (.115)
2.64 (.104)
PART NUMBER
DATE CODE
(YYW W)
YY = YEAR
WW = WEEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 221 8371
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 4/99
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