Page 1
IRF520NS/L
HEXFET® Power MOSFET
PD -91340A
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF520NL) is available for low-profile applications.
S
D
G
Description
5/13/98
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 3.1
R
θJA
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40
Thermal Resistance
°C/W
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.7
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.8 A
I
DM
Pulsed Drain Current 38
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 91 mJ
I
AR
Avalanche Current 5.7 A
E
AR
Repetitive Avalanche Energy 4.8 m J
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
l Advanced Process Technology
l Surface Mount (IRF520NS)
l Low-profile through-hole (IRF520NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
2
D Pak
TO-262
V
DSS
= 100V
R
DS(on)
= 0.20Ω
ID = 9.7A
Page 2
IRF520NS/L
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.20 Ω VGS = 10V, ID = 5.7A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
g
fs
Forward Transconductance 2.7 ––– ––– S VDS = 25V, ID = 5.7A
––– ––– 25
µA
VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
VGS = -20V
Q
g
Total Gate Charge ––– ––– 25 ID = 5.7A
Q
gs
Gate-to-Source Charge ––– ––– 4.8 nC VDS = 80V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 11 VGS = 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 4.5 ––– VDD = 50V
t
r
Rise Time ––– 23 ––– ID = 5.7A
t
d(off)
Turn-Off Delay Time ––– 32 ––– RG = 22Ω
t
f
Fall Time ––– 23 ––– RD = 8.6Ω, See Fig. 10
Between lead,
––– –––
and center of die contact
C
iss
Input Capacitance ––– 3 30 ––– VGS = 0V
C
oss
Output Capacitance ––– 92 ––– pF VDS = 25V
C
rss
Reverse Transfer Capacitance ––– 54 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
nH
7.5
L
S
Internal Source Inductance
V
DD
= 25V, starting TJ = 25°C, L = 4.7mH
RG = 25Ω, I
AS
= 5.7A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
I
SD
≤ 5.7A, di/dt ≤ 240A/µs, V
DD
≤ V
(BR)DSS
,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRF520N data and test conditions
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 5.7A, VGS = 0V
t
rr
Reverse Recovery Time ––– 99 150 ns TJ = 25°C, IF = 5.7A
Q
rr
Reverse RecoveryCharge – –– 390 580 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
S
D
G
A
9.7
38
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Page 3
IRF520NS/L
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
1
10
100
0.1 1 10 100
I , D ra in-to - S o urc e C u r ren t (A)
D
V , Dra in-t o-So u rc e V o ltage (V
)
DS
V G S
TO P 1 5V
10 V
8. 0V
7. 0V
6. 0V
5. 5V
5. 0V
BOTTOM 4.5V
20µs PUL SE WIDTH
T = 25°C
C
A
4.5V
1
10
100
0.1 1 10 100
4.5V
I , Drain-to-Source Current (A)
D
V , Dra in-t o-So u rc e V o ltage (V
)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20µs PULSE WIDTH
T = 175°C
C
A
1
10
100
45678910
T = 25°C
J
GS
V , Gate -to-S o urce Vo ltag e (V)
D
I , Drain-to- So u rce C urre n t (A)
V = 50V
20µs PULSE WIDTH
DS
T = 175°C
J
A
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C )
R , D ra in-to -S o u rc e O n R e s is ta nc e
DS (on)
(N orma li z ed)
V = 10 V
GS
A
I = 9.5 A
D
Page 4
IRF520NS/L
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
100
200
300
400
500
600
1 10 100
C, Capacitance (pF)
DS
V , Drain -to -So urce Voltage (V
)
A
V = 0V, f = 1M Hz
C = C + C , C S H O RTE D
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 5 10 15 20 25
Q , Tota l Gate Ch a rge (nC
)
G
V , Gate -to- S ource V ol tag e (V )
GS
V = 80 V
V = 50 V
V = 20 V
DS
DS
DS
A
FOR TEST CIRCUIT
SE E F IG U RE 1 3
I = 5 . 7 A
D
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4
T = 25 °C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Re ve r se D r ain C u rre n t (A )
SD
SD
A
T = 175°C
J
0.1
1
10
100
1 10 100 1000
V , Dra in-t o-So u rc e V o ltage (V
)
DS
I , Drain C urrent (A)
O PERA T IO N IN T HIS A REA L I MI T ED
BY R
D
DS(on)
10µs
100µs
1ms
10ms
A
T = 25 °C
T = 17 5 °C
Sin
g
le Pulse
C
J
Page 5
IRF520NS/L
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
25 50 75 100 125 150 175
0.0
2.0
4.0
6.0
8.0
10.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
J DM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Page 6
IRF520NS/L
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
0
40
80
120
160
200
25 50 75 100 125 150 175
J
E , Sing le P u ls e A va lan c h e E ne rg y ( mJ)
AS
A
Starting T , Junction Temperature (°C
)
V = 25 V
I
TOP 2.3A
4.0 A
BOTTO M 5.7A
DD
D
Page 7
IRF520NS/L
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple ≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. ISDWaveform
D.U.T. VDSWaveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
Page 8
IRF520NS/L
D2Pak Package Outline
D2Pak
Part Marking Information
10.16 (.400)
REF.
6.47 (.255)
6.18 (.243)
2.61 (.103)
2.32 (.091)
8.89 (.350)
REF.
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
5.28 (.208)
4.78 (.188)
4.69 (.185)
4.20 (.165)
10.54 (.415)
10.29 (.405)
- A 2
1 3
15.49 (.610)
14.73 (.580)
3X
0.93 (.037)
0.69 (.027)
5.08 (.200)
3X
1.40 (.055)
1.14 (.045)
1.78 (.070)
1.27 (.050)
1.40 (.055)
MA X.
NOTE S:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
0.55 (.022)
0.46 (.018)
0.2 5 ( .0 10) M B A M
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
LEAD ASSIGNMENTS
1 - G ATE
2 - D RAIN
3 - S OU R CE
2.54 (.100)
2X
PART NUM B ER
INTERNATIONAL
RE CTIFIER
LO GO
DATE CODE
(YYW W)
YY = YEAR
WW = WEEK
A S SEMBLY
LO T CO D E
F530S
9 B 1 M
9246
A
Page 9
IRF520NS/L
Package Outline
TO-262 Outline
TO-262
Part Marking Information
Page 10
IRF520NS/L
Tape & Reel Information
D2Pak
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 5/98
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
M IN .
30.40 (1.197)
MAX .
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMF O R M S T O EIA-418.
2. CO N TR O L L IN G D IMENS IO N : M ILLIMET ER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
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