Datasheet IRF520NPBF Specification

 Advanced Process Technology
 Dynamic dv/dt Rating
 175°C Operating Temperature
 Fast Switching
 Fully Avalanche Rated

 Lead-Free

Description

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.

PD - 94818

IRF520NPbF

HEXFET® Power MOSFET

D

V

= 100V

DSS

G

R

S

TO-220AB

= 0.20Ω

DS(on)

ID = 9.7A

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.7
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.8 A
I

DM

PD @TC = 25°C Power Dissipation 48 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T

J

T

STG

Pulsed Drain Current  38

Linear Derating Factor 0.32 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 91 mJ
Avalanche Current 5.7 A
Repetitive Avalanche Energy 4.8 mJ

Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Junction-to-Case ––– 3.1
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62

°C

11/5/03

IRF520NPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.20 Ω VGS = 10V, ID = 5.7A 
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 2.7 ––– ––– S VDS = 50V, ID = 5.7A

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 100V, VGS = 0V

µA

nA

VGS = -20V
Total Gate Charge ––– ––– 25 ID = 5.7A
Gate-to-Source Charge ––– ––– 4.8 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 11 VGS = 10V, See Fig. 6 and 13 
Turn-On Delay Time ––– 4.5 ––– VDD = 50V
Rise Time ––– 23 ––– ID = 5.7A
Turn-Off Delay Time ––– 32 ––– RG = 22Ω

ns

Fall Time ––– 23 ––– RD = 8.6Ω, See Fig. 10 

4.5

Internal Drain Inductance

Internal Source Inductance ––– –––

––– –––

7.5

Between lead,

6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 330 ––– VGS = 0V
Output Capacitance ––– 92 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 54 ––– ƒ = 1.0MHz, See Fig. 5

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 V

DD

RG = 25Ω, I

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 5.7A, VGS = 0V 
Reverse Recovery Time ––– 99 150 ns TJ = 25°C, IF = 5.7A
Reverse RecoveryCharge ––– 390 580 nC di/dt = 100A/µs 

 I

SD

TJ ≤ 175°C

= 25V, starting TJ = 25°C, L = 4.7mH

= 5.7A. (See Figure 12)

AS

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

9.7
A

38

≤ 5.7A, di/dt ≤ 240A/µs, V

showing the

p-n junction diode.

DD

≤ V

(BR)DSS

,

D

G

S

IRF520NPbF

A

A

A

A

100

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTTO M 4.5V

10

D

I , Drain-to-Source Current (A)

4.5V

20µs PULSE WIDTH
T = 25°C

1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

C

Fig 1. Typical Output Characteristics

100

100

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTTOM 4.5V

10

4.5V

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH
T = 175°C

1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

C

Fig 2. Typical Output Characteristics

3.0

I = 9.5A

D

T = 25°C

J

T = 175°C

10

D

I , Drain-to-Source Current (A)

1

45678910

V , Gate-to-Source Voltage (V)

GS

J

V = 50V

DS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

2.5

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature (°C)

J

Fig 4. Normalized On-Resistance

Vs. Temperature

V = 10V

GS

IRF520NPbF

A

A

A

A

600

500

400

300

200

C, Capacitance (pF)

100

0

1 10 100

V = 0V, f = 1MHz

GS

C = C + C , C SHORTED

iss g s gd ds

C = C

rss gd

C = C + C

oss ds gd

C

iss

C

oss

C

rss

V , Drain-t o-Source Voltage (V)

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

20

I = 5.7A

D

16

12

8

4

GS

V , Gate-to-Source Voltage (V)

V = 80V

DS

V = 50V

DS

V = 20V

DS

FOR TEST CIRCUIT

0

0 5 10 15 20 25

Q , Total Gate Charge (nC)

G

SEE FIGURE 13

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED
BY R

DS(on)

T = 175°C

10

SD

I , Reverse Drain Current (A)

1

0.4 0.6 0.8 1.0 1.2 1.4

J

T = 25°C

J

V = 0V

V , Source-to-Drain Voltage (V)

SD

Fig 7. Typical Source-Drain Diode

Forward Voltage

GS

10µs

10

100µs

1ms

1

D

I , Drain Current (A)

T = 25°C

C

T = 175°C

J

Single Pulse

0.1
1 10 100 1000

V , Drain-to-Source Voltage (V)

DS

10ms

Fig 8. Maximum Safe Operating Area

10.0

8.0

6.0

IRF520NPbF

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

R

D.U.T.

