Page 1
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
PD - 91434A
IRF5210
HEXFET® Power MOSFET
D
S
V
R
DS(on)
TO-220AB
= -100V
DSS
= 0.06Ω
ID = -40A
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -40
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -29 A
I
DM
PD @TC = 25°C Power Dissipation 200 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
T
STG
Pulsed Drain Current -140
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 780 mJ
Avalanche Current -21 A
Repetitive Avalanche Energy 20 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.75
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
°C
5/13/98
Page 2
IRF5210
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.06 Ω VGS = -10V, ID = -24A
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 10 ––– ––– S VDS = -50V, ID = -21A
Drain-to-Source Leakage Current
––– ––– -25
––– ––– -250 VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = -100V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 180 ID = -21A
Gate-to-Source Charge ––– ––– 25 nC VDS = -80V
Gate-to-Drain ("Miller") Charge ––– ––– 97 VGS = -10V, See Fig. 6 and 13
Turn-On Delay Time ––– 17 ––– VDD = -50V
Rise Time ––– 86 ––– ID = -21A
Turn-Off Delay Time ––– 79 ––– RG = 2.5Ω
ns
Fall Time ––– 81 ––– RD = 2.4Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 2700 ––– VGS = 0V
Output Capacitance ––– 790 –– – pF VDS = -25V
Reverse Transfer Capacitance ––– 450 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -21A, VGS = 0V
Reverse Recovery Time ––– 170 260 ns TJ = 25°C, IF = -21A
Reverse RecoveryCharge ––– 1.2 1.8 µC di/dt = -100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
SD
TJ ≤ 175°C
= -25V, starting TJ = 25°C, L = 3.5mH
= -21A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
-40
A
-140
≤ -21A, di/dt ≤ -480A/µs, V
showing the
p-n junction diode.
DD
≤ V
(BR)DSS
,
D
G
S
Page 3
IRF5210
A
A
)
A
A
1000
VGS
TO P - 15 V
- 10V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
BOT TOM - 4.5V
100
10
D
-I , Dra in-to-Source C u rren t (A )
-4.5 V
40µs PULSE WIDTH
T = 2 5°C
1
0.1 1 10 1 00
-V , Drain-to-Source Voltage (V)
DS
c
Fig 1. Typical Output Characteristics
1000
1000
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
100
10
D
-I , Drain -to-S ou rce C urre nt (A )
-4. 5V
40µs PULSE WIDTH
T = 175°C
1
0.1 1 10 100
-V , Dra in-t o-Sou rc e V o ltage (V
DS
C
Fig 2. Typical Output Characteristics
3.0
I = -35 A
D
100
10
D
-I , Drain-to-S ource C urrent (A )
1
45678910
-V , G a te -to-S ou rc e V o ltage (V)
GS
T = 25°C
J
T = 175°C
J
V = - 5 0V
DS
40µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(Norm alized)
1.0
0.5
DS(on)
R , D r ain -to- S ou r c e On R e si s tan c e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V = -1 0V
GS
Page 4
IRF5210
A
)
A
)
A
A
)
g
6000
5000
4000
3000
2000
C, Capacitance (pF)
1000
0
1 10 100
V = 0V, f = 1M H z
GS
C = C + C , C S H O RTE D
iss gs gd ds
C = C
rss gd
C = C + C
oss ds gd
C
iss
C
oss
C
rss
-V , Drain -to -Sou rc e Voltage (V
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
20
I = -2 1A
16
12
GS
D
8
4
V = - 80 V
DS
V = - 50 V
DS
V = - 20 V
DS
-V , G a te- to-Sour ce V o lta g e (V)
FOR TEST CIRCU IT
0
0 40 80 120 160 200
Q , To ta l Gate Cha rge (nC
G
SE E F IG U R E 13
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OP ERA T IO N IN T H IS A R E A L IMITE D
BY R
DS(on)
100
T = 175°C
J
T = 25°C
J
10
SD
-I , Rev ers e D ra in C urre nt (A )
1
0.4 0.8 1.2 1.6 2.0 2.4
-V , Sourc e-to-Drain Voltage (V )
SD
V = 0V
Fig 7. Typical Source-Drain Diode
Forward Voltage
GS
100
10
D
-I , Drain C u rren t (A )
T = 25 °C
C
T = 17 5 °C
J
le P ulse
Sin
1
1 10 100 1000
-V , Dra in- to -S o u rc e V o ltage (V
DS
10µs
100µs
1ms
10ms
Fig 8. Maximum Safe Operating Area
Page 5
IRF5210
R
D.U.T.
D
-
+
V
DD
V
50
R
40
DS
V
GS
G
-10V
30
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
D
-I , Drain Current (A)
10
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
Case Temperature
1
D = 0.50
thJC
0.20
0.1
0.10
P
1 2
DM
t
1
t
2
0.05
Thermal Response (Z )
0.02
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Page 6
IRF5210
(BR)
A
)
L
D.U.T
I
AS
0.01
t
p
DRIVER
Ω
15V
V
DD
R
-20V
V
DS
G
Fig 12a. Unclamped Inductive Test Circuit
I
AS
t
p
V
DSS
2000
I
TO P -8 .6A
D
-15 A
A
1600
1200
800
400
AS
E , S ingle Pu lse A valanc he E n ergy (m J)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature (°C
J
BOTTOM -21 A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Q
G
-10V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
V
GS
.3µF
D.U.T .
-3mA
I
G
Current Sampling Resistors
V
+
I
D
Fig 13b. Gate Charge Test Circuit
DS
Page 7
IRF5210
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
-
R
G
V
GS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• ISD controlled by Duty Factor "D"
+
G
• D.U.T. - Device Under Test
P.W.
D =
Period
+
V
DD
-
VGS=10V
[ ] ***
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
Current
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
di/dt
Diode Recovery
dv/dt
Fig 14. For P-Channel HEXFETS
V
DD
[ ]
I
[ ]
SD
Page 8
IRF5210
A
A
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
1.40 (.055)
3X
1.15 (.045)
2.54 (.100)
NOTES:
1 DIM EN S IO NIN G & T O LE R A N C I N G PE R A N S I Y 1 4.5 M , 19 82 . 3 O U TL IN E C O N FO R M S T O JE D E C OU T L IN E TO -2 2 0 AB .
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
2X
10.29 (.405)
4
1 2 3
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
EXAMPLE : THIS IS AN IRF1010
W ITH AS SE MBL Y
W ITH ASSEM BL Y
LO T COD E 9B 1 M
LO T COD E 9 B1 M
3.78 (.149)
3.54 (.139)
- A -
6.47 (.255)
6.10 (.240)
1.15 (.045)
M IN
4.06 (.160)
3.55 (.140)
0.93 (.037)
3X
0.69 (.027)
0.36 (.01 4) M B A M
INTERN A TION A L
INTERNATIONAL
RE CTIFIER
RE CT IFIE R
L OG O
LO GO
ASSEMBLY
ASSEMBLY
LO T C ODE
LO T C ODE
4.69 (.185)
4.20 (.165)
- B -
I RF1010
IRF1010
9246
9B 1 M
9B 1 M
1.32 (.052)
1.22 (.048)
LEAD ASSIGNMENTS
1 - G A T E
2 - D R A IN
3 - SO URC E
4 - D R A IN
0.55 (.022)
3X
0.46 (.018)
2.92 (.115)
2.64 (.104)
9246
PART NUMB ER
PART NUMBER
DATE CODE
DATE CODE
(YYWW)
(YYW W)
YY = YE AR
YY = YEAR
WW = WEEK
WW = WEEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 5/98
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