D

+

V

DD

-

4.0

D

I , Drain Current (A)

2.0

0.0
25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

Case Temperature

10

D = 0.50

thJC

1

0.20

0.10

0.05

P

1 2

DM

t

1

t

2

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Thermal Response (Z )

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

0.01

0.00001 0.0001 0.001 0.01 0.1

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF520NPbF

A

D.U.T.

I

AS

L

0.01Ω

+

V

DD

-

R

10 V

V

DS

G

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

V

DD

V

DS

I

AS

Fig 12b. Unclamped Inductive Waveforms

200

160

120

80

40

AS

V = 25V

E , Single Pulse Avalanche Energy (mJ)

DD

0

25 50 75 100 125 150 175

Starting T , Junction Temperature (°C)

J

I
TOP 2.3A

4.0A
BOTTOM 5.7A

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

D

Q

G

10 V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

50KΩ

12V

.2µF

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

Fig 13b. Gate Charge Test Circuit

+

V

DS

-

D

IRF520NPbF

Peak Diode Recovery dv/dt Test Circuit

+





D.U.T

-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance
Current Transformer

-

-

• dv/dt controlled by R

• Driver same type as D.U.T.

G

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =

Period



P. W .

+

+

V

DD

-

VGS=10V

*

Reverse
Recovery
Current

Re-Applied
Voltage

D.U.T. ISDWaveform

Body Diode Forward

Current

D.U.T. VDSWaveform

Body Diode Forward Drop

Inductor Curent

Ripple ≤ 5%

* V

= 5V for Logic Level Devices

GS

Diode Recovery

dv/dt

Fig 14. For N-Channel HEXFETS

di/dt

V

DD

I

SD

IRF520NPbF

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

2.87 (. 113)

2.62 (. 103)

15.24 (.600)

14.84 (.584)

14.09 (. 555)

13.47 (. 530)

10.54 (.415)

10.29 (.405)

1 2 3

3.78 (.1 49)

3.54 (.1 39)

- A -

6.47 (.255)

6.10 (.240)

4

1.15 (.0 45)
MIN

4.06 ( .160)

3.55 ( .140)

4.69 (.1 85)

4.20 (.1 65)

- B -

1.32 (.052)

1.22 (.048)

HEXFET

1- GATE
2- DRAIN
3- S OURCE
4- DRAIN

LEAD ASSI GNMENTS

LEAD ASSIGNMENTS
1 - GAT E
2 - DRA IN
3 - SOU RCE
4 - DRA IN

IGBTs, C oPACK

1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR

0.93 (. 037)

3X

1.40 (.055)

3X

1.15 (.045)

2.54 (.1 00)

NOTES:

1 DIMENSION ING & TOLER ANC ING PER AN SI Y14.5M, 19 82. 3 OUTL INE CO NFO RMS TO JEDE C OUTLINE TO-2 20AB .
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

2X

0.69 (. 027)

0.36 (.014) M B A M

0.55 (. 022)

3X

0.46 (. 018)

2.92 (. 115)

2.64 (. 104)

TO-220AB Part Marking Information

EXAMPLE:

THIS IS AN IRF1010

LOT CODE 1789
ASSEMB LED O N WW 1 9, 1997
IN THE ASSE MBLY LINE "C"

Note: "P" in assembly line
position indicates "Lead-Free"

INTE RNATIO NAL

REC TIFIER

LOGO

ASSEMBLY
LOT CODE

Data and specifications subject to change without notice.

PART NUM BER

DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information.11/03

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/